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MB84VA2107: 产品描述16M (x16) FLASH MEMORY & 1M (x 8) STATIC RAM; 文件大小179KB，共29页; 制造商FUJITSU(富士通); 官网地址http://edevice.fujitsu.com/fmd/en/index.html

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MB84VA2107概述

16M (x16) FLASH MEMORY & 1M (x 8) STATIC RAM

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FUJITSU SEMICONDUCTOR

DATA SHEET

DS05-50109-1E

MCP (Multi-Chip Package) FLASH MEMORY & SRAM

CMOS

16M (×16) FLASH MEMORY &

1M (× 8) STATIC RAM

MB84VA2106

-10

/MB84VA2107

-10

FEATURES

• Power supply voltage of 2.7 to 3.6 V

• High performance

100 ns maximum access time

• Operating Temperature

–20 to +85°C

— FLASH MEMORY

• Minimum 100,000 write/erase cycles

• Sector erase architecture

One 8 K word, two 4 K words, one 16 K word, and thirty one 32 K words.

Any combination of sectors can be concurrently erased. Also supports full chip erase.

• Boot Code Sector Architecture

MB84VA2106: Top sector

MB84VA2107: Bottom sector

• Embedded Erase

Algorithms

Automatically pre-programs and erases the chip or any sector

• Embedded Program

Algorithms

Automatically writes and verifies data at specified address

• Data Polling and Toggle Bit feature for detection of program or erase cycle completion

• Ready-Busy output (RY/BY)

Hardware method for detection of program or erase cycle completion

• Automatic sleep mode

When addresses remain stable, automatically switch themselves to low power mode.

• Low V

write inhibit

≤

2.5 V

• Erase Suspend/Resume

Suspends the erase operation to allow a read in another sector within the same device

Please refer to "MBM29LV160T/B" data sheet in detailed function

— SRAM

• Power dissipation

Operating : 35 mA max.

Standby : 30

µA

max.

• Power down features using CE1s and CE2s

• Data retention supply voltage: 2.0 V to 3.6 V

Embedded Erase

and Embedded Program

are trademarks of Advanced Micro Devices, Inc.

MB84VA2107相似产品对比

	MB84VA2107	MB84VA2107-10	MB84VA2106-10
描述	16M (x16) FLASH MEMORY & 1M (x 8) STATIC RAM	16M (x16) FLASH MEMORY & 1M (x 8) STATIC RAM	16M (x16) FLASH MEMORY & 1M (x 8) STATIC RAM
是否Rohs认证	-	不符合	不符合
厂商名称	-	FUJITSU(富士通)	FUJITSU(富士通)
包装说明	-	LBGA, BGA48,6X8,40	LBGA, BGA48,6X8,40
Reach Compliance Code	-	compli	compli
最长访问时间	-	100 ns	100 ns
其他特性	-	SRAM IS ORGANISED AS 128K X 8	SRAM IS ORGANISED AS 128K X 8
JESD-30 代码	-	R-PBGA-B48	R-PBGA-B48
JESD-609代码	-	e0	e0
长度	-	14 mm	14 mm
内存密度	-	16777216 bi	16777216 bi
内存集成电路类型	-	MEMORY CIRCUIT	MEMORY CIRCUIT
内存宽度	-	16	16
混合内存类型	-	FLASH+SRAM	FLASH+SRAM
功能数量	-	1	1
端子数量	-	48	48
字数	-	1048576 words	1048576 words
字数代码	-	1000000	1000000
工作模式	-	ASYNCHRONOUS	ASYNCHRONOUS
最高工作温度	-	85 °C	85 °C
最低工作温度	-	-20 °C	-20 °C
组织	-	1MX16	1MX16
封装主体材料	-	PLASTIC/EPOXY	PLASTIC/EPOXY
封装代码	-	LBGA	LBGA
封装等效代码	-	BGA48,6X8,40	BGA48,6X8,40
封装形状	-	RECTANGULAR	RECTANGULAR
封装形式	-	GRID ARRAY, LOW PROFILE	GRID ARRAY, LOW PROFILE
峰值回流温度（摄氏度）	-	NOT SPECIFIED	NOT SPECIFIED
电源	-	3/3.3 V	3/3.3 V
认证状态	-	Not Qualified	Not Qualified
座面最大高度	-	1.6 mm	1.6 mm
最大待机电流	-	0.00003 A	0.00003 A
最大压摆率	-	0.04 mA	0.04 mA
最大供电电压 (Vsup)	-	3.6 V	3.6 V
最小供电电压 (Vsup)	-	2.7 V	2.7 V
表面贴装	-	YES	YES
技术	-	CMOS	CMOS
温度等级	-	OTHER	OTHER
端子面层	-	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
端子形式	-	BALL	BALL
端子节距	-	1 mm	1 mm
端子位置	-	BOTTOM	BOTTOM
处于峰值回流温度下的最长时间	-	NOT SPECIFIED	NOT SPECIFIED
宽度	-	10 mm	10 mm

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