CT60AM-18C
Insulated Gate Bipolar Transistor
REJ03G0287-0100
Rev.1.00
Aug.20.2004
Features
•
•
•
•
V
CES
: 900 V
I
C
: 60 A
Integrated fast-recovery diode
For voltage-resonance
Appearance Figure
TO-3PL
2, 4
4
1
1
2
3
3
1 : Gate
2 : Collector
3 : Emitter
4 : Collector
Applications
Voltage-resonance type home appliances (Microwave ovens, IH cooking devices, IH rice-cookers)
Maximum Ratings
(Tc = 25°C)
Parameter
Collector-emitter voltage
Gate-emitter voltage
Peak gate-emitter voltage
Collector current
Collector current (Pulse)
Emitter current
Maximum power dissipation
Junction temperature
Storage temperature
Symbol
V
CES
V
GES
V
GEM
I
C
I
CM
I
E
P
C
Tj
Tstg
Ratings
900
±20
±30
60
120
40
200
– 40 to +150
– 40 to +150
Unit
V
V
V
A
A
A
W
°C
°C
Conditions
V
GE
= 0 V
V
CE
= 0 V
V
CE
= 0 V
Tc = 25°C
Rev.1.00, Aug.20.2004, page 1 of 5
CT60AM-18C
Electrical Characteristics
(Unless otherwise specified, Tj = 25°C)
Parameter
Collector-emitter breakdown voltage
Collector-emitter leakage current
Gate-emitter leakage current
Gate-emitter threshold voltage
Collector-emitter saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Tail loss
Tail current
Emitter-collector voltage
Diode reverse recovery time
Thermal resistance (IGBT)
Thermal resistance (Diode)
Notes: 1 Selected value
Symbol
V
(BR)CES
I
CES
I
GES
V
GE(th)
V
CE(sat)
Ciss
Coss
Crss
t
d(on)
t
r
t
d(off)
t
f
Etail
I
tail
V
EC
t
rr
Rth(j-c)
Rth(j-c)
Min.
1000
not
e1
Typ.
—
—
—
4.0
2.0
5000
125
85
0.05
0.12
0.30
0.25
0.6
6
—
0.5
—
—
Max.
—
1
±0.5
6.0
2.7
—
—
—
—
—
—
—
1.0
12
3
2
0.625
4.0
Unit
V
mA
µA
V
V
pF
pF
pF
µs
µs
µs
µs
mJ/pls
A
V
µs
°C/W
°C/W
Test conditions
I
C
= 1 mA, V
GE
= 0 V
V
CE
= 900 V, V
GE
= 0 V
V
GE
=
±20
V, V
CE
= 0 V
I
C
= 6 mA, V
CE
= 10 V
I
C
= 60 A, V
CE
= 15 V
V
CE
= 25 V, V
GE
= 0 V,
f = 1MHz
I
C
= 60 A, Resistive loads,
V
CC
= 300 V, V
GE
= 15 V,
R
G
= 10
Ω
I
CP
= 60 A, Tj = 125°C,
dv/dt = 200 V/µs,
Single-device voltage
resonance circuit
I
E
= 60 A, V
GE
= 0 V
I
E
= 60 A, di/dt = 20 A/µs
Junction to case
Junction to case
—
—
2.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Rev.1.00, Aug.20.2004, page 2 of 5
CT60AM-18C
Performance Curves
Collector-Emitter Saturation Voltage V
CE(sat)
(V)
Collector Current vs.
Collector-Emitter Voltage (Typical)
200
Collector-Emitter Saturation Voltage vs.
Gate-Emitter Voltage (Typical)
5
P
C
= 200W
Tc = 25°C
Pulse Test
Collector Current I
C
(A)
160
4
15V
120
10V
9V
3
I
C
= 120A
60A
30A
15A
80
V
GE
= 20V
2
8V
7V
40
1
0
0
1
2
3
4
5
0
Tc = 25°C
Pulse Test
0
4
8
12
16
20
Collector-Emitter Voltage V
CE
(V)
Collector Current vs.
Gate-Emitter Voltage (Typical)
200
Gate-Emitter Voltage V
GE
(V)
Capacitance vs.
Collector-Emitter Voltage (Typical)
10
4
7
5
3
2
10
3
7
5
3
2
V
CE
= 5V
Pulse Test
Collector Current I
C
(A)
Capacitance C (pF)
160
Cies
120
80
25°C
40
0
0
4
8
12
16
20
Coes
10
2
7
5
Tj = 25°C
3
Cres
2
V
GE
= 0V
f = 1MHz
10
1
3 5 7 10
0
2 3 5 7 10
1
2 3 5 7 10
2
2 3
Gate-Emitter Voltage V
GE
(V)
Collector-Emitter Voltage V
CE
(V)
Switching Time vs.
