Am29LV800D
Data Sheet
For new designs, S29AL008D supersedes Am29LV800D and is the factory-recommended migration
path. Please refer to the S29AL008D Data Sheet for specifications and ordering information.
July 2003
The following document specifies Spansion memory products that are now offered by both Advanced
Micro Devices and Fujitsu. Although the document is marked with the name of the company that orig-
inally developed the specification, these products will be offered to customers of both AMD and
Fujitsu.
Continuity of Specifications
There is no change to this datasheet as a result of offering the device as a Spansion product. Any
changes that have been made are the result of normal datasheet improvement and are noted in the
document revision summary, where supported. Future routine revisions will occur when appropriate,
and changes will be noted in a revision summary.
Continuity of Ordering Part Numbers
AMD and Fujitsu continue to support existing part numbers beginning with “Am” and “MBM”. To order
these products, please use only the Ordering Part Numbers listed in this document.
For More Information
Please contact your local AMD or Fujitsu sales office for additional information about Spansion
memory solutions.
Publication Number
Am29LV800D_00
Revision
A
Amendment
4
Issue Date
January 21, 2005
THIS PAGE LEFT INTENTIONALLY BLANK.
PRELIMINARY
Am29LV800D
8 Megabit (1 M x 8-Bit/512 K x 16-Bit)
CMOS 3.0 Volt-only Boot Sector Flash Memory
For new designs, S29AL008D supersedes Am29LV800D and is the factory-recommended migration
path. Please refer to the S29AL008D Data Sheet for specifications and ordering information.
Distinctive Characteristics
■
Single power supply operation
— 2.7 to 3.6 volt read and write operations
for battery-powered applications
■
Manufactured on 0.23 µm process
technology
■
Top or bottom boot block configurations
available
■
Embedded Algorithms
— Compatible with 0.32 µm Am29LV800
device
■
High performance
— Embedded Erase algorithm automatically
preprograms and erases the entire chip or any
combination of designated sectors
— Embedded Program algorithm
automatically writes and verifies data at
specified addresses
■
Minimum 1 million write cycle guarantee
per sector
■
20-year data retention at 125°C
— Access times as fast as 70 ns
■
Ultra low power consumption (typical
values at 5 MHz)
— 200 nA Automatic Sleep mode current
— 200 nA standby mode current
— 7 mA read current
— 15 mA program/erase current
■
Flexible sector architecture
— Reliable operation for the life of the system
■
Package option
— 48-ball FBGA
— 48-pin TSOP
— 44-pin SO
■
Compatibility with JEDEC standards
— One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and
fifteen 64 Kbyte sectors (byte mode)
— One 8 Kword, two 4 Kword, one 16 Kword, and
fifteen 32 Kword sectors (word mode)
— Supports full chip erase
— Sector Protection features:
A hardware method of locking a sector to prevent
any program or erase operations within that
sector
Sectors can be locked in-system or via
programming equipment
Temporary Sector Unprotect feature allows code
changes in previously locked sectors
■
Unlock Bypass Program Command
— Pinout and software compatible with single-
power supply Flash
— Superior inadvertent write protection
■
Data# Polling and toggle bits
— Provides a software method of detecting
program or erase operation completion
■
Ready/Busy# pin (RY/BY#)
— Provides a hardware method of detecting
program or erase cycle completion
■
Erase Suspend/Erase Resume
— Reduces overall programming time when
issuing multiple program command
sequences
— Suspends an erase operation to read data from,
or program data to, a sector that is not being
erased, then resumes the erase operation
■
Hardware reset pin (RESET#)
— Hardware method to reset the device to
reading array data
This document contains information on a product under development at FASL LLC. The information is intended to
help you evaluate this product. FASL LLC reserves the right to change or discontinue work on this proposed product
without notice.
Publication
Am29LV800D_00
Rev.
A
Amend.
4
Issue Date:
January 21, 2005
P R E L I M I N A R Y
General Description
The Am29LV800D is an 8 Mbit, 3.0 volt-only
Flash memory organized as 1,048,576 bytes or
524,288 words. The device is offered in 48-ball
FBGA, 44-pin SO, and 48-pin TSOP packages.
For more information, refer to publication
number 21536. The word-wide data (x16)
appears on DQ15–DQ0; the byte-wide (x8) data
appears on DQ7–DQ0. This device requires only
a single, 3.0 volt V
CC
supply to perform read,
program, and erase operations. A standard
EPROM programmer can also be used to program
and erase the device.
