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IS62VV25616LL-85T: 产品描述Standard SRAM, 256KX16, 85ns, CMOS, PDSO44, TSOP2-44; 产品类别存储存储; 文件大小52KB，共10页; 制造商Integrated Silicon Solution ( ISSI )

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IS62VV25616LL-85T概述

Standard SRAM, 256KX16, 85ns, CMOS, PDSO44, TSOP2-44

IS62VV25616LL-85T规格参数

参数名称	属性值
是否无铅	含铅
是否Rohs认证	不符合
厂商名称	Integrated Silicon Solution ( ISSI )
零件包装代码	TSOP2
包装说明	TSOP2-44
针数	44
Reach Compliance Code	compliant
ECCN代码	3A991.B.2.A
最长访问时间	85 ns
I/O 类型	COMMON
JESD-30 代码	R-PDSO-G44
JESD-609代码	e0
长度	18.41 mm
内存密度	4194304 bit
内存集成电路类型	STANDARD SRAM
内存宽度	16
功能数量	1
端子数量	44
字数	262144 words
字数代码	256000
工作模式	ASYNCHRONOUS
最高工作温度	70 °C
最低工作温度
组织	256KX16
输出特性	3-STATE
封装主体材料	PLASTIC/EPOXY
封装代码	TSOP2
封装等效代码	TSOP44,.46,32
封装形状	RECTANGULAR
封装形式	SMALL OUTLINE, THIN PROFILE
并行/串行	PARALLEL
峰值回流温度（摄氏度）	NOT SPECIFIED
电源	1.8 V
认证状态	Not Qualified
座面最大高度	1.2 mm
最大待机电流	0.000005 A
最小待机电流	1 V
最大压摆率	0.015 mA
最大供电电压 (Vsup)	2.25 V
最小供电电压 (Vsup)	1.7 V
标称供电电压 (Vsup)	1.8 V
表面贴装	YES
技术	CMOS
温度等级	COMMERCIAL
端子面层	Tin/Lead (Sn/Pb)
端子形式	GULL WING
端子节距	0.8 mm
端子位置	DUAL
处于峰值回流温度下的最长时间	NOT SPECIFIED
宽度	10.16 mm
Base Number Matches	1

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IS62VV25616LL

256K x 16 LOW VOLTAGE, 1.8V ULTRA

LOW POWER CMOS STATIC RAM

FEATURES

• High-speed access time: 70, 85, ns

• CMOS low power operation

– 36 mW (typical) operating

– 9 µW (typical) CMOS standby

• Single 1.7V- 2.25 V

power supply

• Fully static operation: no clock or refresh

required

• Three state outputs

• Data control for upper and lower bytes

• Industrial temperature available

• Available in the 44-pin TSOP (Type II) and

48-pin mini BGA (7.2mm x 8.7mm)

ISSI

AUGUST 2002

DESCRIPTION

The

ISSI

IS62VV25616LL is a high-speed, 4,194,304 bit

static RAMs organized as 262,144 words by 16 bits. They

are fabricated using

ISSI

's high-performance CMOS

technology. This highly reliable process coupled with

innovative circuit design techniques, yields high-

performance and low power consumption devices.

For the IS62VV25616LL, when

is HIGH (deselected)

is low and both

and

are HIGH, the device

assumes a standby mode at which the power dissipation

can be reduced down with CMOS input levels.

Easy memory expansion is provided by using Chip Enable

and Output Enable inputs,

and

OE.

The active LOW

Write Enable (WE) controls both writing and reading of the

memory. A data byte allows Upper Byte (UB) and Lower

Byte (LB) access.

The IS62VV25616LL is packaged in the JEDEC standard

44-pin TSOP (Type II) and 48-pin mini BGA (7.2mm x 8.7mm).

FUNCTIONAL BLOCK DIAGRAM

A0-A17

DECODER

256K x 16

MEMORY ARRAY

GND

I/O0-I/O7

Lower Byte

I/O8-I/O15

Upper Byte

I/O

DATA

CIRCUIT

COLUMN I/O

CONTROL

CIRCUIT

Copyright © 2002 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability

arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any

published information and before placing orders for products.

