SSM3J321T
TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOS V)
SSM3J321T
○
Power Management Switch Applications
○
High-Speed Switching Applications
•
•
1.5V drive
Low ON-resistance: R
on
= 137mΩ (max) (@V
GS
= -1.5 V)
R
on
= 88mΩ (max) (@V
GS
= -1.8 V)
R
on
= 62mΩ (max) (@V
GS
= -2.5 V)
R
on
= 46mΩ (max) (@V
GS
= -4.5 V)
2.9±0.2
0.95
1.9±0.2
１
２
３
Unit: mm
+0.2
2.8-0.3
+0.2
1.6-0.1
0.4±0.1
0.15
Absolute Maximum Ratings
(Ta = 25°C)
Characteristic
Drain-Source voltage
Gate-Source voltage
Drain current
Drain power dissipation
Channel temperature
Storage temperature range
DC
Pulse
Symbol
V
DSS
V
GSS
I
D
(Note 1)
I
DP
(Note 1)
P
D
(Note 2)
t=10s
T
ch
T
stg
Rating
-20
±8
-5.2
-10.4
700
1250
150
−55
to150
Unit
V
V
A
mW
°C
°C
0.95
0.7±0.05
TSM
1: Gate
2: Source
3: Drain
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor
Reliability Handbook
(“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate, etc).
JEDEC
JEITA
TOSHIBA
―
―
2-3S1A
Weight: 10mg (typ.)
Note 1: The junction temperature should not exceed 150°C during use.
Note 2: Mounted on an FR4 board. (25.4 mm
×
25.4 mm
×
1.6 mm, Cu Pad: 645 mm
2
)
Marking
3
Equivalent Circuit
(top view)
3
KFA
1
2
1
2
1
2008-10-20
0½0.1
0.16±0.05
SSM3J321T
Electrical Characteristics
(Ta = 25°C)
Characteristic
Drain-Source breakdown voltage
Drain cut-off current
Gate leakage current
Gate threshold voltage
Forward transfer admittance
Symbol
V
(BR) DSS
V
(BR) DSX
I
DSS
I
GSS
V
th
⏐Y
fs
⏐
Test Conditions
I
D
=
-1 mA, V
GS
=
0 V
I
D
=
-1 mA, V
GS
= +8
V
V
DS
=
-20 V, V
GS
=
0 V
V
GS
= ±8
V, V
DS
=
0 V
V
DS
=
-3 V, I
D
=
-1 mA
V
DS
=
-3 V, I
D
=
-3.0 A
I
D
=
-3.0 A, V
GS
=
-4.5 V
Drain–source ON-resistance
R
DS (ON)
I
D
=
-2.0 A, V
GS
=
-2.5 V
I
D
=
-1.0 A, V
GS
=
-1.8 V
I
D
=
-0.3 A, V
GS
=
-1.5 V
Input capacitance
Output capacitance
Reverse transfer capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Switching time
Turn-on time
Turn-off time
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
on
t
off
V
DSF
V
DS
=
−10
V, I
D
=
−4.6
A
V
GS
=
−4.5
V
V
DD
=
-10 V, I
D
=
-2.0 A,
V
GS
=
0 to -2.5 V, R
G
=
4.7
Ω
I
D
=
5.2 A, V
GS
=
0 V
(Note 3)
V
DS
=
-10 V, V
GS
=
0 V, f
=
1 MHz
(Note 3)
(Note 3)
(Note 3)
(Note 3)
(Note 3)
Min
-20
-12
⎯
⎯
-0.3
6.1
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Typ.
⎯
⎯
⎯
⎯
⎯
12.2
37
48
63
78
640
140
100
8.1
6.4
1.7
32
102
0.86
Max
⎯
⎯
-10
±1
-1.0
⎯
46
62
88
137
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
1.2
ns
V
nC
pF
mΩ
Unit
V
μA
μA
V
S
Drain-Source forward voltage
Note3: Pulse test
Switching Time Test Circuit
(a) Test Circuit
OUT
IN
−2.5
V
R
G
R
L
V
DD
90%
(b) V
IN
0V
10%
0
−
2.5V
10
μs
(c) V
OUT
V
DS (ON)
90%
10%
t
r
t
on
t
off
t
f
V
DD
= −
10 V
R
G
=
4.7
Ω
D.U.
≤
1%
V
IN
: t
r
, t
f
<
5 ns
Common Source
Ta
=
25°C
V
DD
Notice on Usage
V
th
can be expressed as the voltage between gate and source when the low operating current value is I
D
= -1 mA for
this product. For normal switching operation, V
GS (on)
requires a higher voltage than V
th
and V
GS (off)
requires a lower
voltage than V
th.
(The relationship can be established as follows: V
GS (off)
< V
th
< V
GS (on).
)
Take this into consideration when using the device.
Handling Precaution
When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is
protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that
come into direct contact with devices should be made of antistatic materials.