This device is manufactured using AMD’s 0.23
µm process technology, and offers all the fea-
tures and benefits of the Am29LV800B, which
was manufactured using 0.32 µm process tech-
nology.
The standard device offers access times of 70,
90, and 120 ns, allowing high speed micropro-
cessors to operate without wait states. To elim-
inate bus contention the device has separate
chip enable (CE#), write enable (WE#) and
output enable (OE#) controls.
The device requires only a
single 3.0 volt
power supply
for both read and write func-
tions. Internally generated and regulated volt-
ages are provided for the program and erase
operations.
The device is entirely command set compatible
with the
JEDEC single-power-supply Flash
stan dard.
C om mands are written to the
command register using standard micropro-
cessor write timings. Register contents serve as
input to an internal state-machine that controls
the erase and programming circuitry. Write
cycles also internally latch addresses and data
needed for the programming and erase opera-
tions. Reading data out of the device is similar
to reading from other Flash or EPROM devices.
Device programming occurs by executing the
program command sequence. This initiates the
Embedded Program
algorithm—an internal
algorithm that automatically times the program
pulse widths and verifies proper cell margin. The
Unlock Bypass
mode facilitates faster pro-
gramming times by requiring only two write
cycles to program data instead of four.
Device erasure occurs by executing the erase
command sequence. This initiates the
Embedded Erase
algorithm—an internal algo-
rithm that automatically preprograms the array
(if it is not already programmed) before exe-
cuting the erase operation. During erase, the
device automatically times the erase pulse
widths and verifies proper cell margin.
The host system can detect whether a program
or erase operation is complete by observing the
RY/BY# pin, or by reading the DQ7 (Data#
Polling) and DQ6 (toggle)
status bits.
After a
program or erase cycle has been completed, the
device is ready to read array data or accept
another command.
The
sector erase architecture
allows memory
sectors to be erased and reprogrammed without
affecting the data contents of other sectors. The
device is fully erased when shipped from the
factory.
Hardware data protection
measures include
a low V
CC
detector that automatically inhibits
write operations during power transitions. The
hardware sector protection
feature disables
both program and erase operations in any com-
bination of the sectors of memory. This can be
achieved in-system or via programming equip-
ment.
The
Erase Suspend
feature enables the user to
put erase on hold for any period of time to read
data from, or program data to, any sector that
is not selected for erasure. True background
erase can thus be achieved.
The
hardware RESET# pin
terminates any
operation in progress and resets the internal
state machine to reading array data. The
RESET# pin may be tied to the system reset cir-
cuitry. A system reset would thus also reset the
device, enabling the system microprocessor to
read the boot-up firmware from the Flash
memory.
The device offers two power-saving features.
When addresses have been stable for a specified
amount of time, the device enters the
auto-
matic sleep mode.
The system can also place
the device into the
standby mode.
Power con-
sumption is greatly reduced in both these
modes.
AMD’s Flash technology combines years of Flash
memory manufacturing experience to produce
the highest levels of quality, reliability and cost
effectiveness. The device electrically erases
all bi ts wi thin a sec to r simultaneously via
Fowler-Nordheim tunneling. The data is pro-
grammed using hot electron injection.
2
Am29LV800D
Am29LV800D_00_A4_E January 21, 2005
P R E L I M I N A R Y
Table Of Contents
Product Selector Guide . . . . . . . . . . . . . . . . . . . . . 4
Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Connection Diagrams . . . . . . . . . . . . . . . . . . . . . . 5
Special Handling Instructions for FBGA Package .............. 7
Pin Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Logic Symbol . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Ordering Information . . . . . . . . . . . . . . . . . . . . . . . 8
Standard Products ......................................................................8
Valid Combinations . . . . . . . . . . . . . . . . . . . . . . . . . 9
Device Bus Operations . . . . . . . . . . . . . . . . . . . . . . 10
Table 1. Am29LV800D Device Bus Operations .10
Absolute Maximum Ratings . . . . . . . . . . . . . . . . 27
Operating Ranges . . . . . . . . . . . . . . . . . . . . . . . . . 27
DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . .28
CMOS Compatible .................................................................. 28
Figure 1. I
CC1
Current vs. Time (Showing Active
and Automatic Sleep Currents) .................... 29
Figure 1. Typical I
CC1
vs. Frequency ............. 29
Test Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . .30
Figure 1. Test Setup................................... 30
Table 7. Test Specifications ........................................30
Key to Switching Waveforms. . . . . . . . . . . . . . . . 30
Figure 1. Input Waveforms and
Measurement Levels................................... 30
Word/Byte Configuration ...................................................... 10
Requirements for Reading Array Data ............................... 10
Writing Commands/Command Sequences .........................11
Program and Erase Operation Status ...................................11
Standby Mode ..............................................................................11
Automatic Sleep Mode ..............................................................11
RESET#: Hardware Reset Pin .................................................11
Output Disable Mode ...............................................................12
Table 2. Am29LV800DT Top Boot Block
Sector Addresses ........................................12
Table 3. Am29LV800DB Bottom Boot Block
Sector Addresses ........................................13
AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . 31
Read Operations ........................................................................31
Figure 1. Read Operations Timings ............... 31
Hardware Reset (RESET#) ....................................................32
Figure 1. RESET# Timings........................... 32
Word/Byte Configuration (BYTE#) ..................................33
Figure 1. BYTE# Timings for Read
Operations ................................................ 34
Figure 1. BYTE# Timings for Write
Operations ................................................ 34
Autoselect Mode ........................................................................13
Table 4. Am29LV800D Autoselect Codes
(High Voltage Method) ................................14
Erase/Program Operations ....................................................35
Figure 1. Program Operation Timings............