Gate Resistance (Typical)
Tj = 25°C
2
V
CC
= 300V
V
GE
= 15V
10
3
I
C
= 60A
7
5
3
2
10
2
7
5
3
0
10
2 3
tf
td(off)
tr
Switching Characteristics (Typical)
10
3
7
5
3
Switching Time (ns)
3
2
10
2
7
5
3
2
10
1 0
10
2 3
5 7 10
1
td(off)
tf
tr
td(on)
Tj = 25°C
V
CC
= 300V
V
GE
= 15V
R
G
= 10Ω
2 3
5 7 10
2
Switching Time (ns)
td(on)
5 7 10
1
2 3
5 7 10
2
Collector Current I
C
(A)
Gate Resistance R
G
(Ω)
Rev.1.00, Aug.20.2004, page 3 of 5
CT60AM-18C
Gate-Emitter Voltage vs.
Gate Charge Characteristic (Typical)
20
Emitter Current vs.
Emitter-Collector Voltage (Typical)
80
Gate-Emitter Voltage V
GE
(V)
I
C
= 60A
Tj = 25°C
V
GE
= 0V
Pulse Test
16
Emitter Current I
E
(A)
64
12
V
CE
= 250V
400V
600V
48
8
32
Tc = 25°C
4
16
0
0
80
160
240
320
400
0
0
0.8
1.6
2.4
3.2
4.0
Gate Charge Qg (nC)
Emitter-Collector Voltage V
EC
(V)
Collector-Emitter Breakdown Voltage V
(BR)CES
(t°C)
Collector-Emitter Breakdown Voltage V
(BR)CES
(25°C)
Gate-Emitter Threshold Voltage V
GE(th)
(V)
Gate-Emitter Threshold Voltage vs.
Junction Temperature (Typical)
7.0
Collector-Emitter Breakdown Voltage vs.
Junction Temperature (Typical)
1.4
V
CE
= 400V
I
C
= 20mA
6.0
V
GE
= 0V
I
C
= 1mA
1.2
5.0
1.0
4.0
0.8
3.0
0.6
2.0
–50
0
50
100
150
0.4
–50
0
50
100
150
Junction Temperature Tj (°C)
Junction Temperature Tj (°C)
Transient Thermal Impedance Zth( j – c ) (°C/W)
10
–3
2 3 5 7
10
–2
2 3 5 7
10
–1
2 3 5 7
10
0
2 3 5 7
10
1
10
0
Single pulse
7
5
3
2
2
Transient Thermal Impedance Zth( j – c ) (°C/W)
IGBT Transient Thermal
Impedance Characteristics
Diode Transient Thermal
Impedance Characteristics
10
–3
2 3 5 7
10
–2
2 3 5 7
10
–1
2 3 5 7
10
0
2 3 5 7
10
1
10
1
7
Single pulse
5
3
2
10
0
7
5
3
2
5
3
2
10
–1
7
5
3
2
10
–1
7
5
3
2
10
–1
7
5
3
2
10
–1
7
5
3
2
5 7
10
–5
2 3 5 7
10
–4
2 3 5 7
10
–3
10
–2
5 7
10
–5
2 3 5 7
10
–4
2 3 5 7
10
–3
10
–2
10
–2
10
–2
Pulse Width tw (S)
Pulse Width tw (S)
Rev.1.00, Aug.20.2004, page 4 of 5
CT60AM-18C
Package Dimensions
TO-3PL
EIAJ Package Code
JEDEC Code
Mass (g) (reference value)
9.8
Lead Material
Cu alloy
20.5 max
5
2
φ
3.2
6
2
1
±0.2
20.8
±
0.8
2.5
26
0.6
3
5.45
5.45
Symbol
A
A
1
A
2
b
D
E
e
x
y
y
1
ZD
ZE
Dimension in Millimeters
Min
Typ
Max
4.0
Note 1) The dimensional figures indicate representative values unless
otherwise the tolerance is specified.
Order Code
Lead form
Standard packing
Quantity
Standard order code
Standard order
code example
CT60AM-18C
CT60AM-18C-AD
Straight type
Plastic Magazine (Tube)
25 Type name
Lead form
Plastic Magazine (Tube)
25 Type name – Lead forming code
Note : Please confirm the specification about the shipping in detail.
Rev.1.00, Aug.20.2004, page 5 of 5
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