SM572648578E83R
September 25, 2001
Revision History
• September 25, 2001
Modified Input Capacitance on page 5.
• July 12, 2001
Modified AC Characteristics (t
RCD
) on page 7.
Modified Ordering Information (Cycle Time) on page 16.
• April 23, 2001
Modified datasheet.
• March 21, 2001
Modified physical dimensions on page 11.
• December 5, 2000
Datasheet released.
C
orporate Headquarters:
P. O. Box 1757, Fremont, CA 94538, USA • Tel:(510) 623-1231 • Fax:(510) 623-1434 • E-mail: info@smartm.com
Europe:
5 Kelvin Park South, Kelvin South, East Kilbride, G75 ORH, United Kingdom • Tel: +44-870-870-8747 • Fax: +44-870-870-8757
Asia/Pacific:
Plot 18 Lrg Jelawat 4 Kawasan Perindustrian Seberang Jaya 13700 Prai Penang Malaysia • Tel: +604-3992909 • Fax: +604-3992903
SM572648578E83R
September 25, 2001
512MByte (64M x 72) SDRAM Module - 64Mx8 based (Stacked - two 32Mx8)
168-pin DIMM, Registered, ECC
Features
•
•
•
•
Standard
Configuration
Cycle Time
CAS# Latency
:
:
:
:
PC133
ECC
7.5ns
Device = 3
Module = 4
1, 2, 4, 8 or Page
Linear/Interleave
4
•
•
•
•
•
•
•
Operating Voltage :
3.3V
Refresh
:
8K / 64ms
Device Physicals
:
Stacked
Lead Finish
:
Gold
Length x Height
:
133.35mm x 28.575mm
No. of sides
:
Double-sided
Mating Connector (Examples)
Vertical
:
AMP-390074-6
• Burst Length
:
• Burst Type
:
• No. of Internal
Banks per SDRAM :
Functional Diagram
REGE
DQMB0~DQMB7
S0#~S3#
R
E
G
I
S
T
E
R
S
RDQMB0~RDQMB7
RS0#~RS3#
RS0#
RS1#
RAS#
CAS#
WE#
CKE0
64Mx24
Block
RS2#
64Mx16 RS3#
Block
64Mx16
Block
64Mx16
Block
CB0~CB7
DQ0~DQ15
PCK0
PLL
Clock
Buffer
Feedback
DQ32~DQ47
DQ16~DQ31
DQ48~DQ63
DQ0~DQ63, CB0~CB7
PCK6
PCK1~PCK5
(To all SDRAMs)
CK0
Notes :
1.
A0~A12, BA0 and BA1 to all SDRAMs through registers.
A0~A2
SA0~SA2
2.
REGE, when asserted active high the buffer-register operates in
SDA
SCL
SDA
SCL
register mode, when deasserted inactive low the buffer-register
WP
WP
operates in “real-time” buffer mode. REGE has a pull-up of 10K
Ω
.
3.
Each 64Mx16 Block comprises of four 32x8 SDRAMs and each
SERIAL PD
64Mx24 Block comprises of six 32x8 SDRAMs.
EEPROM
4.
Registers Block comprises of two registers.
5.
Data is terminated using 10
Ω
series resistors.
V
DD
V
SS
6.
For RDQMB control see note on page 3.
7.
CK signals are terminated with series resistors and/or padding
capacitors depending on load per clock.
Decoupling capacitors
8.
WP signal has a pull-down of 47K
Ω
.
to all devices.
( All specifications of this device are subject to change without notice.)