2
2008-10-20
SSM3J321T
I
D
– V
DS
-10
-4.5 V
-2.5 V
-1.8 V
-10000
Common Source
VDS
=
-3 V
-1000
I
D
– V
GS
(A)
(mA)
I
D
Drain current
-1.5 V
-8
I
D
-100
-6
Drain current
-10
Ta
=
100 °C
−25
°C
-4
VGS = -1.2 V
-2
Common Source
Ta
=
25 °C
0
-0.2
-0.4
-0.6
-0.8
-1
-1
25 °C
-0.1
0
-0.01
0
-0.5
-1.0
-1.5
-2.0
Drain–source voltage
V
DS
(V)
Gate–source voltage
V
GS
(V)
R
DS (ON)
– V
GS
180
160
ID
=
-0.3 A
Common Source
180
160
R
DS (ON)
– V
GS
ID
=
-3.0 A
Common Source
Drain–source ON-resistance
R
DS (ON)
(mΩ)
140
120
100
80
60
40
20
0
0
-2
-4
25 °C
Ta
=
100 °C
Drain–source ON-resistance
R
DS (ON)
(mΩ)
140
120
100
80
60
40
20
25 °C
Ta
=
100 °C
−25
°C
-6
-8
−25
°C
0
-2
-4
-6
-8
0
Gate–source voltage
V
GS
(V)
Gate–source voltage
V
GS
(V)
R
DS (ON)
– I
D
200
Common Source
Ta
=
25°C
120
Common Source
R
DS (ON)
– Ta
ID
=
-0.3 A / VGS
=
-1.5 V
Drain–source ON-resistance
R
DS (ON)
(mΩ)
Drain–source ON-resistance
R
DS (ON)
(mΩ)
100
-1.0 A / -1.8 V
-2.0 A / -2.5 V
VGS = -1.5 V
100
-1.8 V
-2.5 V
-4.5 V
0
80
60
40
-3.0 A / -4.5 V
20
0
-2
-4
-6
-8
-10
0
−50
0
50
100
150
Drain current
I
D
(A)
Ambient temperature
Ta
(°C)
3
2008-10-20
SSM3J321T
V
th
– Ta
Common Source
(S)
-1.0
|Y
fs
| – I
D
30
10
3
1
0.3
0.1
VDS
=
-3 V
Common Source
VDS
=
-3 V
Ta
=
25 °C
V
th
(V)
-0.8
ID
=
-1 mA
-0.6
-0.4
-0.2
Forward transfer admittance
Gate threshold voltage
⎪Y
fs
⎪
0.03
0.01
0
−50
0
50
100
150
1
-10
-100
-1000
-10000
Ambient temperature
Ta
(°C)
Drain current
I
D
(mA)
5000
3000
C – V
DS
-8
Dynamic Input Characteristic
(pF)
(V)
V
GS
1000
500
300
Coss
Crss
Common Source
Ta
=
25 °C
f
=
1 MHz
Ciss
-6
VDD
=
-10 V
C
Gate–source voltage
Capacitance
-4
VDD
=
-16 V
100
50
30
-2
Common Source
ID
=
-4.6 A
Ta
=
25 °C
0
0
5
10
15
VGS
=
0 V
10
-0.1
-1
-10
-100
Drain–source voltage
V
DS
(V)
Total Gate Charge
Qg
(nC)
t – I
D
1000
toff
Common Source
VDD
=
-10 V
VGS
=
0 to -2.5 V
Ta
=
25 °C
RG
=
4.7
Ω
10
Common Source
VGS
=
0 V
Ta
=
25 °C
I
DR
– V
DS
D
I
DR
(A)
I
DR
(ns)
1
G
0.1
S
tf
100
t
ton
10
tr
Drain reverse current
Switching time
0.01
100 °C
0.001
25 °C
−25
°C
1
-0.01
-0.1
-1
-10
0.0001
0
0.2
0.4
0.6
0.8
1.0
1.2
Drain current
I
D
(A)
Drain–source voltage
V
DS
(V)
4
2008-10-20
SSM3J321T
r
th
1000
–
t
w
1000
P
D
– T
a
a: Mounted on FR4 Board
(25.4mm × 25.4mm × 1.6mm ,
Cu Pad : 645 mm
2
)
b: Mounted on FR4 Board
(25.4mm × 25.4mm × 1.6mm ,
Cu Pad : 0.8 mm
2
×3)
Transient thermal impedance r
th
(°C/W)
b
Drain power dissipation P
D
(mW)
800
a
100
a
600
400
b
10
a: Mounted on FR4 Board
(25.4mm × 25.4mm × 1.6mm ,
Cu Pad : 645 mm
2
)
b: Mounted on FR4 Board
(25.4mm × 25.4mm × 1.6mm ,
Cu Pad : 0.8 mm
2
×3)
0.01
0.1
1
10
100
1000
200
1
0.001
0
-40
-20
0
20
40
60
80
100 120 140 160
Pulse width
t
w
(s)
Ambient temperature
Ta
(°C)
5
2008-10-20
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