Darlington Phototransistors
PNZ202S
(PN202S)
Darlington Phototransistor
Unit : mm
For optical control systems
Features
Darlington output, high sensitivity
Easy to combine with red and infrared light emitting diodes
12.5 min.
4.1±0.3
2.0±0.2
ø3.0±0.2
Small size (ø 3) ceramic package
ø0.3±0.05
ø0.45±0.05
0.9±0.15
Absolute Maximum Ratings
(Ta = 25˚C)
Parameter
Collector to emitter voltage
Emitter to collector voltage
Collector current
Collector power dissipation
Operating ambient temperature
Storage temperature
Symbol
V
CEO
V
ECO
I
C
P
C
T
opr
T
stg
Ratings
20
5
30
100
–25 to +80
–30 to +100
Unit
V
V
mA
mW
˚C
˚C
2
1
1: Emitter
2: Collector
Electro-Optical Characteristics
(Ta = 25˚C)
Parameter
Dark current
Collector photo current
Peak sensitivity wavelength
Acceptance half angle
Response time
Collector saturation voltage
*1
*2
Symbol
I
CEO
I
CE(L)*3
λ
P
θ
t
r
, t
f*2
V
CE(sat)
V
CE
= 10V
Conditions
V
CE
= 10V, L = 2 lx
*1
V
CE
= 10V
Measured from the optical axis to the half power point
V
CC
= 10V, I
CE(L)
= 5mA, R
L
= 100Ω
I
CE(L)
= 1mA, L = 100 lx
*1
min
0.2
typ
0.1
800
30
150
0.7
max
0.5
5
Unit
µA
mA
nm
deg.
µs
1.5
V
Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source.
Switching time measurement circuit
Sig.IN
V
CC
(Input pulse)
Sig.OUT
(Output pulse)
90%
10%
t
d
t
r
t
f
t
d
: Delay time
t
r
: Rise time (Time required for the collector photo current to
increase from 10% to 90% of its final value)
t
f
: Fall time (Time required for the collector photo current to
decrease from 90% to 10% of its initial value)
;;
*3
I
CE(L)
Classifications
Class
Q
0.2 to 0.8
R
0.6 to 1.65
S
1.35 to 5
Note) The part number in the parenthesis shows conventional part number.
I
CE(L)
(mA)
;;
50Ω
R
L
1
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2001 MAR
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