1N5221B Series
500 mW DO-35 Hermetically
Sealed Glass Zener Voltage
Regulators
This is a complete series of 500 mW Zener diodes with limits and
excellent operating characteristics that reflect the superior capabilities
of silicon–oxide passivated junctions. All this in an axial–lead
hermetically sealed glass package that offers protection in all common
environmental conditions.
Specification Features:
http://onsemi.com
Cathode
Anode
•
Zener Voltage Range – 2.4 V to 91 V
•
ESD Rating of Class 3 (>16 KV) per Human Body Model
•
DO–204AH (DO–35) Package – Smaller than Conventional
DO–204AA Package
•
Double Slug Type Construction
•
Metallurgical Bonded Construction
Mechanical Characteristics:
CASE:
Double slug type, hermetically sealed glass
FINISH:
All external surfaces are corrosion resistant and leads are
AXIAL LEAD
CASE 299
GLASS
MARKING DIAGRAM
L
1N
52
xxB
YWW
readily solderable
MAXIMUM LEAD TEMPERATURE FOR SOLDERING PURPOSES:
230°C, 1/16″ from the case for 10 seconds
POLARITY:
Cathode indicated by polarity band
MOUNTING POSITION:
Any
MAXIMUM RATINGS
(Note 1.)
Rating
Max. Steady State Power Dissipation
@ T
L
≤
75°C, Lead Length = 3/8″
Derate above 75°C
Operating and Storage
Temperature Range
Symbol
P
D
Value
500
4.0
T
J
, T
stg
–65 to
+200
Unit
mW
mW/°C
°C
L
= Assembly Location
1N52xxB = Device Code
=
(See Table Next Page)
Y
= Year
WW
= Work Week
ORDERING INFORMATION
Device
1N52xxB
1N52xxBRL
1N52xxBRL2 *
1N52xxBRA1
1N52xxBTA
1N52xxBTA2 *
1N52xxBRR1
{
1N52xxBRR2
}
Package
Axial Lead
Axial Lead
Axial Lead
Axial Lead
Axial Lead
Axial Lead
Axial Lead
Axial Lead
Shipping
3000 Units/Box
5000/Tape & Reel
5000/Tape & Reel
3000/Ammo Pack
5000/Ammo Pack
5000/Ammo Pack
3000/Tape & Reel
3000/Tape & Reel
1. Some part number series have lower JEDEC registered ratings.
* The “2” suffix refers to 26 mm tape spacing.
{
Polarity band
up
with cathode lead off first
}
Polarity band
down
with cathode lead off first
Devices listed in
bold, italic
are ON Semiconductor
Preferred
devices.
Preferred
devices are recommended
choices for future use and best overall value.
©
Semiconductor Components Industries, LLC, 2001
1
May, 2001 – Rev. 2
Publication Order Number:
1N5221B/D
1N5221B Series
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless
otherwise noted, Based on dc measurements at thermal
equilibrium; lead length = 3/8″; thermal resistance of heat sink
= 30°C/W, V
F
= 1.1 V Max @ I
F
= 200 mA for all types)
Symbol
V
Z
I
ZT
Z
ZT
I
ZK
Z
ZK
I
R
V
R
I
F
V
F
q
VZ
Parameter
Reverse Zener Voltage @ I
ZT
Reverse Current
Maximum Zener Impedance @ I
ZT
Reverse Current
Maximum Zener Impedance @ I
ZK
Reverse Leakage Current @ V
R
Breakdown Voltage
Forward Current
Forward Voltage @ I
F
Maximum Zener Voltage Temperature Coefficient
V
Z
V
R
I
R
V
F
I
ZT
V
I
F
I
Zener Voltage Regulator
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted, Based on dc measurements at thermal equilibrium; lead
length = 3/8″; thermal resistance of heat sink = 30°C/W, V
F
= 1.1 V Max @ I
F
= 200 mA for all types)
Zener Voltage
(Note 3.)
Device
(Note 2.)
1N5221B
1N5222B
1N5223B
1N5224B
1N5225B
Device
Marking
1N5221B
1N5222B
1N5223B
1N5224B
1N5225B
V
Z
(Volts)
Min
2.28
2.375
2.565
2.66
2.85
Nom
2.4
2.5
2.7
2.8
3.0
Max
2.52
2.625
2.835
2.94
3.15
@ I
ZT
mA
20
20
20
20
20
Zener Impedance
(Note 4.)
Z
ZT
@ I
ZT
W
30
30
30
30
29
Z
ZK
@ I
ZK
W
1200
1250
1300
1400
1600
mA
0.25
0.25
0.25
0.25
0.25
µA
100
100
75
75
50
Leakage Current
I
R
@ V
R
Volts
1
1
1
1
1
q
VZ
(Note 5.)
%/5C
–0.085
–0.085
–0.08
–0.08
–0.075
1N5226B
1N5227B
1N5228B
1N5229B
1N5230B
1N5231B
1N5232B
1N5233B
1N5234B
1N5235B
1N5226B
1N5227B
1N5228B
1N5229B
1N5230B
1N5231B
1N5232B
1N5233B
1N5234B
1N5235B
3.14
3.42
3.71
4.09
4.47
4.85
5.32
5.7
5.89
6.46
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.0
6.2
6.8
3.46
3.78
4.09
4.51
4.93
5.35
5.88
6.3
6.51
7.14
20
20
20
20
20
20
20
20
20
20
28
24
23
22
19
17
11
7
7
5
1600
1700
1900
2000
1900
1600
1600
1600
1000
750
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
25
15
10
5
5
5
5
5
5
3
1
1
1
1
2
2
3
3.5
4
5
–0.07
–0.065
–0.06
±0.055
±0.03
+
0.03
0.038
0.038
0.045
0.05
2.
