Advanced Power MOSFET
FEATURES
n
Avalanche Rugged Technology
n
Rugged Gate Oxide Technology
n
Lower Input Capacitance
n
Improved Gate Charge
n
Extended Safe Operating Area
n
175℃ Operating Temperature
n
Lower Leakage Current : 10
μA
(Max.) @ V
DS
= 100V
n
Lower R
DS(ON)
: 0.041
Ω
(Typ.)
IRFW/I540A
BV
DSS
= 100 V
R
DS(on)
= 0.052
Ω
I
D
= 28 A
D
2
-PAK
2
I
2
-PAK
1
1
3
2
3
1. Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GS
E
AS
I
AR
E
AR
dv/dt
P
D
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (T
C
=25℃)
Continuous Drain Current (T
C
=100℃)
Drain Current-Pulsed
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (T
A
=25℃) *
Total Power Dissipation (T
C
=25℃)
Linear Derating Factor
T
J
, T
STG
T
L
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8? from case for 5-seconds
②
①
①
③
①
Value
100
28
19.8
110
±20
523
28
10.7
6.5
3.8
107
0.71
- 55 to +175
Units
V
A
A
V
mJ
A
mJ
V/ns
W
W
W/℃
℃
300
Thermal Resistance
Symbol
R
θJC
R
θJA
R
θJA
Characteristic
Junction-to-Case
Junction-to-Ambient *
Junction-to-Ambient
Typ.
--
--
--
Max.
1.4
40
62.5
℃/W
Units
*
When mounted on the minimum pad size recommended (PCB Mount).
Rev. B1
2001
Fairchild Semiconductor Corporation
1
IRFW/I540A
Symbol
BV
DSS
ΔBV/ΔT
J
V
GS(th)
I
GSS
I
DSS
R
DS(on)
g
FS
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Characteristic
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coeff.
Gate Threshold Voltage
Gate-Source Leakage , Forward
Gate-Source Leakage , Reverse
Drain-to-Source Leakage Current
Static Drain-Source
On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain(밠iller? Charge
Min. Typ. Max. Units
100
--
2.0
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
0.11
--
--
--
--
--
--
22.56
325
148
18
18
90
56
60
10.8
27.9
--
--
4.0
100
-100
10
100
0.052
--
380
170
50
50
180
120
78
--
--
nC
ns
μA
Ω
S
pF
V
V/℃
V
nA
N-CHANNEL
POWER MOSFET
Electrical Characteristics
(T
C
=25℃ unless otherwise specified)
Test Condition
V
GS
=0V,I
D
=250μA
I
D
=250μA
V
GS
=20V
V
GS
=-20V
V
DS
=100V
V
DS
=80V,T
C
=150℃
V
GS
=10V,I
D
=14A
V
DS
=40V,I
D
=14A
④
④
See Fig 7
V
DS
=5V,I
D
=250μA
1320 1710
V
GS
=0V,V
DS
=25V,f =1MHz
See Fig 5
V
DD
=50V,I
D
=28A,
R
G
=9.1Ω
See Fig 13
V
DS
=80V,V
GS
=10V,
I
D
=28A
See Fig 6 & Fig 12
④ ⑤
④⑤
Source-Drain Diode Ratings and Characteristics
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
Characteristic
Continuous Source Current
Pulsed-Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
①
④
Min. Typ. Max. Units
--
--
--
--
--
--
--
--
132
0.63
28
110
1.5
--
--
A
V
ns
μC
Test Condition
Integral reverse pn-diode
in the MOSFET
T
J
=25℃,I
S
=28A,V
GS
=0V
T
J
=25℃,I
F
=28A
di
F
/dt=100A/μs
④
Notes ;
①
Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature
②
L=1mH, I
AS
=28A, V
DD
=25V, R
G
=27
Ω
, Starting T
J
=25℃
③
I
SD
≤28A,
di/dt≤400A/μs, V
DD
≤BV
DSS
, Starting T
J
=25℃
④
Pulse Test : Pulse Width = 250μs, Duty Cycle
≤
2%
⑤
Essentially Independent of Operating Temperature
2
N-CHANNEL
POWER MOSFET
Fig 1. Output Characteristics
1
0
2
V
GS
15V
10 V
8.0 V
7.0 V
6.0 V
5.5V
5.0 V
Bottom : 4.5V
Top :
IRFW/I540A
Fig 2. Transfer Characteristics
1
0
2
I
D
, Drain Current [A]
I
D
, Drain Current [A]
1 5
o
C
7
1
1
0
1
1
0
2
o
C
5
@Nts:
oe
1 V =0V
.
GS
2 V =4 V
.
DS
0
us et
3 2 0
µ
s P l e T s
. 5
6
8
1
0
1
0
0
1
-1
0
1
0
0
@Nts:
oe
1 2 0
µ
s P l e T s
. 5
us et
2 T = 2
o
C
.
