• Underwriters Laboratory Recognition under UL standard
for safety 497B: Isolated Loop Circuit Protection
• Glass passivated junction
• 1500W peak pulse power capabililty on 10/1000µs
waveform, repetition rate (duty cycle): 0.05%
• Excellent clamping capability
• Low incremental surge resistance
• Very fast response time
• Includes 1N6267 thru 1N6303A
0.375 (9.5)
0.285 (7.2)
Mechanical Data
Case:
Molded plastic body over passivated junction
Terminals:
Plated axial leads, solderable per
MIL-STD-750, Method 2026
High temperature soldering guaranteed: 265°C/10 seconds,
0.375" (9.5mm) lead length, 5lbs. (2.3 kg) tension
Polarity:
For unidirectional types the color band denotes
the cathode, which is positive with respect to the anode
under normal TVS operation
Mounting Position:
Any
Weight:
0.045 oz., 1.2 g
Flammability:
Epoxy is rated UL 94V-0
Packaging Codes – Options (Antistatic):
51 – 1K per Bulk box, 10K/carton
54 – 1.4K per 13" paper Reel
(52mm horiz. tape), 4.2K/carton
73 – 1K per horiz. tape & Ammo box, 10K/carton
Dimensions in inches
and (millimeters)
1.0 (25.4)
MIN.
0.042 (1.07)
0.038 (0.96)
DIA.
Devices for Bidirectional Applications
For bi-directional, use C or CA suffix for types 1.5KE6.8 thru types 1.5KE440
(e.g. 1.5KE6.8C, 1.5KE440CA). Electrical characteristics apply in both directions.
Maximum Ratings and Characteristics
Parameter
(T
A
= 25°C unless otherwise noted)
Symbol
P
PPM
I
PPM
P
M(AV)
I
FSM
V
F
R
θJL
R
θJA
T
J
, T
STG
Limit
1500
See Next Table
6.5
200
3.5/5.0
20
75
–55 to +175
Unit
W
A
W
A
V
°C/W
°C/W
O
Peak power dissipation with a 10/1000µs waveform
(1)
(Fig. 1)
Peak pulse current wih a 10/1000µs waveform
(1)
Steady state power dissipation
at T
L
= 75
O
C, lead lengths 0.375” (9.5mm)
(2)
Peak forward surge current, 8.3ms
single half sine-wave unidirectional only
(3)
Maximum instantaneous forward voltage
at 100A for unidirectional only
(4)
Typical thermal resistance junction-to-lead
Typical thermal resistance junction-to-ambient
Operating junction and storage temperature range
C
Notes:
(1) Non-repetitive current pulse, per Fig.3 and derated above T
A
= 25°C per Fig. 2
(2) Mounted on copper pad area of 1.6 x 1.6” (40 x 40mm) per Fig. 5
(3) Measured on 8.3ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum
(4) V
F
= 3.5V for 1.5KE220(A) & below; V
F
= 5.0V for 1.5KE250(A) & above
Document Number 88301
30-Oct-02
www.vishay.com
1
1.5KE Series and 1N6267 thru 1N6303A
Vishay Semiconductors
formerly General Semiconductor
Electrical Characteristics
(T
JEDEC
Type
Number
1N6267
1N6267A
1N6268
1N6268A
1N6269
1N6269A
1N6270
