Philips Semiconductors
Product specification
NPN microwave power transistor
FEATURES
•
Diffused emitter ballasting resistors
•
Self-aligned process entirely ion implanted and gold
sandwich metallization
•
optimum temperature profile
•
excellent performance and reliability
•
Input matching cell improves input impedance and
facilitates the design of wideband circuits.
olumns
LTE21009R
PINNING - SOT440A
PIN
1
2
3
collector
base
emitter connected to flange
DESCRIPTION
1
c
APPLICATIONS
•
Common emitter class-A linear power amplifiers up
to 4.2 GHz.
3
b
e
MAM131
DESCRIPTION
NPN silicon planar epitaxial microwave power transistor in
a SOT440A metal ceramic flange package with the emitter
connected to the flange.
2
Top view
Marking code:
435
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA
Microwave performance up to T
mb
= 25
°C
in a common emitter class-A amplifier.
MODE OF OPERATION
Class-A
f
(GHz)
2.1
V
CE
(V)
16
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
I
C
(mA)
150
P
L1
(W)
≥0.6
G
po
(dB)
≥10
1997 Feb 19
2
Philips Semiconductors
Product specification
NPN microwave power transistor
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
CBO
V
CER
V
CEO
V
EBO
I
C
P
tot
T
stg
T
j
T
sld
PARAMETER
collector-base voltage
collector-emitter voltage
collector-emitter voltage
emitter-base voltage
DC collector current (DC)
total power dissipation
storage temperature
operating junction temperature
soldering temperature
up to 0.3 mm from case;
t
≤
10 s
T
mb
≤
75
°C
CONDITIONS
open emitter
R
BE
= 100
Ω
open base
open collector
−
−
−
−
−
−
−65
−
−
MIN.
LTE21009R
MAX.
40
35
16
3
250
4
+200
200
235
V
V
V
V
UNIT
mA
W
°C
°C
°C
10
3
handbook, halfpage
IC
(mA)
(3)
MBH902
handbook, halfpage
5
MGD966
Ptot
(W)
4
10
2
3
(1)
(2)
2
10
VCEO
1
1
10
15
20
25
30
35
VCE (V)
T
mb
= 75
°C.
(1) Region of permissible DC operation.
(2) Permissible extension provided R
BE
< 100
Ω.
(3) Second breakdown limit (independent of temperature).
0
−50
0
50
100
150
200
Tmb (°C)
Fig.3
Fig.2 DC SOAR.
Power dissipation derating as a function of
mounting-base temperature.
1997 Feb 19
3
Philips Semiconductors
Product specification
NPN microwave power transistor
THERMAL CHARACTERISTICS
SYMBOL
R
th j-mb
R
th mb-h
Note
1. See “Mounting
recommendations in the General part of handbook SC19a”.
CHARACTERISTICS
T
mb
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
I
EBO
h
FE
PARAMETER
collector cut-off current
emitter cut-off current
DC current gain
CONDITIONS
V
CB
= 20 V; I
E
= 0
V
CB
= 40 V; I
E
= 0
V
EB
= 1.5 V; I
C
= 0
V
CE
= 5 V; I
C
= 150 mA
−
−
−
15
MIN.
PARAMETER
thermal resistance from junction to mounting base
thermal resistance from mounting base to heatsink
CONDITIONS
T
mb
= 25
°C
note 1
LTE21009R
MAX.
36
0.7
UNIT
K/W
K/W
MAX.
50
0.4
200
150
UNIT
µA
mA
nA
1997 Feb 19
4
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