C
orporate Headquarters:
P. O. Box 1757, Fremont, CA 94538, USA • Tel:(510) 623-1231 • Fax:(510) 623-1434 • E-mail: info@smartm.com
Europe:
5 Kelvin Park South, Kelvin South, East Kilbride, G75 ORH, United Kingdom • Tel: +44-870-870-8747 • Fax: +44-870-870-8757
Asia/Pacific:
Plot 18 Lrg Jelawat 4 Kawasan Perindustrian Seberang Jaya 13700 Prai Penang Malaysia • Tel: +604-3992909 • Fax: +604-3992903
SM572648578E83R
September 25, 2001
Pin Name
A0~A12
A0~A9
BA0, BA1
DQ0~DQ63, CB0~CB7
CK0~CK3
RAS#
CAS#
CKE0
DQMB0~DQMB7
S0#~S3#
Row Addresses
Column Addresses
Bank Select Address
Data Inputs/Outputs
Clock Inputs
Row Address Strobes
Column Address Strobes
Clock Enable
DQ Mask Enables
Chip Selects
WE#
REGE
SA0~SA2
SDA
SCL
WP
V
DD
V
SS
NC
Write Enable
Register Enable
Decode Inputs
Serial Data Input/Output
Serial Clock
Serial EEPROM Write Protect
Power Supply
Ground
No Connection
Note:
RDQMs v/s Data I/Os
RDQMB0 controls DQ0~DQ7
RDQMB1 controls DQ8~DQ15
CB0~CB7
RDQMB2 controls DQ16~DQ23
RDQMB3 controls DQ24~DQ31
RDQMB4 controls DQ32~DQ39
RDQMB5 controls DQ40~DQ47
RDQMB6 controls DQ48~DQ55
RDQMB7 controls DQ56~DQ63
Pin
No.
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
Pin
Designation
V
SS
DQ0
DQ1
DQ2
DQ3
V
DD
DQ4
DQ5
DQ6
DQ7
DQ8
V
SS
DQ9
DQ10
DQ11
DQ12
DQ13
V
DD
DQ14
DQ15
CB0
CB1
V
SS
NC
NC
V
DD
WE#
DQMB0
DQMB1
S0#
NC
V
SS
A0
A2
A4
A6
A8
A10/AP (Note*)
BA1
V
DD
V
DD
CK0
Pin
No.
43
44
45
46
47
48
49
50
51
52
53
54
55
56
57
58
59
60
61
62
63
64
65
66
67
68
69
70
71
72
73
74
75
76
77
78
79
80
81
82
83
84
Pin
Designation
V
SS
NC
S2#
DQMB2
DQMB3
NC
V
DD
NC
NC
CB2
CB3
V
SS
DQ16
DQ17
DQ18
DQ19
V
DD
DQ20
NC
NC
NC
V
SS
DQ21
DQ22
DQ23
V
SS
DQ24
DQ25
DQ26
DQ27
V
DD
DQ28
DQ29
DQ30
DQ31
V
SS
CK2
NC
WP
SDA
SCL
V
DD
Pin
No.
85
86
87
88
89
90
91
92
93
94
95
96
97
98
99
100
101
102
103
104
105
106
107
108
109
110
111
112
113
114
115
116
117
118
119
120
121
122
123
124
125
126
Pin
Designation
V
SS
DQ32
DQ33
DQ34
DQ35
V
DD
DQ36
DQ37
DQ38
DQ39
DQ40
V
SS
DQ41
DQ42
DQ43
DQ44
DQ45
V
DD
DQ46
DQ47
CB4
CB5
V
SS
NC
NC
V
DD
CAS#
DQMB4
DQMB5
NC
RAS#
V
SS
A1
A3
A5
A7
A9
BA0
A11
V
DD
CK1
A12
Pin
No.
127
128
129
130
131
132
133
134
135
136
137
138
139
140
141
142
143
144
145
146
147
148
149
150
151
152
153
154
155
156
157
158
159
160
161
162
163
164
165
166
167
168
Pin
Designation
V
SS
CKE0
NC
DQMB6
DQMB7
NC
V
DD
NC
NC
CB6
CB7
V
SS
DQ48
DQ49
DQ50
DQ51
V
DD
DQ52
NC
NC
REGE
V
SS
DQ53
DQ54
DQ55
V
SS
DQ56
DQ57
DQ58
DQ59
V
DD
DQ60
DQ61
DQ62
DQ63
V
SS
CK3
NC
SA0
SA1
SA2
V
DD
CK1~CK3
: Terminated.