Figure 1. Chip/Sector Erase Operation
Timings ....................................................
Figure 1. Data# Polling Timings (During
Embedded Algorithms) ...............................
Figure 1. Toggle Bit Timings (During
Embedded Algorithms) ...............................
Figure 1. DQ2 vs. DQ6 ...............................
36
37
38
38
39
Sector Protection/Unprotection .......................................... 14
Temporary Sector Unprotect ............................................... 14
Figure 1. Temporary Sector Unprotect
Operation .................................................. 15
Figure 2. In-System Sector Protect/
Sector Unprotect Algorithms ........................ 16
Hardware Data Protection .....................................................17
Command Definitions . . . . . . . . . . . . . . . . . . . . . . 17
Reading Array Data ...................................................................17
Reset Command .........................................................................17
Autoselect Command Sequence .......................................... 18
Word/Byte Program Command Sequence ....................... 18
Figure 1. Program Operation ........................ 19
Temporary Sector Unprotect ...............................................39
Figure 1. Temporary Sector Unprotect
Timing Diagram ......................................... 39
Figure 1. Sector Protect/Unprotect
Timing Diagram ......................................... 40
Alternate CE# Controlled
Erase/Program Operations .................................................... 41
Figure 1. Alternate CE# Controlled Write
Operation Timings...................................... 42
Chip Erase Command Sequence .......................................... 19
Sector Erase Command Sequence ...................................... 19
Erase Suspend/Erase Resume Commands ....................... 20
Figure 1. Erase Operation ............................ 21
Table 5. Am29LV800D Command Definitions ..21
Write Operation Status . . . . . . . . . . . . . . . . . . . . 22
DQ7: Data# Polling ..................................................................22
Figure 1. Data# Polling Algorithm ................. 23
RY/BY#: Ready/Busy# .............................................................23
DQ6: Toggle Bit I ......................................................................24
DQ2: Toggle Bit II .....................................................................24
Reading Toggle Bits DQ6/DQ2 ............................................24
DQ5: Exceeded Timing Limits ..............................................25
DQ3: Sector Erase Timer .......................................................25
Figure 1. Toggle Bit Algorithm ...................... 25
Table 6. Write Operation Status ....................26
Erase and Programming Performance . . . . . . . . . 43
Latchup Characteristics . . . . . . . . . . . . . . . . . . . . 43
TSOP and SO Pin Capacitance . . . . . . . . . . . . . . 43
Data Retention . . . . . . . . . . . . . . . . . . . . . . . . . . . 43
Physical Dimensions* . . . . . . . . . . . . . . . . . . . . . . .44
TS 048—48-Pin Standard TSOP ........................................ 44
TSR048—48-Pin Reverse TSOP .........................................45
FBB 048—48-Ball Fine-Pitch Ball Grid Array
(FBGA) 6 x 9 mm ................................................................... 46
Physical Dimensions . . . . . . . . . . . . . . . . . . . . . . . 47
VBK 048 - 48 Ball Fine-Pitch Ball Grid Array
(FBGA) 6.15 x 8.15 mm .............................................................47
SO 044—44-Pin Small Outline Package .......................... 48
Revision Summary . . . . . . . . . . . . . . . . . . . . . . . . .49
January 21, 2005 Am29LV800D_00_A4_E
Am29LV800D
3
测试/测量
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