Bulletin I27128 Rev.C 07/03
19MT050XF
"FULL-BRIDGE" FREDFET MTP
Features
Low On-Resistance
High Performance Optimised Built-in Fast
Recovery Diodes
Fully Characterized Capacitance and
Avalanche Voltage and Current
Aluminum Nitride DBC
Very Low Stray Inductance Design for
High Speed Operation
HEXFET
®
Power MOSFET
31 A
V
DSS
= 500V
Benefits
Low Gate Charge Qg results in Simple
Drive Requirement
Improved Gate, Avalanche and Dynamic
dv/dt Ruggedness
Low Trr and Soft Diode Reverse Recovery
Optimized for Welding, UPS and SMPS
Applications
Outstanding ZVS and High Frequency
Operation
Direct Mounting to Heatsink
PCB Solderable Terminals
Very Low Junction-to-Case Thermal Resistance
UL Approved E78996
MMTP
Absolute Maximum Ratings
Parameters
I
D
I
DM
P
D
V
GS
V
ISOL
dv/dt
Continuos Drain Current @ V
GS
= 10V
Pulsed Drain Current
Maximum Power Dissipation
Gate-to-Source Voltage
RMS Isolation Voltage, Any Terminal to Case, t = 1 min
Peak Diode Recovery dv/dt
(3)
(1)
@ T
C
= 25°C
@ T
C
= 100°C
@ T
C
= 25°C
@ T
C
= 100°C
Max
31
19
124
1140
456
± 30
2500
15
Units
A
W
V
V/ ns
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19MT050XF
Bulletin I27128 Rev.C 07/03
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameters
V
(BR)DSS
∆V
(BR)DSS
/
∆T
J
R
DS(ON)
V
GS(th)
I
DSS
I
GSS
Drain-to-Source Breakdown Voltage
Temperature Coeff. of
Breakdown Voltage
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current (6)
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Min Typ Max Units Test Conditions
500
0.48
0.19
0.21
3.0
0.22
0.25
6.0
50
2
150
- 150
V
V
GS
= 0V, I
D
= 250µA
V/°C I
D
= 4mA, reference to T
J
= 25°C
Ω
V
µA
mA
nA
V
GS
= 10V, I
D
= 19A
V
GS
= 10V, I
D
= 31A
V
DS
= V
GS
, I
D
= 250µA
V
DS
=
V
DS
=
V
GS
=
V
GS
=
500V, V
GS
= 0V
400V, V
GS
= 0V, T
J
= 125°C
30V
- 30V
(4)
Dynamic Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameters
g
fs
Q
g
Q
gs
Q
gd
t
d(on)
t
d(off)
t
r
t
f
C
iss
C
oss
C
rss
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-on Delay Time
Turn-off Delay Time
Rise Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min Typ Max Units Test Conditions
26
105
36
46
49
80
165
76
4808
1165
40
160
55
70
74
120
250
115
7210
1750
60
S
nC
V
DS
= 50V, I
D
= 19A
I
D
= 31A
V
DS
= 400V
V
GS
= 10V
I
D
= 31A
V
DS
= 250V
V
GS
= 10V
R
G
= 4.3Ω
V
GS
= 0V
V
DS
= 25V
f = 1.0 MHz
(4)
ns
pF
Diode Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameters
I
S
I
SM
V
SD
t
rr
Q
rr
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
(1)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
1.01
252
1619
Min Typ Max Units Test Conditions
31
124
1.1
378
2428
V
ns
nC
A
MOSFET symbol
showing the
integral reverse
D
G
S
p-n junction diode
T
J
= 25°C, I
S
= 31A, V
GS
= 0V
T
J
= 125°C, I
F
= 31A
di/dt = 100A/µs
(4)
(4)
2
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19MT050XF
Bulletin I27128 Rev.C 07/03
Avalanche Characteristics
Parameters
E
AS
I
AR
E
AR
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
(2)
(1)
(1)
Min
Typ
Max
493
31
114
Units
mJ
A
mJ
Thermal- Mechanical Specifications
Parameters
T
J
T
STG
R
thJC
R
thCS
Operating Junction Temperature Range
Storage Temperature Range
Junction-to-Case (per
MOSFET
)
Case-to-Sink
(Heatsink Compound Thermal Conductivity = 1 W/mK)
Min
- 40
- 40
Typ
Max
150
125
0.44
Units
°C
°C/ W
0.06
(
external shortest distance in air
5.5
8
66
g
mm
Clearance
Creepage
(5)
between two terminals)
(
shortest distance along external
surface of the insulating material between 2 terminals
)
Weight
Notes:
(1) Repetitive rating; pulse width limited by
max. junction temperature
(2) Starting T
J
= 25°C, L = 1.0mH, R
G
= 25Ω
I
AS
= 31A
(5)
(3) I
SD
≤
31A, di/dt
≤
340 A/µs, V
DD
≤
V
(BR)DSS
,
T
J
≤
150°C
(4) Pulse width
≤
400µs; duty cycle
≤
2%
(5) Standard version only i.e. without optional thermistor
(6) I
CES
includes also opposite leg overall leakage
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19MT050XF
Bulletin I27128 Rev.C 07/03
1000
ID, Drain-to-Source Current (A)
100
ID, Drain-to-Source Current (A)
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
BOTTOM 5.0V
TOP
100
10
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
BOTTOM 5.0V
TOP
10
1
1
5.0V
5.0V
0.1
20µs PULSE WIDTH
Tj = 25°C
0.01
0.1
1
10
100
0.1
0.1
1
20µs PULSE WIDTH
Tj = 150°C
10
100
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
1000
2.5
R DS(on) , Drain-to-Source On Resistance
ID = 31A
VGS = 10V
2.0
ID, Drain-to-Source Current
(
A)
100
10
T J = 150°C
(Normalized)
1.5
1
T J = 25°C
VDS = 50V
20µs PULSE WIDTH
4.0
5.0
6.0
7.0
8.0
9.0
1.0
0
0.5
-60 -40 -20
0
20
40
60
80 100 120 140 160
VGS , Gate-to-Source Voltage (V)
T J , Junction Temperature (°C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
4
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19MT050XF
Bulletin I27128 Rev.C 07/03
100000
10000
Coss = Cds + Cgd
VGS , Gate-to-Source Voltage (V)
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, C ds SHORTED
Crss = Cgd
16
ID= 31A
VDS= 400V
VDS= 250V
VDS= 100V
12
C, Capacitance (pF)
Ciss
1000
8
Coss
100
4
FOR TEST CIRCUIT
SEE FIGURE 13
Crss
10
1
10
100
1000
0
0
40
80
120
160
VDS, Drain-to-Source Voltage (V)
Q G Total Gate Charge (nC)
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
1000.0
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100
100.0
T J = 150°C
10.0
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
10
100µsec
1msec
1
Tc = 25°C
Tj = 150°C
Single Pulse
1
10
100
10msec
1.0
T J = 25°C
0.1
0.2
0.4
0.6
0.8
1.0
VGS = 0V
0.1
1.2
1.4
VSD, Source-toDrain Voltage (V)
1000
10000
VDS , Drain-toSource Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
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