1N6270A
1N6271
1N6271A
1N6272
1N6272A
1N6273
1N6273A
1N6274
1N6274A
1N6275
1N6275A
1N6276
1N6276A
1N6277
1N6277A
1N6278
1N6278A
1N6279
1N6279A
1N6280
1N6280A
1N6281
1N6281A
1N6282
1N6282A
1N6283
1N6283A
1N6284
1N6284A
1N6285
1N6285A
1N6286
1N6286A
1N6287
1N6287A
1N6288
1N6288A
1N6289
1N6289A
1N6290
1N6290A
1N6291
1N6291A
1N6292
General
Semiconductor
Part
Number
+1.5KE6.8
+1.5KE6.8A
+1.5KE7.5
+1.5KE7.5A
+1.5KE8.2
+1.5KE8.2A
+1.5KE9.1
+1.5KE9.1A
+1.5KE10
+1.5KE10A
+1.5KE11
+1.5KE11A
+1.5KE12
+1.5KE12A
+1.5KE13
+1.5KE13A
+1.5KE15
+1.5KE15A
+1.5KE16
+1.5KE16A
+1.5KE18
+1.5KE18A
+1.5KE20
+1.5KE20A
+1.5KE22
+1.5KE22A
+1.5KE24
+1.5KE24A
+1.5KE27
+1.5KE27A
+1.5KE30
+1.5KE30A
+1.5KE33
+1.5KE33A
+1.5KE36
+1.5KE36A
+1.5KE39
+1.5KE39A
+1.5KE43
+1.5KE43A
+1.5KE47
+1.5KE47A
+1.5KE51
+1.5KE51A
+1.5KE56
+1.5KE56A
+1.5KE62
+1.5KE62A
+1.5KE68
+1.5KE68A
+1.5KE75
A
= 25°C unless otherwise noted)
Breakdown Voltage
V
(BR)
at I
T
(1)
(V)
Min
6.12
6.45
6.75
7.13
7.38
7.79
8.19
8.65
9.00
9.50
9.90
10.5
10.8
11.4
11.7
12.4
13.5
14.3
14.4
15.2
16.2
17.1
18.0
19.0
19.8
20.9
21.6
22.8
24.3
25.7
27.0
28.5
29.7
31.4
32.4
34.2
35.1
37.1
38.7
40.9
42.3
44.7
45.9
48.5
50.4
53.2
55.8
58.9
61.2
64.6
67.5
Max
7.48
7.14
8.25
7.88
9.02
8.61
10.0
9.55
11.0
10.5
12.1
11.6
13.2
12.6
14.3
13.7
16.5
15.8
17.6
16.8
19.8
18.9
22.0
21.0
24.2
23.1
26.4
25.2
29.7
28.4
33.0
31.5
36.3
34.7
39.6
37.8
42.9
41.0
47.3
45.2
51.7
49.4
56.1
53.6
61.8
58.8
68.2
65.1
74.8
71.4
82.5
Test
Current
I
T
(mA)
10
10
10
10
10
10
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
Stand-off
Voltage
V
WM
(V)
5.50
5.80
6.05
6.40
6.63
7.02
7.37
7.78
8.10
8.55
8.92
9.40
9.72
10.2
10.5
11.1
12.1
12.8
12.9
13.6
14.5
15.3
16.2
17.1
17.8
18.8
19.4
20.5
21.8
23.1
24.3
25.6
26.8
28.2
29.1
30.8
31.6
33.3
34.8
36.8
38.1
40.2
41.3
43.6
45.4
47.8
50.2
53.0
55.1
58.1
60.7
Maximum
Reverse
Leakage
at V
WM
I
D
(4)
(µA)
1000
1000
500
500
200
200
50
50
10
10
5.0
5.0
5.0
5.0
5.0
5.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
Maximum
Peak Pulse
Current
I
PPM
(2)
(A)
139
143
128
133
120
124
109
112
100
103
92.6
96.2
86.7
89.8
78.9
82.4
68.2
70.8
63.8
66.7
56.6
59.5
51.5
54.2
47.0
49.0
43.2
45.2
38.4
40.0
34.5
36.2
31.4
32.8
28.8
30.1
26.6
27.8
24.2
25.3
22.1
23.1
20.4
21.4
18.6
19.5
16.9
17.6
15.3
16.3
13.9
Maximum
Clamping
Voltage
at I
PPM
V
C
(V)
10.8
10.5
11.7
11.3
12.5
12.1
13.8
13.4
15.0
14.5
16.2
15.6
17.3
16.7
19.0
18.2
22.0
21.2
23.5
22.5
26.5
25.2
29.1
27.7
31.9
30.6
34.7
33.2
39.1
37.5
43.5
41.4
47.7
45.7
52.0
49.9
56.4
53.9
61.9
59.3
67.8
64.8
73.5
70.1
80.5
77.0
89.0
85.0
98.0
92.0
109
Maximum
Temp.