Integrated Silicon Solution, Inc. — www.issi.com —

1-800-379-4774

Rev. B

08/07/02

IS62VV25616LL-85T相似产品对比

	IS62VV25616LL-85T	IS62VV25616LL-85M	IS62VV25616LL-85TI	IS62VV25616LL-85MI
描述	Standard SRAM, 256KX16, 85ns, CMOS, PDSO44, TSOP2-44	Standard SRAM, 256KX16, 85ns, CMOS, PBGA48, 7.20 X 8.70 MM, MINI, BGA-48	Standard SRAM, 256KX16, 85ns, CMOS, PDSO44, TSOP2-44	Standard SRAM, 256KX16, 85ns, CMOS, PBGA48, 7.20 X 8.70 MM, MINI, BGA-48
是否无铅	含铅	含铅	含铅	含铅
是否Rohs认证	不符合	不符合	不符合	不符合
厂商名称	Integrated Silicon Solution ( ISSI )	Integrated Silicon Solution ( ISSI )	Integrated Silicon Solution ( ISSI )	Integrated Silicon Solution ( ISSI )
零件包装代码	TSOP2	BGA	TSOP2	BGA
包装说明	TSOP2-44	7.20 X 8.70 MM, MINI, BGA-48	TSOP2-44	7.20 X 8.70 MM, MINI, BGA-48
针数	44	48	44	48
Reach Compliance Code	compliant	compliant	compliant	compliant
ECCN代码	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A
最长访问时间	85 ns	85 ns	85 ns	85 ns
I/O 类型	COMMON	COMMON	COMMON	COMMON
JESD-30 代码	R-PDSO-G44	R-PBGA-B48	R-PDSO-G44	R-PBGA-B48
JESD-609代码	e0	e0	e0	e0
长度	18.41 mm	8.7 mm	18.41 mm	8.7 mm
内存密度	4194304 bit	4194304 bit	4194304 bit	4194304 bit
内存集成电路类型	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM
内存宽度	16	16	16	16
功能数量	1	1	1	1
端子数量	44	48	44	48
字数	262144 words	262144 words	262144 words	262144 words
字数代码	256000	256000	256000	256000
工作模式	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
最高工作温度	70 °C	70 °C	85 °C	85 °C
组织	256KX16	256KX16	256KX16	256KX16
输出特性	3-STATE	3-STATE	3-STATE	3-STATE
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装代码	TSOP2	LFBGA	TSOP2	LFBGA
封装等效代码	TSOP44,.46,32	BGA48,6X8,30	TSOP44,.46,32	BGA48,6X8,30
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	SMALL OUTLINE, THIN PROFILE	GRID ARRAY, LOW PROFILE, FINE PITCH	SMALL OUTLINE, THIN PROFILE	GRID ARRAY, LOW PROFILE, FINE PITCH
并行/串行	PARALLEL	PARALLEL	PARALLEL	PARALLEL
峰值回流温度（摄氏度）	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
电源	1.8 V	1.8 V	1.8 V	1.8 V
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified
座面最大高度	1.2 mm	1.3 mm	1.2 mm	1.3 mm
最大待机电流	0.000005 A	0.000005 A	0.000005 A	0.000005 A
最小待机电流	1 V	1 V	1 V	1 V
最大压摆率	0.015 mA	0.015 mA	0.02 mA	0.02 mA
最大供电电压 (Vsup)	2.25 V	2.25 V	2.25 V	2.25 V
最小供电电压 (Vsup)	1.7 V	1.7 V	1.7 V	1.7 V
标称供电电压 (Vsup)	1.8 V	1.8 V	1.8 V	1.8 V
表面贴装	YES	YES	YES	YES
技术	CMOS	CMOS	CMOS	CMOS
温度等级	COMMERCIAL	COMMERCIAL	INDUSTRIAL	INDUSTRIAL
端子面层	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
端子形式	GULL WING	BALL	GULL WING	BALL
端子节距	0.8 mm	0.75 mm	0.8 mm	0.75 mm
端子位置	DUAL	BOTTOM	DUAL	BOTTOM
处于峰值回流温度下的最长时间	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
宽度	10.16 mm	7.2 mm	10.16 mm	7.2 mm
Base Number Matches	1	1	1	1

IS62VV25616LL-85T

IS62VV25616LL-85T概述

IS62VV25616LL-85T规格参数

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