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5962-3829412MYA

产品描述SRAM, 8KX8, 35ns, CMOS, CQCC32, CERAMIC, LCC-32
产品类别存储    存储   
文件大小147KB,共11页
制造商IDT (Integrated Device Technology)
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5962-3829412MYA概述

SRAM, 8KX8, 35ns, CMOS, CQCC32, CERAMIC, LCC-32

5962-3829412MYA规格参数

参数名称属性值
厂商名称IDT (Integrated Device Technology)
零件包装代码QFJ
包装说明QCCN, LCC32,.45X.55
针数32
Reach Compliance Codeunknown
ECCN代码3A001.A.2.C
最长访问时间35 ns
I/O 类型COMMON
JESD-30 代码R-CQCC-N32
JESD-609代码e0
长度13.97 mm
内存密度65536 bit
内存集成电路类型OTHER SRAM
内存宽度8
功能数量1
端口数量1
端子数量32
字数8192 words
字数代码8000
工作模式ASYNCHRONOUS
最高工作温度125 °C
最低工作温度-55 °C
组织8KX8
输出特性3-STATE
可输出YES
封装主体材料CERAMIC, METAL-SEALED COFIRED
封装代码QCCN
封装等效代码LCC32,.45X.55
封装形状RECTANGULAR
封装形式CHIP CARRIER
并行/串行PARALLEL
电源5 V
认证状态Not Qualified
筛选级别MIL-STD-883
座面最大高度3.048 mm
最大待机电流0.0003 A
最小待机电流2 V
最大压摆率0.11 mA
最大供电电压 (Vsup)5.5 V
最小供电电压 (Vsup)4.5 V
标称供电电压 (Vsup)5 V
表面贴装YES
技术CMOS
温度等级MILITARY
端子面层TIN LEAD
端子形式NO LEAD
端子节距1.27 mm
端子位置QUAD
宽度11.43 mm
Base Number Matches1

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HIGH-SPEED
4K x 8 DUAL-PORT
STATIC SRAM
Features
High-speed access
– Military: 25/35/45/55/70ns (max.)
– Industrial: 55ns (max.)
– Commercial: 20/25/35/45/55/70ns (max.)
Low-power operation
– IDT7134SA
Active: 700mW (typ.)
Standby: 5mW (typ.)
– IDT7134LA
Active: 700mW (typ.)
Standby: 1mW (typ.)
Fully asynchronous operation from either port
Battery backup operation—2V data retention
TTL-compatible; single 5V (±10%) power supply
Available in 48-pin DIP, LCC, Flatpack and 52-pin PLCC
Military product compliant to MIL-PRF-38535 QML
Industrial temperature range (–40°C to +85°C) is available for
selected speeds
IDT7134SA/LA
Description
x
x
x
x
x
x
x
x
The IDT7134 is a high-speed 4K x 8 Dual-Port Static RAM
designed to be used in systems where on-chip hardware port arbitration
is not needed. This part lends itself to those systems which cannot
tolerate wait states or are designed to be able to externally arbitrate or
withstand contention when both sides simultaneously access the
same Dual-Port RAM location.
The IDT7134 provides two independent ports with separate control,
address, and I/O pins that permit independent, asynchronous access
for reads or writes to any location in memory. It is the user’s responsibility
to ensure data integrity when simultaneously accessing the same
memory location from both ports. An automatic power down feature,
controlled by
CE,
permits the on-chip circuitry of each port to enter a
very low standby power mode.
Fabricated using IDT’s CMOS high-performance technology, these
Dual-Port typically operate on only 700mW of power. Low-power (LA)
versions offer battery backup data retention capability, with each port
typically consuming 200µW from a 2V battery.
The IDT7134 is packaged on either a sidebraze or plastic 48-pin
DIP, 48-pin LCC, 52-pin PLCC and 48-pin Flatpack. Military grade
product is manufactured in compliance with the latest revision of MIL-
PRF-38535 QML, making it ideally suited to military temperature
applications demanding the highest level of performance and reliability.
Functional Block Diagram
R/W
L
CE
L
R/W
R
CE
R
OE
L
I/O
0L
- I/O
7L
COLUMN
I/O
COLUMN
I/O
OE
R
I/O
0R
- I/O
7R
A
0L
- A
11L
LEFT SIDE
ADDRESS
DECODE
LOGIC
MEMORY
ARRAY
RIGHT SIDE
ADDRESS
DECODE
LOGIC
A
0R
- A
11R
2720 drw 01
JUNE 1999
1
DSC-2720/9
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