Coefficient
of V
(BR)
(% /
°C)
0.057
0.057
0.061
0.061
0.065
0.065
0.068
0.068
0.073
0.073
0.075
0.075
0.076
0.078
0.081
0.081
0.084
0.084
0.086
0.086
0.088
0.089
0.090
0.090
0.092
0.092
0.094
0.094
0.096
0.096
0.097
0.097
0.098
0.098
0.099
0.099
0.100
0.100
0.101
0.101
0.101
0.101
0.102
0.102
0.103
0.103
0.104
0.104
0.104
0.104
0.105
www.vishay.com
2
Document Number 88301
30-Oct-02
1.5KE Series and 1N6267 thru 1N6303A
Vishay Semiconductors
formerly General Semiconductor
Electrical Characteristics
(Cont’d)
JEDEC
Type
Number
1N6292A
1N6293
1N6293A
1N6294
1N6294A
1N6295
1N6295A
1N6296
1N6296A
1N6297
1N6297A
1N6298
1N6298A
1N6299
1N6299A
1N6300
1N6300A
1N6301
1N6301A
1N6302
1N6302A
1N6303
1N6303A
General
Semiconductor
Part
Number
+1.5KE75A
+1.5KE82
+1.5KE82A
+1.5KE91
+1.5KE91A
+1.5KE100
+1.5KE100A
+1.5KE110
+1.5KE 110A
+1.5KE120
+1.5KE120A
+1.5KE130
+1.5KE130A
+1.5KE150
+1.5KE150A
+1.5KE160
+1.5KE160A
+1.5KE170
+1.5KE170A
1.5KE180
1.5KE180A
1.5KE200
1.5KE200A*
1.5KE220
1.5KE220A*
1.5KE250
1.5KE250A
1.5KE300
1.5KE300A
1.5KE350
1.5KE350A
1.5KE400
1.5KE400A
1.5KE440
1.5KE440A
1.5KE480
1.5KE480A
1.5KE510
1.5KE510A
1.5KE540
1.5KE540A
Breakdown Voltage
V
(BR)
at I
T
(1)
(V)
Min
71.3
73.8
77.9
81.9
86.5
90.0
95.0
99.0
105
108
114
117
124
136
143
144
152
153
162
162
171
180
190
198
209
225
237
270
285
315
333
360
380
396
418
432
456
459
485
486
513
Max
78.8
90.2
86.1
100.0
95.5
110
105
121
116
132
126
143
137
165
158
176
168
187
179
198
189
220
210
242
231
275
263
330
315
385
368
440
420
484
462
528
504
561
535
594
567
(T
A
= 25°C unless otherwise noted)
Test
Current
I
T
(mA)
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
Stand-off
Voltage
V
WM
(V)
64.1
66.4
70.1
73.7
77.8
81.0
85.5
89.2
94.0
97.2
102
105
111
121
128
130
136
138
145
146
154
162
171
175
185
202
214
243
256
284
300
324
342
356
376
389
408
413
434
437
459
Maximum
Reverse
Leakage
at V
WM
I
D
(4)
(µA)
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
Maximum
Peak Pulse
Current
I
PPM
(2)
(A)
14.6
12.7
13.3
11.5
12.0
10.4
10.9
9.5
9.9
8.7
9.1
8.0
8.4
7.0
7.2
6.5
6.8
6.1
6.4
5.8
6.1
5.2
5.5
4.4
4.6
4.2
4.4
3.5
3.6
3.0
3.1
2.6
2.7
2.4
2.5
2.19
2.28
2.06
2.15
1.94
2.03
Maximum
Clamping
Voltage
at I
PPM
V
C
(V)
104
118
113
131
125
144
137
158
152
173
165
187
179
215
207
230
219
244
234
258
246
287
274
344
328
360
344
430
414
504
482
574
548
631
602
686
658
729
698
772
740
Maximum
Temp.
Coefficient
of V
(BR)
(% /
°C)
0.105
0.105
0.105
0.106
0.106
0.106
0.106
0.107
0.107
0.107
0.107
0.107
0.107
0.108
0.106
0.106
0.108
0.108
0.108
0.108
0.108
0.108
0.108
0.108
0.108
0.110
0.110
0.110
0.110
0.110
0.110
0.110
0.110
0.110
0.110
0.110
0.110
0.110
0.110
0.110
0.110
Notes:
(1) Pulse test: t
p
≤
50ms
(2) Surge current waveform per Fig. 3 and derate per Fig. 2
(3) All terms and symbols are consistent with ANSI/IEEE CA62.35
(4) For bidirectional types with V
R
10 volts and less the I
D
limit is doubled
* Bidirectional versions are UL approved under component across the line protection, ULV1414 file number E108274 (1.5KE200CA, 1.5KE220CA)
+ Underwriters Laboratory Recognition for the classification of protectors (QVGQ2) under the UL standard for safety 497B and file number E136766
for both uni-directional and bi-directional devices
Application
• This series of Silicon Transient Suppressors is used in applications where large voltage transients can permanently damage voltage-sensitive components.
• The TVS diode can be used in applications where induced lightning on rural or remote transmission lines presents a hazard to electronic circuitry
(ref: R.E.A. specification P.E. 60).
• This Transient Voltage Suppressor diode has a pulse power rating of 1500 watts for one millisecond. The response time of TVS diode clamping action is
effectively instantaneous (1 x 10
-9
seconds bidirectional); therefore, they can protect integrated circuits, MOS devices, hybrids, and other voltage sensitive semi-
conductors and components. TVS diodes can also be used in series or parallel to increase the peak power ratings.
射频识别(Radio Frequency Identification，RFID)技术是一种利用无线射频通信实现的非接触式自动识别技术，与目前广泛采用的条形码技术相比，RFID具有容量大、识别距离远、穿透能力强、抗污性强等特点。RFID技术已经发展得比较成熟并获得了大规模商用，但超高频RFID技术相对滞后。本文分析了射频芯片nRF9E5的功能特性，并将其用于RFID系统中，设计了一套有源超高频(...[详细]
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