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BC556/557/558/559/560
BC556/557/558/559/560
Switching and Amplifier
• High Voltage: BC556, V
CEO
= -65V
• Low Noise: BC559, BC560
• Complement to BC546 ... BC 550
1
TO-92
1. Collector 2. Base 3. Emitter
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25°C unless otherwise noted
Symbol
V
CBO
Parameter
Collector-Base Voltage
: BC556
: BC557/560
: BC558/559
Collector-Emitter Voltage
: BC556
: BC557/560
: BC558/559
Emitter-Base Voltage
Collector Current (DC)
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
-80
-50
-30
-65
-45
-30
-5
-100
500
150
-65 ~ 150
Units
V
V
V
V
V
V
V
mA
mW
°C
°C
V
CEO
V
EBO
I
C
P
C
T
J
T
STG
Electrical Characteristics
T
a
=25°C unless otherwise noted
Symbol
I
CBO
h
FE
V
CE
(sat)
V
BE
(sat)
V
BE
(on)
f
T
C
ob
NF
Parameter
Collector Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Collector-Base Saturation Voltage
Base-Emitter On Voltage
Current Gain Bandwidth Product
Output Capacitance
Noise Figure
: BC556/557/558
: BC559/560
: BC559
: BC560
Test Condition
V
CB
= -30V, I
E
=0
V
CE
= -5V, I
C
=2mA
I
C
= -10mA, I
B
= -0.5mA
I
C
= -100mA, I
B
= -5mA
I
C
= -10mA, I
B
= -0.5mA
I
C
= -100mA, I
B
= -5mA
V
CE
= -5V, I
C
= -2mA
V
CE
= -5V, I
C
= -10mA
V
CE
= -5V, I
C
= -10mA, f=10MHz
V
CB
= -10V, I
E
=0, f=1MHz
V
CE
= -5V, I
C
= -200µA
f=1KHz, R
G
=2KΩ
V
CE
= -5V, I
C
= -200µA
R
G
=2KΩ, f=30~15000MHz
2
1
1.2
1.2
-600
Min.
110
-90
-250
-700
-900
-660
150
6
10
4
4
2
-750
-800
Typ.
Max.
-15
800
-300
-650
mV
mV
mV
mV
mV
mV
MHz
pF
dB
dB
dB
dB
Units
nA
h
FE
Classification
Classification
h
FE
A
110 ~ 220
B
200 ~ 450
C
420 ~ 800
©2002 Fairchild Semiconductor Corporation
Rev. A2, August 2002
BC556/557/558/559/560
Typical Characteristics
-50
-45
1000
I
B
= -400
µ
A
I
B
= -350
µ
A
V
CE
= -5V
I
C
[mA], COLLECTOR CURRENT
-40
-35
-30
-25
-20
-15
-10
-5
-0
-2
-4
-6
-8
-10
h
FE
, DC CURRENT GAIN
I
B
= -300
µ
A
I
B
= -250
µ
A
I
B
= -200
µ
A
I
B
= -150
µ
A
I
B
= -100
µ
A
I
B
= -50
µ
A
100
10
-12
-14
-16
-18
-20
1
-0.1
-1
-10
-100
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
I
C
[mA], COLLECTOR CURRENT
Figure 1. Static Characteristic
Figure 2. DC current Gain
V
BE
(sat), V
CE
(sat)[V], SATURATION VOLTAGE
-10
-100
-1
V
BE
(sat)
I
C
[mA], COLLECTOR CURRENT
I
C
= -10 I
B
V
CE
= -5V
-10
-0.1
-1
V
CE
(sat)
-0.01
-0.1
-0.1
-1
-10
-100
-0.2
-0.4
-0.6
-0.8
-1.0
-1.2
I
C
[mA], COLLECTOR CURRENT
V
BE
[V], BASE-EMITTER VOLTAGE
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 4. Base-Emitter On Voltage
f
T
[MHz], CURRENT GAIN-BANDWIDTH PRODUCT
1000
C
ob
(pF), CAPACITANCE
10
f=1MHz
I
E
= 0
V
CE
= -5V
100
1
-1
-10
-100
10
-1
-10
V
CB
[V], COLLECTOR-BASE VOLTAGE
I
C
[mA], COLLECTOR CURRENT
Figure 5. Collector Output Capacitance
Figure 6. Current Gain Bandwidth Product
©2002 Fairchild Semiconductor Corporation
Rev. A2, August 2002
BC556/557/558/559/560
Package Dimensions
TO-92
4.58
–0.15
+0.25
0.46
14.47
±0.40
±0.10
4.58
±0.20
1.27TYP
[1.27
±0.20
]
3.60
±0.20
1.27TYP
[1.27
±0.20
]
0.38
–0.05
+0.10
3.86MAX
1.02
±0.10
0.38
–0.05
+0.10
(R2.29)
(0.25)
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation
Rev. A2, August 2002
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
ACEx™
FACT™
ActiveArray™
FACT Quiet series™
Bottomless™
FAST
®
FASTr™
CoolFET™
CROSSVOLT™
FRFET™
GlobalOptoisolator™
DOME™
EcoSPARK™
GTO™
2
CMOS™
E
HiSeC™
EnSigna™
I
2
C™
Across the board. Around the world.™
The Power Franchise™
Programmable Active Droop™
DISCLAIMER
ImpliedDisconnect™
ISOPLANAR™
LittleFET™
MicroFET™
MicroPak™
MICROWIRE™
MSX™
MSXPro™
OCX™
OCXPro™
OPTOLOGIC
®
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerTrench
®
QFET™
QS™
QT Optoelectronics™
Quiet Series™
RapidConfigure™
RapidConnect™
SILENT SWITCHER
®
SMART START™
SPM™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
TruTranslation™
UHC™
UltraFET
®
VCX™
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or In
Design
First Production
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
©2002 Fairchild Semiconductor Corporation
Rev. I1
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