NCP45650, NCP45651
Advance Information
ecoSwitcht
Advanced Load Management
Controlled Load Switch with Low R
ON
The NCP4565x series of load management devices provide a
component and area−reducing solution for efficient power domain
switching with inrush current limit via soft start. These devices are
designed to integrate control and driver functionality with a high
performance low on−resistance power MOSFET in a single package.
This cost effective solution is ideal for power management and
disconnect functions in USB ports requiring low power consumption in
a small footprint.
Features
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R
ON
TYP
5.1 mW
5.3 mW
6.0 mW
V
CC
3.3 V
3.3 V
3.3 V
V
IN
1.8 V
5.0 V
12 V
17.5 A
I
MAX
*
* Imax calculated using max R
ON
and min short circuit trip voltage
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Advanced Controller with Charge Pump
Integrated N-Channel MOSFET with Low R
ON
Soft-Start via Controlled Slew Rate
Adjustable Slew Rate Control
Power Good Output
Thermal Shutdown
Under Voltage Lockout
Over Current Protection
Input Voltage Range 1 V to 13.5 V
Extremely Low Standby Current
Load Bleed (NCP45650)
−
No Load Bleed (NCP45651)
This is a Pb−Free Device
Notebook and Tablet Computers
Handheld & Mobile Electronics
Portable Medical Devices
Hard Drives
Peripheral Ports
V
CC
EN
OCP
PG
V
IN
1
DFN12, 3x3
CASE 506DY
MARKING DIAGRAM
XXXXX
XXXXX
ALYWG
G
XXXXX = Specific Device Code
A
= Assembly Location
L
= Wafer Lot
Y
= Year
W
= Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
Typical Applications
PIN CONFIGURATION
V
IN
EN
1
2
3
4
5
6
(Top View)
13: V
IN
12
11
10
9
8
7
V
OUT
V
OUT
V
OUT
V
OUT
V
OUT
SR
Bandgap
&
Biases
Control
Logic
Thermal
Shutdown,
UVLO, &
OCP
OCP
V
CC
GND
PG
Charge
Pump
Delay and
Slew Rate
Control
ORDERING INFORMATION
SR
GND
V
OUT
Device
NCP45650IMNTWG
NCP45651IMNTWG
Package
DFN12
Shipping
TBD
Figure 1. Block Diagram
This document contains information on a new product. Specifications and information
herein are subject to change without notice.
Note: Bleed resistor is contained in the NCP45650
©
Semiconductor Components Industries, LLC, 2018
December, 2018
−
Rev. P0
1
Publication Order Number:
NCP45650/D
NCP45650, NCP45651
Table 1. PIN DESCRIPTION
Pin
1, 13
2
3
4
5
6
7
8
−
12
Name
V
IN
EN
OCP
V
CC
GND
PG
SR
V
OUT
Input voltage (1.5 V
−
13.5 V)
Active−high digital input used to turn on the MOSFET driver, pin has an internal pull down resistor to GND
Over−current protection trip point adjustment made with a voltage applied (0 V – 1.0 V), pin has an internal
pull up resistor (250 kW +/−20%) to EN; float if over−current protection is not needed
Driver supply voltage (3.0 V
−
5.5 V)
Driver ground
Active−high, open−drain output that indicates when the gate of the MOSFET is fully charged, external pull up
resistor
≥
100 kW to an external voltage source required; float if not used.
Slew rate adjustment made with an external capacitor to GND; float if not used
Source of MOSFET connected to load. Includes an internal bleed resistor to GND
Function
Table 2. ABSOLUTE MAXIMUM RATINGS
Rating
Supply Voltage Range
Input Voltage Range
Output Voltage Range
EN Input Voltage Range
PG Output Voltage Range (Note 1)
OCP Input Voltage Range
Thermal Resistance, Junction−to−Ambient, Steady State (Note 2)
Thermal Resistance, Junction−to−Case (V
IN
Paddle)
Continuous MOSFET Current @ T
A
= 25°C (Note 2)
Total Power Dissipation @ T
A
= 25°C (Note 2)
Derate above T
A
= 25°C
Storage Temperature Range
Lead Temperature, Soldering (10 sec.)
