Zener Diodes
MAZ2xxx Series
(MA2xxx Series)
Silicon planar type
Unit: mm
For stabilization of power supply
■
Features
•
High reliability, achieved by the combination the planar type
and the glass seal
•
Large power dissipation P
D
•
Wide voltage range: Zener voltage V
Z
=
5.1 V to 56.0 V
2.6
–0.2
+0.4
Cathode
1st Band
2nd Band
3rd Band
Anode
■
Absolute Maximum Ratings
T
a
=
25°C
Parameter
Repetitive peak forward current
Power dissipation
*1
Symbol
I
FRM
P
D
P
ZSM
T
j
T
stg
Rating
400
1.0
75
200
−55
to
+200
Unit
mA
W
W
°C
°C
DO-41-A1 Package
Non-repetitive reverse surge
power dissipation
*2
Junction temperature
Storage temperature
Note) *1: P
D
=
1.0 W achieved with a printed circuit board
*2: t
=
100
µs,
T
j
=
150°C
■
Common Electrical Characteristics
T
a
=
25°C
±
3°C
*1
Parameter
Forward voltage
Zener voltage
*2
Zener operating resistance
Reverse current
Temperature coefficient of zener voltage
Terminal capacitance
*3
Symbol
V
F
V
Z
R
Z
I
R
S
Z
C
t
Conditions
I
F
=
200 mA
I
Z
I
Z
V
R
I
Z
Specified value
Specified value
Specified value
Specified value
Min
Typ
Max
1.0
φ
0.8
±00.5
27 min.
Colored band
indicatesVz
classification
4.0
±0.5
27 min.
Unit
V
V
Ω
µA
mV/°C
pF
Refer to the list of the
electrical characteristics
within part numbers
V
R
=
0 V, f
=
1 MHz
Specified value
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 5 MHz.
3. *1: The temperature must be controlled 25°C for V
Z
mesurement.
V
Z
value measured at other temperature must be adjusted to V
Z
(25°C)
*2: V
Z
guaranteed 20 ms after current flow.
*3: T
j
=
25°C to 150°C
Note) The part number in the parenthesis shows conventional part number.
Publication date: March 2004
SKE00002CED
1
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of
the products or technical information described in this material and controlled under the "Foreign Exchange
and Foreign Trade Law" is to be exported or taken out of Japan.
(2) The technical information described in this material is limited to showing representative characteristics and
applied circuits examples of the products. It neither warrants non-infringement of intellectual property right
or any other rights owned by our company or a third party, nor grants any license.
(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the technical
information as described in this material.
(4) The products described in this material are intended to be used for standard applications or general elec-
tronic equipment (such as office equipment, communications equipment, measuring instruments and house-
hold appliances).
Consult our sales staff in advance for information on the following applications:
•
Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combus-
tion equipment, life support systems and safety devices) in which exceptional quality and reliability are
required, or if the failure or malfunction of the products may directly jeopardize life or harm the human
body.
•
Any applications other than the standard applications intended.
(5) The products and product specifications described in this material are subject to change without notice for
modification and/or improvement. At the final stage of your design, purchasing, or use of the products,
therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifica-
tions satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rat-
ing, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not
be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of
break down and failure mode, possible to occur to semiconductor products. Measures on the systems such
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