Agilent HLMP-4100/4101
T-1
3
/
4
(5 mm)
Double Heterojunction AlGaAs
Very High Intensity Red LED Lamps
Data Sheet
Features
• 1000 mcd at 20 mA
Description
These solid state LED lamps
utilize newly developed double
heterojunction (DH) AlGaAs/GaAs
material technology. This LED
material has outstanding light
output efficiency over a wide range
of drive currents. The lamp package
has a tapered lens designed to
• Very high intensity at low drive
currents
concentrate the luminous flux
into a narrow radiation pattern to
achieve a very high intensity. The
LED color is deep red at the
dominant wavelength of 637
nanometers. These lamps may be
DC or pulse driven to achieve
desired light output.
•
•
•
•
•
•
Narrow viewing angle
Outstanding material efficiency
Low forward voltage
CMOS/MOS compatible
TTL compatible
Deep red color
Applications
• Bright ambient lighting conditions
• Emitter/detector and signaling
applications
• General use
Package Dimensions
6.10 (0.240)
5.59 (0.220)
0.89 (0.035)
0.64 (0.025)
1.32 (0.052)
1.02 (0.040)
5.08 (0.200)
4.57 (0.180)
0.64 (0.025)
SQUARE
NOMINAL
CATHODE
2.54 (0.100)
NOMINAL
9.19 (0.362)
8.43 (0.332)
12.44 (0.490)
11.68 (0.460)
1.27 (0.050) NOM.
23.0 (0.90) MIN.
Selection Guide
Device HLMP-
4100
4101
4101-ST0xx
Luminous Intensity Iv (mcd) at 20 mA
Min.
Typ.
Max.
500.0
750.0
–
700.0
1000.0
–
1400.0
2700.0
4000.0
2θ
1/2 [1]
Degree
8
8
8
Note:
1.
θ
1
/
2
is the angle from optical centerline where the luminous intensity is
1
/
2
the optical
centerline value.
Part Numbering System
HLMX
-
4
1
XX
-
X
X
X
XX
Mechanical Option
00: Bulk
Color Bin Options
0: Full color bin distribution
Maximum Iv Bin Options
0: Open (No. max. limit)
Others: Please refer to the Iv bin Table
Minimum Iv Bin Options
Please refer to the Iv bin Table
Brightness Level
00: Lower brightness
01: Higher brightness
Notes:
1. ‘0’ indicates no maximum intensity limit.
2. ‘0’ indicates full color distribution.
2
Absolute Maximum Ratings at T
A
= 25°C
Parameter
Peak Forward Current
[1, 2]
Average Forward Current
[2]
DC Current
[3]
Power Dissipation
Reverse Voltage (I
R
= 100
µA)
Transient Forward Current (10
µs
Pulse)
[4]
Operating Temperature Range
Storage Temperature Range
Wave Soldering Temperature [1.59 mm (0.063 in.) from body]
Lead Solder Dipping Temperature [1.59 mm (0.063 in.) from body]
Maximum Rating
300
20
30
87
5
500
-20 to +100
-55 to +100
250°C for 3 seconds
260°C for 5 seconds
Units
mA
mA
mA
mW
V
mA
°C
°C
Notes:
1. Maximum I
PEAK
at f = 1 kHz, DF = 6.7%.
2. Refer to Figure 6 to establish pulsed operating conditions.
3. Derate linerally as shown in Figure 5.
4. The transient peak current is the maximum non-recurring peak current the device can withstand without damaging the LED die and
is not recommended that the device be operated at peak currents beyond the Absolute Maximum Peak Forward Current.
wire bonds. It
Electrical/Optical Characteristics at T
A
= 25°C
Symbol
V
F
V
R
λ
PEAK
λ
d
∆λ
1
/
2
τ
s
C
θ
jc
ηv
Description
Forward Voltage
Reverse Breakdown Voltage
Peak Wavelength
Dominant Wavelength
Spectral Line Halfwidth
Speed of Response
Capacitance
Thermal Resistance
Luminous Efficacy
Min.
5.0
Typ.
1.8
15.0
650
642
20
30
30
220
80
Max.