ESD Capability, Human Body Model (Notes 3 and 4)
ESD Capability, Charged Device Model (Note 3)
Latch−up Current Immunity (Notes 3 and 4)
Symbol
V
CC
V
IN
V
OUT
V
EN
V
PG
V
OCP
R
θJA
R
θJC
I
MAX
P
D
T
STG
T
SLD
ESD
HBM
ESD
CDM
LU
Value
−0.3
to 6
−0.3
to 18
−0.3
to 18
−0.3
to (V
CC
+ 0.3)
−0.3
to 6
−0.3
to 6
28.6
1.7
24
3.49
34.9
−40
to 150
260
2.0
1.0
100
Unit
V
V
V
V
V
V
°C/W
°C/W
A
W
mW/°C
°C
°C
kV
kV
mA
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. PG is an open−drain output that requires an external pull up resistor
≥
1 kW to an external voltage source.
2. Surface−mounted on FR4 board using the minimum recommended pad size, 1 oz Cu. SC protection will engage before max current is reached.
3. Tested by the following methods @ T
A
= 25°C:
ESD Human Body Model tested per JESD22−A114
ESD Charged Device Model per ESD STM5.3.1
Latch−up Current tested per JESD78
4. Rating is for all pins except for V
IN
and V
OUT
which are tied to the internal MOSFET’s Drain and Source. Typical MOSFET ESD performance
for V
IN
and V
OUT
should be expected and these devices should be treated as ESD sensitive.
Table 3. OPERATING RANGES
Rating
Supply Voltage
Input Voltage
OCP Input Voltage
Ground
Ambient Temperature
Junction Temperature
Symbol
V
CC
V
IN
V
OCP
GND
T
A
T
J
−40
−40
Min
3
1
0
Max
5.5
13.5
1
0
85
125
Unit
V
V
V
V
°C
°C
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.
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NCP45650, NCP45651
Table 4. ELECTRICAL CHARACTERISTICS
(T
J
= 25°C, V
CC
= 3 V
−
5.5 V, unless otherwise specified)
Parameter
MOSFET
On−Resistance
V
CC
= 3.3 V; V
IN
= 1.8 V
V
CC
= 3.3 V; V
IN
= 5 V
V
CC
= 3.3 V; V
IN
= 12 V
V
CC
= 3.3 V; V
IN =
13.5V
Leakage Current (Note 5)
CONTROLLER
Supply Standby Current (Note 6)
Supply Dynamic Current (Note 7)
Internal Load Bleed Resistance (Note 8)
Internal Bleed Leakage Current
EN Input High Voltage
EN Input Low Voltage
EN Input Leakage Current
EN Pull Down Resistance
PG Output Low Voltage
PG Output Leakage Current
Slew Rate Control Constant (Note 9)
FAULT PROTECTIONS
Thermal Shutdown Threshold (Note 10)
Thermal Shutdown Hysteresis (Note 10)
V
IN
Under Voltage Lockout Threshold
V
IN
Under Voltage Lockout Hysteresis
Over−Current Protection Trip Voltage Low Vin
V
IN
rising; Vcc = 3 V
Vcc = 3 V
V
IN
< 4.5 V, V
OCP
= 0 V
V
IN
< 4.5 V, V
