BT139B-600F
4Q Triac
27 September 2013
Product data sheet
1. General description
Planar passivated four quadrant triac in a SOT404 (D2PAK) surface-mountable plastic
package intended for use in applications requiring high bidirectional transient and
blocking voltage capability and high thermal cycling performance. Typical applications
include motor control, industrial and domestic lighting, heating and static switching.
2. Features and benefits
•
•
•
•
•
High blocking voltage capability
Less sensitive gate for improved noise immunity
Planar passivated for voltage ruggedness and reliability
Surface-mountable package
Triggering in all four quadrants
3. Applications
•
•
General purpose motor control
General purpose switching
4. Quick reference data
Table 1.
Symbol
V
DRM
I
TSM
I
T(RMS)
Quick reference data
Parameter
repetitive peak off-
state voltage
non-repetitive peak on- full sine wave; T
j(init)
= 25 °C;
state current
t
p
= 20 ms;
Fig. 4; Fig. 5
RMS on-state current
full sine wave; T
mb
≤ 99 °C;
Fig. 1;
Fig. 2; Fig. 3
Static characteristics
I
GT
gate trigger current
V
D
= 12 V; I
T
= 0.1 A; T2+ G+;
T
j
= 25 °C;
Fig. 7
V
D
= 12 V; I
T
= 0.1 A; T2+ G-;
T
j
= 25 °C;
Fig. 7
V
D
= 12 V; I
T
= 0.1 A; T2- G-;
T
j
= 25 °C;
Fig. 7
-
10
25
mA
-
8
25
mA
-
8
25
mA
Conditions
Min
-
-
-
Typ
-
-
-
Max
600
155
16
Unit
V
A
A
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D2
PA
K
NXP Semiconductors
BT139B-600F
4Q Triac
Symbol
Parameter
Conditions
V
D
= 12 V; I
T
= 0.1 A; T2- G+;
T
j
= 25 °C;
Fig. 7
Min
-
Typ
22
Max
70
Unit
mA
5. Pinning information
Table 2.
Pin
1
2
3
mb
Pinning information
Symbol Description
T1
T2
G
T2
main terminal 1
main terminal 2
gate
mounting base; main
terminal 2
2
1
3
Simplified outline
mb
Graphic symbol
T2
sym051
T1
G
D2PAK (SOT404)
6. Ordering information
Table 3.
Ordering information
Package
Name
BT139B-600F
D2PAK
Description
Version
plastic single-ended surface-mounted package (D2PAK); 3 leads SOT404
(one lead cropped)
Type number
BT139B-600F
All information provided in this document is subject to legal disclaimers.
© NXP N.V. 2013. All rights reserved
Product data sheet
27 September 2013
2 / 14
NXP Semiconductors
BT139B-600F
4Q Triac
7. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DRM
I
T(RMS)
I
TSM
Parameter
repetitive peak off-state voltage
RMS on-state current
non-repetitive peak on-state
current
full sine wave; T
mb
≤ 99 °C;
Fig. 1;
Fig. 2; Fig. 3
full sine wave; T
j(init)
= 25 °C;
t
p
= 20 ms;
Fig. 4; Fig. 5
full sine wave; T
j(init)
= 25 °C;
t
p
= 16.7 ms
I t
dI
T
/dt
2
Conditions
Min
-
-
-
-
-
-
-
-
-
-
-
Max
600
16
155
170
120
50
50
50
10
2
5
0.5
150
125
Unit
V
A
A
A
2
I2t for fusing
rate of rise of on-state current
t
p
= 10 ms; SIN
I
T
= 20 A; I
G
= 0.2 A; dI
G
/dt = 0.2 A/µs;
T2+ G+
I
T
= 20 A; I
G
= 0.2 A; dI
G
/dt = 0.2 A/µs;
T2+ G-
I
T
= 20 A; I
G
= 0.2 A; dI
G
/dt = 0.2 A/µs;
T2- G-
I
T
= 20 A; I
G
= 0.2 A; dI
G
/dt = 0.2 A/µs;
T2- G+
A s
A/µs
A/µs
A/µs
A/µs
A
W
W
°C
°C
I
GM
P
GM
P
G(AV)
T
stg
T
j
peak gate current
peak gate power
average gate power
storage temperature
junction temperature
over any 20 ms period
-
-40
-
BT139B-600F
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© NXP N.V. 2013. All rights reserved
Product data sheet
27 September 2013
3 / 14
NXP Semiconductors
BT139B-600F
4Q Triac
50
I
T(RMS)
(A)
40
001aab090
20
I
T(RMS)
(A)
15
001aab091
(1)
30
10
20
5
10
0
10
- 2
10
- 1
1
10
surge duration (s)
0
- 50
0
50
100
T
mb
(°C)
150
f = 50 Hz; T
mb
= 99 °C
Fig. 1.
RMS on-state current as a function of surge
duration; maximum values
25
P
tot
(W)
20
(1) T
mb
= 99 °C
Fig. 2.
RMS on-state current as a function of mounting
base temperature; maximum values
001aab093
95
T
mb(max)
(°C)
101
α=
180
120
90
15
60
30
107
10
α
113
5
α
119
0
0
5
10
15
I
T(RMS)
(A)
125
20
α = conduction angle
a = form factor = I
T(RMS)
/ I
T(AV)
Fig. 3.
Total power dissipation as a function of RMS on-state current; maximum values.
BT139B-600F
All information provided in this document is subject to legal disclaimers.
© NXP N.V. 2013. All rights reserved
Product data sheet
27 September 2013
4 / 14
NXP Semiconductors
BT139B-600F
4Q Triac
160
I
TSM
(A)
120
I
T
001aab102
I
TSM
80
t
T
j(initial)
= 25 °C max
T
40
0
1
10
10
2
n
10
3
f = 50 Hz; n = number of cycles
Fig. 4.
Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values
10
3
001aab092
I
TSM
(A)
10
2
(1)
I
T
I
TSM
(2)
10
10
- 2
t
T
j(initial)
= 25 °C max
10
- 1
1
10
T (ms)
10
2
T
t
p
≤ 20 ms
(1) dI
T
/dt limit
(2) T2- G+ quadrant limit
Fig. 5.
Non-repetitive peak on-state current as a function of pulse width; maximum values
BT139B-600F
All information provided in this document is subject to legal disclaimers.
© NXP N.V. 2013. All rights reserved
Product data sheet
27 September 2013
5 / 14
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