FUJITSU SEMICONDUCTOR
DATA SHEET
DS05-13104-1E
Memory FRAM
CMOS
1 M Bit (64 K×16)
MB85R1002
■
DESCRIPTIONS
The MB85R1002 is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 65,536 words x
16 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile
memory cells.
Unlike SRAM, MB85R1002 is able to retain data without back-up battery.
The memory cells used for the MB85R1002 has improved at least 10
10
times of read/write access, significantly
outperforming FLASH memory and E
2
PROM in endurance.
The MB85R1002 uses a pseudo - SRAM interface compatible with conventional asynchronous SRAM.
■
FEATURES
•
•
•
•
•
•
Bit configuration : 65,536 words x 16 bits
Read/write endurance : 10
10
times
Operating power supply voltage : 3.0 V to 3.6 V
Operating temperature range : -20 °C to +85 °C
LB and UB data byte control
48-pin, TSOP(1) plastic package
■
PACKAGE
48-pin plastic TSOP(1)
(FPT-48P-M25)
MB85R1002
■
PIN ASSIGNMENT
(
TOP VIEW
)
A15
A14
A13
A12
A11
A10
A9
A8
N.C.
N.C.
WE
CE2
GND
UB
LB
VCC
N.C.
A7
A6
A5
A4
A3
A2
A1
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
N.C.
N.C.
GND
I/O16
I/O8
I/O15
I/O7
I/O14
I/O6
I/O13
I/O5
VCC
I/O12
I/O4
I/O11
I/O3
I/O10
I/O2
I/O9
I/O1
OE
GND
CE1
A0
(FPT-48P-M25)
■
PIN DESCRIPTION
Pin name
A0 to A15
I/O1 to I/O16
CE1
CE2
WE
OE
LB, UB
VCC
GND
Adderss In
Data Input/Output
Chip Enable 1 in
Chip Enable 2 in
Write Enable in
Output Enable in
Data Byte Control in
Power Supply
Ground
Function
2
MB85R1002
■
BLOCK DIAGRAM
A0
to
·
·
·
Address Latch.
Row Dec.
Ferro Capacitor Cell
A15
Column Dec.
intCE2
S/A
CE2
intCEB
LB
UB
WE
OE
CE1
intCEB
·
·
intCE2
intOE
intWE
intCE2
I/O1
to
I/O8 I/O9
to
I/O16
I/O16
·
·
to
I/O9
I/O8
to
I/O1
3
MB85R1002
■
FUNCTION TRUTH TABLE
Mode
CE1
CE2
WE
OE
LB
UB
I/O
1
to I/O
8
I/O
9
to I/O
16
Supply Current
H
Standby Pre-charge
X
X
X
Read
X
L
X
X
H
X
X
H
X
H
X
X
H
X
L
X
X
X
H
L
L
H
L
X
X
X
H
L
H
L
L
H
L
L
H
L
L
H
L
X
Dout
Dout
High-Z
Dout
Dout
High-Z
Din
Din
High-Z
Din
Din
High-Z
High-Z
Dout
High-Z
Dout
Dout
High-Z
Dout
Din
High-Z
Din
Din
High-Z
Din
High-Z
Operation
(I
CC
)
High-Z
High-Z
Standby
(I
SB
)
L
Read
(Pseudo-SRAM,
OE control)
L
H
H
L
H
L
Write
H
L
L
X
L
H
L
Write
(Pseudo-SRAM,
WE control)
Output Disable
L
L
H
H
H
H
H
L
H
X
Notes : L = V
IL
, H = V
IH
, X can be either V
IL
or V
IH
, High-Z = High Impedance
: Latch address at falling edge,
: Latch address at rising edge
4
MB85R1002
■
ABSOLUTE MAXIMUM RATINGS
Parameter
Supply Voltage
Input Voltage
Output Voltage
Ambient Operating Temperature
Storage Temperature
Symbol
V
CC
V
IN
V
OUT
T
A
T
stg
Rating
Min
−0.5
−0.5
−0.5
−20
−40
Max
+4.0
V
CC
+
0.5
V
CC
+
0.5
+85
+125
Unit
V
V
V
o
o
C
C
WARNING: Semiconductor devices can be permanently damaged by application of stress (voltage, current,
temperature, etc.) in excess of absolute maximum ratings. Do not exceed these ratings.
■
RECOMMENDED OPERATING CONDITIONS
(V
CC
= 3.0 V to 3.6 V, T
A
=
−20
o
C to
+85
o
C)
Value
Unit
Typ
Max
3.3
⎯
⎯
⎯
3.6
V
CC
+
0.5
+0.6
+85
V
V
V
o
Parameter
Supply Voltage
Input Voltage (high)
Input Voltage (low)
Ambient Operating Temperature
Symbol
V
CC
V
IH
V
IL
T
A
Min
3.0
V
CC
x 0.8
−0.5
−
20
C
WARNING: The recommended operating conditions are required in order to ensure the normal operation of the
semiconductor device. All of the device’s electrical characteristics are warranted when the device is
operated within these ranges.
Always use semiconductor devices within their recommended operating condition ranges. Operation
outside these ranges may adversely affect reliability and could result in device failure.
No warranty is made with respect to uses, operating conditions, or combinations not represented on
the data sheet. Users considering application outside the listed conditions are advised to contact their
FUJITSU representatives beforehand.
5
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