OCP
= 0.25 V
V
IN
< 4.5 V, V
OCP
= 0.5 V
V
IN
< 4.5 V, V
OCP
= 0.75 V
V
IN
< 4.5 V, V
OCP
= 1 V
Over−Current Protection Trip Voltage High Vin
V
IN
> 4.5 V, V
OCP
= 0 V
V
IN
> 4.5 V, V
OCP
= 0.25 V
V
IN
> 4.5 V, V
OCP
= 0.5 V
V
IN
> 4.5 V, V
OCP
= 0.75 V
V
IN
> 4.5 V, V
OCP
= 1 V
Over−Current Protection Blanking Time
OCP Pull Up Resistance (Note 11)
Short−Circuit Protection Trip Voltage Low Vin
Short−Circuit Protection Trip Voltage High Vin
Vcc = 3 V
t
OCP
R
OCP
V
SC_LVIN
V
SC_HVIN
V
TRIP_HVIN
T
SDT
T
HYS
V
UVLO
V
HYS
V
TRIP_LVIN
670
40
10
20
50
80
110
10
45
75
105
135
2
200
110
135
155
40
710
87
24
48
79
111
143
28
59
90
121
153
3.4
250
150
160
750
120
40
80
110
140
180
40
80
110
140
180
5
300
190
190
ms
kW
mV
mV
mV
°C
°C
mV
mV
mV
I
SINK
= 5 mA
V
TERM
= 3.3 V
Vin = 5 V; Vcc = 3 V
V
EN
= 0 V
V
EN
= 0 V
V
EN
= V
CC
= 3 V; V
IN
= 12 V
V
EN
= V
CC
= 5.5 V; V
IN
= 1 V
V
EN
= 0 V
R
BLEED
I
BLEED
V
IH
V
IL
I
IL
R
PD
V
OL
I
OH
K
SR
25
110
0.092
100
0.12
5
33
2
0.8
1
120
0.2
100
41
300
I
STBY
I
DYN
2.7
450
740
590
15.3
5
750
1000
1000
80
W
mA
V
V
mA
kΩ
V
nA
mA
mA
mA
V
EN
= 0 V; V
IN
= 13.5 V
I
LEAK
R
ON
5.1
5.3
6.0
6.7
5
6.7
6.9
7.5
8.5
100
nA
mW
Conditions
Symbol
Min
Typ
Max
Unit
5. Average current from V
IN
to V
OUT
with MOSFET turned off.
6. Average current from V
CC
to GND with MOSFET turned off and Vin is 13.5 V.
7. Average current from V
CC
to GND after MOSFET gate is charged.
8. Resistance from VOUT to GND when the MOSFET driver is disabled.
9. See Applications Information section for details on how to adjust the gate slew rate.
10. Operation above T
J
= 125°C is not guaranteed.
11. Internal resistor from OCP to EN used to pull up on OCP pin if not driven.
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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NCP45650, NCP45651
Vin < 4.5V
28A
24A
OCP=1.0V / OCP Floating
I
MAX
OCP=0.5V
29A
24A
Vin > 4.5V
OCP=1.0V / OCP Floating
I
MAX
OCP=0.5V
NCP4565x
I
LOAD
15.5A
I
LOAD
17A
5.4A
OCP=0V
OCP=0V
UVL
5.2A
0A
0A
VIN = 0V-0.8V
VIN = 1V – 4.5V
VIN = 4.5V-13.5V
Vout = I
LOAD
(when R
L
=1Ω and bleed resistor is connected)
Vout = I
LOAD
(when R
L
=1Ω and bleed resistor is connected)
Figure 2. Safe Operating Area Plots (green represents non−fault conditions)
Table 5. SWITCHING CHARACTERISTICS
(T
J
= 25°C unless otherwise specified) (Notes 12 and 13)