Note* :
A10/AP initiates Auto-precharge.
C
orporate Headquarters:
P. O. Box 1757, Fremont, CA 94538, USA • Tel:(510) 623-1231 • Fax:(510) 623-1434 • E-mail: info@smartm.com
Europe:
5 Kelvin Park South, Kelvin South, East Kilbride, G75 ORH, United Kingdom • Tel: +44-870-870-8747 • Fax: +44-870-870-8757
Asia/Pacific:
Plot 18 Lrg Jelawat 4 Kawasan Perindustrian Seberang Jaya 13700 Prai Penang Malaysia • Tel: +604-3992909 • Fax: +604-3992903
SM572648578E83R
September 25, 2001
DC Characteristics
Absolute Maximum Ratings
Parameter
Voltage on any pin relative to V
SS
Voltage on supply pins relative to V
SS
Power Dissipation
Operating Temperature
Storage Temperature
Short Circuit Output Current
Symbol
V
IN,
V
OUT
V
DDT
P
T
T
opr
T
stg
I
OS
Ratings
- 1.0 to 4.6
- 1.0 to 4.6
18
0 to +70
- 55 to +150
50
Unit
V
V
W
°
C
°
C
mA
Recommended DC Operating Conditions
(T
A
= 0 to +70
°
C)
Parameter
Supply Voltage
Ground
Input High Voltage
Input Low Voltage
Symbol
V
DD
V
SS
V
IH
V
IL
Min
3.0
0
2.0
-0.3
Typ
3.3
0
3.0
0
Max
3.6
0
V
DD
+0.3V
0.8
V
Unit
V
V
C
orporate Headquarters:
P. O. Box 1757, Fremont, CA 94538, USA • Tel:(510) 623-1231 • Fax:(510) 623-1434 • E-mail: info@smartm.com
Europe:
5 Kelvin Park South, Kelvin South, East Kilbride, G75 ORH, United Kingdom • Tel: +44-870-870-8747 • Fax: +44-870-870-8757
Asia/Pacific:
Plot 18 Lrg Jelawat 4 Kawasan Perindustrian Seberang Jaya 13700 Prai Penang Malaysia • Tel: +604-3992909 • Fax: +604-3992903
SM572648578E83R
September 25, 2001
DC Characteristics (cont’d)
Capacitance
(V
DD
= 3.3V±0.3V, T
A
= +25°C, f = 1MHz)
Parameter
Input Capacitance (All signals except Data, CKs)
Input Capacitance (CK0~CK3)
Input/Output Capacitance (DQ0~DQ63, CB0~CB7)
Notes : Capacitance is sampled per Mil-Std-883.
Symbol
C
I1
C
I2
C
I/O
Max
18
14
17
Unit
pF
pF
pF
(V
DD
= 3.3V±0.3V, V
SS
= 0V, T
A
= 0 to +70 °C)
Parameter
Input Leakage Current*
Output Leakage Current
Output High Voltage
Output Low Voltage
Symbol
I
LI
I
LO
V
OH
V
OL
Test Conditions
0V
≤
V
in
≤
V
DD
+0.3V
0V
≤
V
out
≤
V
DD
D
out
= Disable
High I
out
= -2mA
Low I
out
= 2mA
2.4
-
-
0.4
V
V
Min
-18
-27
7.5ns
Max
18
27
Unit
µA
µA
*Note : Except for REGE (0.33mA) and WP (0.07mA) pins.
C
orporate Headquarters:
P. O. Box 1757, Fremont, CA 94538, USA • Tel:(510) 623-1231 • Fax:(510) 623-1434 • E-mail: info@smartm.com
Europe:
5 Kelvin Park South, Kelvin South, East Kilbride, G75 ORH, United Kingdom • Tel: +44-870-870-8747 • Fax: +44-870-870-8757
Asia/Pacific:
Plot 18 Lrg Jelawat 4 Kawasan Perindustrian Seberang Jaya 13700 Prai Penang Malaysia • Tel: +604-3992909 • Fax: +604-3992903
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