C
5
1
1
0
- 5
o
C
5
1
0
0
2
4
V
DS
, Drain-Source Voltage [V]
V
GS
, Gate-Source Voltage [V]
Fig 3. On-Resistance vs. Drain Current
00
.8
1
2
0
Fig 4. Source-Drain Diode Forward Voltage
I
DR
, Reverse Drain Current [A]
R
DS(on)
, [
Ω
]
Drain-Source On-Resistance
00
.6
V =1 V
0
GS
00
.4
1
1
0
V =2 V
0
GS
00
.2
@ N t : T = 2
o
C
oe
J
5
00
.0
0
3
0
6
0
9
0
10
2
1 5
o
C
7
2
o
C
5
1
0
0
04
.
06
.
08
.
10
.
12
.
14
.
@Nts:
oe
1 V =0V
.
GS
us et
2 2 0
µ
s P l e T s
. 5
16
.
18
.
20
.
22
.
24
.
I
D
, Drain Current [A]
V
SD
, Source-Drain Voltage [V]
Fig 5. Capacitance vs. Drain-Source Voltage
20
50
C =C +C (C =sotd)
iss gs gd
ds
h r e
C =C +C
oss ds gd
C =C
rss gd
Fig 6. Gate Charge vs. Gate-Source Voltage
V =2 V
0
DS
V =5 V
0
DS
V =8 V
0
DS
20
00
1
0
10
50
C
oss
10
00
C
rss
50
0
@Nts:
oe
1 V =0V
.
GS
2 f=1Mz
.
H
V
GS
, Gate-Source Voltage [V]
C
iss
Capacitance [pF]
5
@Nts:I =80A
oe
D
2.
0
0
1
0
2
0
3
0
4
0
5
0
6
0
7
0
0
0
1
0
1
1
0
V
DS
, Drain-Source Voltage [V]
Q
G
, Total Gate Charge [nC]
3
IRFW/I540A
Fig 7. Breakdown Voltage vs. Temperature
12
.
30
.
N-CHANNEL
POWER MOSFET
Fig 8. On-Resistance vs. Temperature
BV
DSS
, (Normalized)
Drain-Source Breakdown Voltage
11
.
R
DS(on)
, (Normalized)
Drain-Source On-Resistance
25
.
20
.
10
.
15
.
10
.
@Nts:
oe
1 V =1 V
.
GS
0
2 I =1. A
.
D
40
-0
5
-5
2
0
2
5
5
0
7
5
10
0
15
2
10
5
15
7
20
0
09
.
@Nts:
oe
1 V =0V
.
GS
2 I = 2 0
µ
A
.
D
5
-0
5
-5
2
0
2
5
5
0
7
5
10
0
15
2
10
5
15
7
20
0
05
.
08
.
-5
7
00
.
-5
7
T
J
, Junction Temperature [
o
C]
T
J
, Junction Temperature [
o
C]
Fig 9. Max. Safe Operating Area
1
3
0
Oeaini Ti Ae
prto n hs ra
i L m t d b R
DS(on)
s iie y
Fig 10. Max. Drain Current vs. Case Temperature
3
0
I
D
, Drain Current [A]
2
5
1
µ
s
0
1 0
µ
s
0
1m
s
1
0
2
I
D
, Drain Current [A]
2
0
1
1
0
D
C
1 m
0 s
1
5
1
0
1
0
0
@Nts:
oe
1 T = 2
o
C
.
C
5
2 T = 1 5
o
C
.
J
7
3 Snl Ple
. ige us
5
1
-1 0
0
1
0
1
1
0
1
2
0
0
2
5
5
0
7
5
10
0
15
2
10
5
15
7
V
DS
, Drain-Source Voltage [V]
T
c
, Case Temperature [
o
C]
Fig 11. Thermal Response
Thermal Response
10
0
D=0.5
@ Notes :
1. Z
θ
J C
(t)=1.4
o
C/W Max.
2. Duty Factor, D=t
1
/t
2
3. T
J M
-T
C
=P
D M
*Z
θ
J C
(t)
P
DM
0.2
0.1
10
-1
0.05
0.02
0.01
Z
JC
(t) ,
single pulse
t
1
t
2
θ
10
- 2 - 5
10
10
- 4
10
- 3
10
- 2
10
- 1
10
0
10
1
t
1
, Square Wave Pulse Duration
[sec]
4
N-CHANNEL
POWER MOSFET
Fig 12. Gate Charge Test Circuit & Waveform
IRFW/I540A
* Current Regulator ”
50KΩ
12V
200nF
300nF
Same Type
as DUT
V
GS
Q
g
10V
V
DS
V
GS
DUT
3mA
Q
gs
Q
gd
R
1
Current Sampling (I
G
)
Resistor
R
2
Current Sampling (I
D
)
Resistor
Charge
Fig 13. Resistive Switching Test Circuit & Waveforms
R
L
V
out
V
in
R
G
DUT
V
in
10V
t
d(on)
t
on
t
r
t
d(off)
t
off
t
f
10%
V
out
V
DD
( 0.5 rated V
DS
)
90%
Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms
L
L
V
DS
Vary t
p
to obtain
required peak I
D
BV
DSS
1
E
AS
= ---- L
L
I
AS2
--------------------
2
BV
DSS
-- V
DD
BV
DSS
I
AS
C
V
DD
V
DD
t
p
I
D
R
G
DUT
10V
t
p
I
D
(t)
V
DS
(t)
Time
5
嵌入式系统
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