Parameter
Output Slew Rate
−
Default
Conditions
V
CC
= 3.3 V; V
IN
= 1.8 V
V
CC
= 5.0 V; V
IN
= 1.8 V
V
CC
= 3.3 V; V
IN
= 12 V
V
CC
= 5.0 V; V
IN
= 12 V
Output Turn−on Delay
V
CC
= 3.3 V; V
IN
= 1.8 V
V
CC
= 5.0 V; V
IN
= 1.8 V
V
CC
= 3.3 V; V
IN
= 12 V
V
CC
= 5.0 V; V
IN
= 12 V
Output Turn−off Delay
V
CC
= 3.3 V; V
IN
= 1.8 V
V
CC
= 5.0 V; V
IN
= 1.8 V
V
CC
= 3.3 V; V
IN
= 12 V
V
CC
= 5.0 V; V
IN
= 12 V
Power Good Turn−on Time
V
CC
= 3.3 V; V
IN
= 1.8 V
V
CC
= 5.0 V; V
IN
= 1.8 V
V
CC
= 3.3 V; V
IN
= 12 V
V
CC
= 5.0 V; V
IN
= 12 V
Power Good Turn−off Time
V
CC
= 3.3 V; V
IN
= 1.8 V
V
CC
= 5.0 V; V
IN
= 1.8 V
V
CC
= 3.3 V; V
IN
= 12 V
V
CC
= 5.0 V; V
IN
= 12 V
12. See below figure for Test Circuit and Timing Diagram.
13. Tested with the following conditions: V
TERM
= V
CC
; R
PG
= 100 kW; R
L
= 10
W;
C
L
= 0.1
mF.
T
PG,OFF
T
PG,ON
T
OFF
T
ON
Symbol
SR
Min
Typ
19
19
21
22
138
170
260
250
2.0
1.6
0.7
0.4
1.02
0.95
1.52
1.23
20
14
20
14
ns
ms
ms
ms
Max
Unit
V/ms
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NCP45650, NCP45651
V
TERM
OFF ON
EN
V
IN
V
CC
NCP4565x
GND
PG
R
PG
V
OUT
OCP
SR
R
L
C
L
V
EN
50%
T
ON
Dt
90%
DV
Dt
50%
T
OFF
90%
DV
SR=
V
OUT
10%
T
PG,ON
T
PG,OFF
50%
50%
V
PG
Figure 3. Switching Characteristics Test Circuit and Timing Diagrams
APPLICATIONS INFORMATION
Enable Control
The NCP4565x parts allow for enabling the MOSFET in
an active−high configuration. When the EN pin is at a logic
high level and the V
CC
supply pin has an adequate voltage
applied, the MOSFET will be enabled. Similarly, when the
EN pin is at a logic low level, the MOSFET will be disabled.
An internal pull down resistor to ground on the EN pin
ensures that the MOSFET will be disabled when not being
driven.
Load Bleed
The NCP45650 device has an on−chip bleed resistor that
is used to bleed the charge off of the load to ground after the
MOSFET has been disabled. In series with the bleed resistor
is a bleed switch that is enabled whenever the MOSFET is
disabled. Delays are added to the enable of this switch to
ensure that both the MOSFET and the bleed switch are not
concurrently active. The NCP45651 does not include the
load bleed function.
Over−Current and Short−Circuit Protection
threshold voltage, the MOSFET is immediately turned off
and for the NCP45650 the load bleed is activated. The part
remains latched in this off state until EN is toggled or V
CC
supply voltage is cycled, at which point the MOSFET will
be turned on in a controlled fashion with the normal output
turn−on delay and slew rate.
The over−current trip point can be controlled with the
OCP pin to allow for protection before the short−circuit
threshold. If no adjustment is needed, then OCP can be left
floating. In the event the OCP threshold is exceeded, the
MOSFET will shut down after the blanking time if the
voltage difference remains greater than the threshold. Like
the short−circuit protection, the part remains latched in this
off state until EN is toggled or V
CC
supply voltage is cycled,
at which point the MOSFET will be turned on in a controlled
fashion with the normal output turn−on delay and slew rate.
Thermal Shutdown
The NCP4565x devices are equipped with over−current
and short−circuit protection that are used to help protect the
part and the system from a sudden high−current event, such
as the output, V
OUT
, being shorted to ground. This circuitry
is only active when the gate of the MOSFET is fully driven.
Once active, the circuitry monitors the difference in the
voltage on the V
IN
pin and the voltage on the V
OUT
pin.
When the difference is equal to the short−circuit protection
The thermal shutdown of the NCP4565x devices protect
the part from internally or externally generated excessive
temperatures. This circuitry is disabled when EN is not
active to reduce standby current. When an over−temperature
condition is detected, the MOSFET is immediately turned
off and the load bleed is activated.
The part comes out of thermal shutdown when the
junction temperature decreases to a safe operating
temperature as dictated by the thermal hysteresis. Upon
exiting a thermal shutdown state, and if EN remains active,
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