This m aterial and the inform ation herein is the p roperty of Fuji Electric
Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent,
or disclosed in any way whatsoever for the use of any third party nor used
for the manufacturing purp os es w ithout the express w ritten cons ent of
Fuji Electric Device Technolog y C o. ,Ltd.
DATE
CHECKED
Jul.-29-'05
FMW73N20G
SPECIFICATION
Jul.-29-2005
Power MOSFET
MS5F6280
DWG.NO.
CHECKED
Jul.-29-'05
DRAWN
Jul.-29-'05
NAME
Date
Device Name
Type Name
Spec. No.
APPROVED
:
:
:
:
Matsumoto Factory
Fuji Electric Device Technology Co.,Ltd.
MS5F6280
1 / 19
Fuji Electric Device Technology Co.,Ltd.
H04-004-05
This m aterial and the inform ation herein is the p roperty of Fuji Electric
Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent,
or disclosed in any way whatsoever for the use of any third party nor used
for the manufacturing purp os es w ithout the express w ritten cons ent of
Fuji Electric Device Technolog y C o. ,Ltd.
2005
enactment
Date
Jul.-29
Classification
Index
Revised Records
DWG.NO.
Fuji Electric Device Technology Co.,Ltd.
Content
MS5F6280
Drawn Checked Checked Approved
2 / 19
H04-004-03
1.Scope
2.Construction
3.Applications
This specifies Fuji Power MOSFET FMW73N20G
N-Channel enhancement mode power MOSFET
for Switching
4.Type name and Ordering code
Type Name
FMW73N20G
Ordering code
FMW73N20G SC
FMW73N20G SC-K1
5.Outview and Standard packing Specification
Package
Ordering code
Type
FMW73N20G SC
TO-247
FMW73N20G SC-K1
Country code
(Blank)
K1
Packaging
Assembly location
Japan
'Factory A' at Korea
Out view
page 8/19
page 9/19
Standard packing
Specification
MS5Q0006
MS5Q0064
This m aterial and the inform ation herein is the p roperty of Fuji Electric
Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent,
or disclosed in any way whatsoever for the use of any third party nor used
for the manufacturing purp os es w ithout the express w ritten cons ent of
Fuji Electric Device Technolog y C o. ,Ltd.
6.Absolute Maximum Ratings at Tc=25
℃
(unless otherwise specified)
Description
Drain-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Gate-Source Voltage
Repetitive and Non-repetitive
Maximum Avalanche Current
Non-Repetitive
Maximum Avalanche Energy
Repetitive
Maximum Avalanche Energy
Maximum Drain-Source dV/dt
Peak Diode Recovery dV/dt
Maximum Power Dissipation
Operating and Storage
Temperature range
Symbol
V
DS
V
DSX
I
D
I
DP
V
GS
I
AR
E
AS
E
AR
dV
DS
/dt
dV/dt
P
D
T
ch
T
stg
Characteristics
200
200
73
± 292
± 30
73
1115.2
41
20
5
410
2.50
150
-55 to +150
℃
℃
Unit
V
V
A
A
V
A
mJ
mJ
kV/
s
kV/
s
W
Note *1
Note *2
Note *3
VDS
200V
Note *4
Tc=25℃
Ta=25℃
VGS=-30V
Remarks
Fuji Electric Device Technology Co.,Ltd.
MS5F6280
DWG.NO.
3 / 19
H04-004-03
7.Electrical Characteristics at Tc=25℃ (unless otherwise specified)
Static Ratings
Description
Symbol
Conditions
min.
typ.
I
D
=250μA
Drain-Source
Breakdown Voltage BV
DSS
Gate Threshold
Voltage V
GS
(th)
Zero Gate Voltage
Drain Current I
DSS
Gate-Source
Leakage Current I
GSS
Drain-Source
On-State Resistance R
DS
(on)
Forward
Transconductance g
fs
This m aterial and the inform ation herein is the p roperty of Fuji Electric
Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent,
or disclosed in any way whatsoever for the use of any third party nor used
for the manufacturing purp os es w ithout the express w ritten cons ent of
Fuji Electric Device Technolog y C o. ,Ltd.
max.
-
5.0
25
Unit
V
V
V
GS
=0V
I
D
=250
μ
A
V
DS
=V
GS
V
DS
=200V
T
ch
=25℃
V
GS
=0V
V
DS
=160V
T
ch
=125
℃
V
GS
=0V
V
GS
= ± 30V
V
DS
=0V
I
D
=36.5A
V
GS
=10V
I
D
=36.5A
V
DS
=25V
V
DS
=75V
V
GS
=0V
f=1MHz
V
cc
=48V
V
GS
=10V
I
D
=36.5A
R
G
=10Ω
V
cc
=100V
I
D
=73A
V
GS
=10V
200
3.0
-
-
-
-
-
-
μA
250
-
-
12
-
-
-
-
-
-
-
-
-
-
-
29
24
3800
530
35
40
94
60
30
80
30
25
100
36
-
5400
795
52.5
60
141
90
45
120
45
38
nA
mΩ
S
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer
Capacitance Crss
td(on)
Turn-On Time
Turn-Off Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
tr
td(off)
tf
Q
G
Q
GS
Q
GD
pF
ns
nC
Reverse Diode
Description
Symbol
Conditions
I
F
=73A
Diode Forward
V
GS
=0V
T
ch
=25
℃
On-Voltage V
SD
I
F
=73A
Reverse Recovery
Time trr
Reverse Recovery
Charge Qrr
8.Thermal Resistance
Description
Channel to Case
Rth(ch-c)
Channel to Ambient
Rth(ch-a)
V
GS
=0V
-di/dt=100A/μs
T
ch
=25℃
min.
-
-
-
typ.
1.20
300
3.0
max.
1.50
-
-
Unit
V
ns
μ
C
Symbol
min.
typ.
max.
0.305
50
Unit
℃/W
℃
/W
Note *1 : Tch
150 See Fig.1 and Fig.2
C,
Note *2 : Starting Tch=25℃,I
AS
=30A,L=1.98mH,Vcc=48V,R
G
=50Ω,See Fig.1 and Fig.2
E
AS
limited by maximum channel temperature and avalanche current.
See to the 'Avalanche Energy' graph of page 17/18.
Note *3 : Repetitive rating : Pulse width limited by maximum channel temperature.
See to the 'Transient Thermal impedance' graph of page 18/18.
Note *4 : I
F
D
,-di/dt=50A/μs,Vcc
DSS
,Tch
-I
BV
150℃
Fuji Electric Device Technology Co.,Ltd.
MS5F6280
DWG.NO.
4 / 19
H04-004-03
This m aterial and the inform ation herein is the p roperty of Fuji Electric
Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent,
or disclosed in any way whatsoever for the use of any third party nor used
for the manufacturing purp os es w ithout the express w ritten cons ent of
Fuji Electric Device Technolog y C o. ,Ltd.
Fig.1 Test circuit
Fig.2 Operating waveforms
-15V
0
50Ω
+10V
D.U.T
DWG.NO.
Fuji Electric Device Technology Co.,Ltd.
IDP
L
Vcc
BV
DSS
V
GS
MS5F6280
5 / 19
I
D
V
DS
H04-004-03
FPGA/CPLD
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