BT139 series
Triacs
Rev. 04.00 — 6 July 2004
Product data sheet
1. Product profile
1.1 General description
Passivated triacs in a SOT78 plastic package. intended for use in applications requiring
high bidirectional transient and blocking voltage capability.
1.2 Features
s
High thermal cycling performance.
1.3 Applications
s
Motor control
s
Industrial and domestic lighting, heating
and static switching.
1.4 Quick reference data
s
s
s
s
V
DRM
≤
600 V (BT139-600)
V
DRM
≤
600 V (BT139-600F)
V
DRM
≤
800 V (BT139-800)
V
DRM
≤
800 V (BT139-800F)
s
V
DRM
≤
800 V (
BT139-800G
)
s
I
T(RMS)
≤
16 A
s
I
TSM
≤
155 A.
2. Pinning information
Table 1:
Pin
1
2
3
mb
Discrete pinning
Description
main terminal 1
main terminal 2
gate
main terminal 2
mb
Simplified outline
Symbol
T2
sym051
T1
G
1 2 3
SOT78 (TO-220AB)
Philips Semiconductors
BT139 series
Triacs
3. Ordering information
Table 2:
Ordering information
Package
Name
BT139-600
BT139-600F
BT139-800
BT139-800F
BT139-800G
TO-220AB
Description
plastic single-ended package; heatsink mounted; 1 mounting hole;
3-lead TO-220AB
Version
SOT78
Type number
4. Limiting values
Table 3:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DRM
Parameter
repetitive peak off-state voltage
BT139-600
BT139-800
I
T(RMS)
I
TSM
RMS on-state current
non-repetitive peak on-state
current
full sine wave; T
mb
≤
99
°C;
Figure 4
and
Figure 5
full sine wave; T
j
= 25
°C
prior to surge;
Figure 2
and
Figure 3
t = 20 ms
t = 16.7 ms
I
2
t
dI
T
/d
t
I
2
t for fusing
repetitive rate of rise of on-state
current after triggering
t = 10 ms
I
TM
= 20 A; I
G
= 0.2 A;
dI
G
/dt = 0.2 A/µs
T2+ G+
T2+ G−
T2− G−
T2− G+
I
GM
V
GM
P
GM
P
G(AV)
T
stg
T
j
[1]
Conditions
Min
-
-
-
Max
600
[1]
800
16
Unit
V
V
A
-
-
-
155
170
120
A
A
A
2
s
-
-
-
-
-
-
-
50
50
50
10
2
5
5
0.5
+150
125
A/µs
A/µs
A/µs
A/µs
A
V
W
W
°C
°C
peak gate current
peak gate voltage
peak gate power
average gate power
storage temperature
junction temperature
over any 20 ms period
-
−40
-
Although not recommended, off-state voltages up to 800 V may be applied without damage, but the triac may switch to the on-state. The
rate of rise of current should not exceed 15 A/µs.
9397 750 13358
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 04.00 — 6 July 2004
2 of 12
Philips Semiconductors
BT139 series
Triacs
25
P
tot
(W)
20
α
=
180
120
90
15
60
30
10
001aab093
95
T
mb(max)
(°C)
101
107
α
113
5
α
119
0
0
5
10
15
I
T(RMS)
(A)
125
20
α
= conduction angle
Fig 1. Total power dissipation as a function of RMS on-state current; maximum values.
10
3
001aab092
I
TSM
(A)
10
2
(1)
I
T
I
TSM
(2)
T
t
T
j initial
= 25°C max
10
10
−2
10
−1
1
10
T (ms)
10
2
t
p
≤
20 ms.
(1) dI
T
/dt limit.
(2) T2− G+ quadrant.
Fig 2. Non-repetitive peak on-state current as a function of pulse width; maximum values.
9397 750 13358
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 04.00 — 6 July 2004
3 of 12
Philips Semiconductors
BT139 series
Triacs
160
I
TSM
(A)
120
T
I
T
001aab102
I
TSM
t
T
j initial
= 25°C max
80
40
0
1
10
10
2
n
10
3
f = 50 Hz.
Fig 3. Non-repetitive peak on-state current as a function of number of sinusoidal current cycles; maximum
values.
20
I
T(RMS)
(A)
15
001aab091
50
I
T(RMS)
(A)
40
001aab090
(1)
30
10
20
5
10
0
−50
0
50
100
T
mb
(°C)
150
0
10
−2
10
−1
1
10
surge duration (s)
(1) T
mb
= 99
°C.
f = 50 Hz; T
mb
≤
99
°C.
Fig 4. RMS on-state current as a function of mounting
base temperature; maximum values.
Fig 5. RMS on-state current as a function of surge
duration; maximum values.
5. Thermal characteristics
Table 4:
Symbol
R
th(j-mb)
R
th(j-a)
9397 750 13358
Thermal characteristics
Parameter
thermal resistance junction to
mounting base
Conditions
full cycle
Figure 6
half cycle
Figure 6
Typ
-
-
60
Max
1.2
1.7
-
Unit
K/W
K/W
K/W
thermal resistance junction to ambient in free air
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 04.00 — 6 July 2004
4 of 12
Philips Semiconductors
BT139 series
Triacs
10
Z
th(j-mb)
(K/W)
1
(2)
001aab098
(1)
10
−1
P
D
10
−2
t
p
t
10
−3
10
−5
10
−4
10
−3
10
−2
10
−1
1
t
p
(s)
10
(1) Unidirectional.
(2) Bidirectional.
Fig 6. Transient thermal impedance as a function of pulse width.
6. Static characteristics
Table 5:
Static characteristics
T
j
= 25
°
C unless otherwise stated.
Symbol
I
GT
Parameter
gate trigger
current
Conditions
Min
V
D
= 12 V;
I
T
= 0.1 A;
Figure 8
T2+ G+
T2+ G−
T2− G−
T2− G+
I
L
latching current
V
D
= 12 V;
I
GT
= 0.1 A;
Figure 9
T2+ G+
T2+ G−
T2− G−
T2− G+
I
H
holding current
V
D
= 12 V;
I
GT
= 0.1 A;
Figure 10
-
-
-
-
-
7
20
8
10
6
40
60
40
60
45
-
-
-
-
-
7
20
8
10
6
40
60
40
60
45
-
-
-
-
-
7
20
8
10
6
60
90
60
90
60
mA
mA
mA
mA
mA
-
-
-
-
5
8
10
22
35
35
35
70
-
-
-
-
5
8
10
22
25
25
25
70
-
-
-
-
5
8
10
22
50
50
50
100
mA
mA
mA
mA
BT139
Typ
Max
Min
BT139-F
Typ
Max
Min
BT139-G
Typ
Max
Unit
V
T
on-state voltage I
T
= 20 A;
Figure 11
-
1.2
1.6
-
1.2
1.6
-
1.2
1.6
V
9397 750 13358
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 04.00 — 6 July 2004
5 of 12
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