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BUZ 103SL
SIPMOS Power Transistor
Features
•
N channel
•
Product Summary
Drain source voltage
Drain-Source on-state resistance
Continuous drain current
V
DS
I
D
55
28
V
A
Enhancement mode
R
DS(on)
0.026
Ω
•
Avalanche rated
•
Logic Level
•
dv/dt rated
•
175 ˚C operating temperature
Type
BUZ103SL
BUZ103SL E3045A
BUZ103SL E3045
Package
Ordering Code
Packaging
Pin 1
G
Pin 2
D
Pin 3
S
P-TO220-3-1 Q67040-S4008-A2 Tube
P-TO263-3-2 Q67040-S4008-A6 Tape and Reel
P-TO263-3-2 Q67040-S4008-A5 Tube
Maximum Ratings,
at
Tj
= 25 ˚C unless otherwise specified
Parameter
Continuous drain current
Symbol
Value
28
20
112
140
7.5
6
kV/
µ
s
mJ
Unit
A
I
D
T
C
= 25 ˚C
T
C
= 100 ˚C
Pulsed drain current
I
Dpulse
E
AS
E
AR
dv/dt
T
C
= 25 ˚C
Avalanche energy, single pulse
I
D
= 28 A,
V
DD
= 25 V,
R
GS
= 25
Ω
Avalanche energy, periodic limited by
T
jmax
Reverse diode dv/dt
I
S
= 28 A,
V
DS
= 40 V, di/dt = 200 A/
µ
s,
T
jmax
= 175 ˚C
Gate source voltage
Power dissipation
V
GS
P
tot
T
j ,
T
stg
–20
75
-55... +175
55/175/56
V
W
˚C
T
C
= 25 ˚C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
Data Book
1
05.99
BUZ 103SL
Thermal Characteristics
Parameter
Characteristics
Thermal resistance, junction - case
Thermal resistance, junction - ambient, leded
SMD version, device on PCB:
@ min. footprint
@ 6 cm
2
cooling area
1)
Symbol
min.
Values
typ.
-
-
-
-
max.
2
62
62
40
K/W
Unit
R
thJC
R
thJA
R
thJA
-
-
-
-
Electrical Characteristics,
at
Tj
= 25 ˚C, unless otherwise specified
Parameter
Static Characteristics
Drain- source breakdown voltage
Symbol
min.
Values
typ.
-
1.6
max.
-
2
µA
-
-
-
0.1
-
10
1
100
100
nA
Ω
-
-
0.04
0.044
0.0235 0.026
V
Unit
V
(BR)DSS
V
GS(th)
I
DSS
55
1.2
V
GS
= 0 V,
I
D
= 0.25 mA
Gate threshold voltage,
V
GS
=
V
DS
I
D
= 50 µA
Zero gate voltage drain current
V
DS
= 50 V,
V
GS
= 0 V,
T
j
= 25 ˚C
V
DS
= 50 V,
V
GS
= 0 V,
T
j
= 150 ˚C
Gate-source leakage current
I
GSS
R
DS(on)
V
GS
= 20 V,
V
DS
= 0 V
Drain-Source on-state resistance
V
GS
= 4.5 V,
I
D
= 20 A
V
GS
= 10 V,
I
D
= 20 A
1 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70µm thick) copper area for drain
connection. PCB is vertical without blown air.
Data Book
2
05.99
BUZ 103SL
Electrical Characteristics,
at
Tj
= 25 ˚C, unless otherwise specified
Parameter
Dynamic Characteristics
Transconductance
Symbol
min.
Values
typ.
20
770
230
130
10
max.
-
960
300
165
15
ns
S
pF
Unit
g
fs
C
iss
C
oss
C
rss
t
d(on)
10
-
-
-
-
V
DS
≥2*
I
D
*R
DS(on)max
,
I
D
= 20 A
Input capacitance
V
GS
= 0 V,
V
DS
= 25 V,
f
= 1 MHz
Output capacitance
V
GS
= 0 V,
V
DS
= 25 V,
f
= 1 MHz
Reverse transfer capacitance
V
GS
= 0 V,
V
DS
= 25 V,
f
= 1 MHz
Turn-on delay time
V
DD
= 30 V,
V
GS
= 4.5 V,
I
D
= 28 A,
R
G
= 6.8
Ω
Rise time
t
r
-
75
115
V
DD
= 30 V,
V
GS
= 4.5 V,
I
D
= 28 A,
R
G
= 6.8
Ω
Turn-off delay time
t
d(off)
-
30
45
V
DD
= 30 V,
V
GS
= 4.5 V,
I
D
= 28 A,
R
G
= 6.8
Ω
Fall time
t
f
-
20
30
V
DD
= 30 V,
V
GS
= 4.5 V,
I
D
= 28 A,
R
G
= 6.8
Ω
Data Book
3
05.99
BUZ 103SL
Electrical Characteristics,
at
Tj
= 25 ˚C, unless otherwise specified
Parameter
Dynamic Characteristics
Gate to source charge
Symbol
min.
Values
typ.
4
12
32
4
max.
6
18
50
-
V
nC
Unit
Q
gs
Q
gd
Q
g
V
(plateau)
-
-
-
-
V
DD
= 40 V,
I
D
= 28 A
Gate to drain charge
V
DD
= 40 V,
I
D
= 28 A
Gate charge total
V
DD
= 40 V,
I
D
= 28 A,
V
GS
= 0 to 10 V
Gate plateau voltage
V
DD
= 40 V,
I
D
= 28 A
Reverse Diode
Inverse diode continuous forward current
I
S
I
SM
V
SD
t
rr
Q
rr
-
-
-
-
-
-
-
1.1
60
0.15
28
112
1.8
90
0.25
A
T
C
= 25 ˚C
Inverse diode direct current,pulsed
T
C
= 25 ˚C
Inverse diode forward voltage
V
ns
µC
V
GS
= 0 V,
I
F
= 56 A
Reverse recovery time
V
R
= 30 V,
I
F
=I
S
, di
F
/dt = 100 A/µs
Reverse recovery charge
V
R
= 30 V,
I
F=
l
S
, di
F
/dt = 100 A/µs
Data Book
4
05.99
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