2.2
Unit
V
V
nm
nm
nm
ns
pF
°C/W
1 m/W
Test Condition
20 mA
I
R
= 100
µA
Measurement at peak
Note 1
Exponential Time
Constant, e
-t/2
V
F
= 0, f = 1 MHz
Junction to Cathode Lead
Note 2
Notes:
1. The dominant wavelength,
λ
d, is derived from the CIE chromaticity diagram and represents the color of the device.
2. The radiant intensity, Ie, in watts per steradian, may be found from the equation Ie = Iv/ηv, where Iv is the luminous intensity in candelas and
η
v is
luminous efficacy in lumens/watt.
3. The approximate total luminous flux output within a cone angle of 2θ about the optical axis,
φ
v(2θ), may be obtained from the following formula:
φ
v(2θ) = [φv(θ)/Iv(0)]Iv; Where:
φ
v(θ)/Iv(0) is obtained from Figure 7.
3
1.0
0.5
0
0
600
650
WAVELENGTH – nm
700
300
280
260
240
220
200
180
160
140
120
100
80
60
40
20
0
I
F
– FORWARD CURRENT – mA
RELATIVE INTENSITY
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
V
F
– FORWARD VOLTAGE – V
Figure 1. Relative intensity vs. wavelength.
Figure 2. Forward current vs. forward voltage.
η
V
– RELATIVE EFFICIENCY (NORMALIZED AT 20 mA)
1.2
1.0
0.8
0.6
0.4
0.2
0
NORMALIZED LUMINOUS INTENSITY
(NORMALIZED AT 20 mA)
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
5
10
15
20
25
30
5
10
20
50
100
200 300
I
DC
– DC FORWARD CURRENT – mA
I
PEAK
– PEAK FORWARD CURRENT – mA
Figure 3. Relative luminous intensity vs. dc forward current.
Figure 4. Relative efficiency vs. peak forward current.
I
PEAK
MAX. RATIO OF MAXIMUM PEAK CURRENT
TO TEMPERATURE DERATED
I
DC
MAX. MAXIMUM DC CURRENT
40
35
I
F
– FORWARD CURRENT – mA
30
25
20
15
10
5
0
0 10 20 30 40 50 60 70 80 90 100 110
T
A
– AMBIENT TEMPERATURE –
°C
Rθ
J-A
= 559°C/W
Rθ
J-A
= 574°C/W
Rθ
J-A
= 689°C/W
10
9
8
7
6
5
4
3
2
H
10 K
z
z
00 H
E–1
RAT
ESH
EFR
f–R
z
1 KH
z
3 KH
300
Hz
1
1
10
100
1000
10000
t
p
– PULSE DURATION –
µs
Figure 5. Maximum forward dc current vs. ambient temperature
derating based on T
J
MAX. = 110°C.
Figure 6. Maximum tolerable peak current vs. peak duration (I
PEAK
MAX. determined from temperature derated I
DC
MAX.).
4
20°
30°
40°
50°
60°
70°
80°
90°
NORMALIZED INTENSITY
10°
0°
ϕ
N
(θ) LUMINOUS FLUX TO INTENSITY RATIO
WITHIN A GIVEN CONE ANGLE
I
V
(0)
0.14
0.135
0.12
0.10
0.08
0.06
0.04
0.02
0
10
20
30
40
50
60
70
80
0
90 100
θ
– ANGLE FROM OPTICAL CENTERLINE – DEGREES
(CONE HALF ANGLE)
Figure 7. Relative luminous intensity vs. angular displacement.
Intensity Bin Limits
Color
Red
Bin
P
Q
R
S
T
U
V
W
X
Y
Z
Intensity Range (mcd)
Min.
Max.
540.0
850.0
850.0
1200.0
1200.0
1700.0
1700.0
2400.0
2400.0
3400.0
3400.0
4900.0
4900.0
7100.0
7100.0
10200.0
10200.0
14800.0
14800.0
21400.0
21400.0
30900.0
Tolerance for each bin limit is
±
18%.
Mechanical Option Matrix
Mechanical Option Code
00
Definition
Bulk Packaging, minimum increment 500 pcs/bag
Note:
All categories are established for classification of products. Products may not be available in all
categories. Please contact your local Agilent representative for further clarification/information.
5
单片机
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