TOLERANCE
The JEDEC type numbers shown indicate a tolerance of
±5%.
3.
ZENER VOLTAGE (V
Z
) MEASUREMENT
The zener voltage is measured with the device junction in the thermal equilibrium at the lead temperature (T
L
) at 30°C
±
1°C and 3/8″ lead
length.
4.
ZENER IMPEDANCE (Z
Z
) DERIVATION
Z
ZT
and Z
ZK
are measured by dividing the ac voltage drop across the device by the ac current applied. The specified limits are for I
Z(ac)
=
0.1 I
Z(dc)
with the ac frequency = 60 Hz.
5.
TEMPERATURE COEFFICIENT (q
VZ
) *
Test conditions for temperature coefficient are as follows:
A. I
ZT
= 7.5 mA, T
1
= 25°C, T
2
= 125°C (1N5221B through 1N5242B)
B. I
ZT
= Rated I
ZT
, T
1
= 25°C, T
2
= 125°C (1N5243B through 1N5281B)
Device to be temperature stabilized with current applied prior to reading breakdown voltage at the specified ambient temperature.
* For more information on special selections contact your nearest ON Semiconductor representative.
http://onsemi.com
2
1N5221B Series
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted, Based on dc measurements at thermal equilibrium; lead
length = 3/8″; thermal resistance of heat sink = 30°C/W, V
F
= 1.1 V Max @ I
F
= 200 mA for all types) (continued)
Zener Voltage
(Note 7.)
Device
(Note 6.)
1N5236B
1N5237B
1N5238B
1N5239B
1N5240B
1N5241B
1N5242B
1N5243B
1N5244B
1N5245B
Device
Marking
1N5236B
1N5237B
1N5238B
1N5239B
1N5240B
1N5241B
1N5242B
1N5243B
1N5244B
1N5245B
V
Z
(Volts)
Min
7.13
7.79
8.265
8.65
9.5
10.45
11.4
12.35
13.3
14.25
Nom
7.5
8.2
8.7
9.1
10
11
12
13
14
15
Max
7.87
8.61
9.135
9.55
10.5
11.55
12.6
13.65
14.7
15.75
@ I
ZT
mA
20
20
20
20
20
20
20
9.5
9
8.5
Zener Impedance
(Note 8.)
Z
ZT
@ I
ZT
W
6
8
8
10
17
22
30
13
15
16
Z
ZK
@ I
ZK
W
500
500
600
600
600
600
600
600
600
600
mA
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
µA
3
3
3
3
3
2
1
0.5
0.1
0.1
Leakage Current
I
R
@ V
R
Volts
6
6.5
6.5
7
8
8.4
9.1
9.9
10
11
q
VZ
(Note 9.)
%/5C
0.058
0.062
0.065
0.068
0.075
0.076
0.077
0.079
0.082
0.082
1N5246B
1N5247B
1N5248B
1N5249B
1N5250B
1N5251B
1N5252B
1N5253B
1N5254B
1N5255B
1N5256B
1N5257B
1N5258B
1N5259B
1N5260B
1N5261B
1N5262B
1N5263B
1N5264B
1N5265B
1N5266B
1N5267B
1N5268B
1N5269B
1N5270B
1N5246B
1N5247B
1N5248B
1N5249B
1N5250B
1N5251B
1N5252B
1N5253B
1N5254B
1N5255B
1N5256B
1N5257B
1N5258B
1N5259B
1N5260B
1N5261B
1N5262B
1N5263B
1N5264B
1N5265B
1N5266B
1N5267B
1N5268B
1N5269B
1N5270B
15.2
16.15
17.1
18.05
19
20.9
22.8
23.75
25.65
26.6
28.5
31.35
34.2
37.05
40.85
44.65
48.45
53.2
57
58.9
64.6
71.25
77.9
82.65
86.45
16
17
18
19
20
22
24
25
27
28
30
33
36
39
43
47
51
56
60
62
68
75
82
87
91
16.8
17.85
18.9
19.95
21
23.1
25.2
26.25
28.35
29.4
31.5
34.65
37.8
40.95
45.15
49.35
53.55
58.8
63
65.1
71.4
78.75
86.1
91.35
95.55
7.8
7.4
7
6.6
6.2
5.6
5.2
5.0
4.6
4.5
4.2
3.8
3.4
3.2
3.0
2.7
2.5
2.2
2.1
2.0
1.8
1.7
1.5
1.4
1.4
17
19
21
23
25
29
33
35
41
44
49
58
70
80
93
105
125
150
170
185
230
270
330
370
400
600
600
600
600
600
600
600
600
600
600
600
700
700
800
900
1000
1100
1300
1400
1400
1600
1700
2000
2200
2300
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
12
13
14
14
15
17
18
19
21
21
23
25
27
30
33
36
39
43
46
47
52
56
62
68
69
0.083
0.084
0.085
0.086
0.086
0.087
0.088
0.089
0.090
0.091
0.091
0.092
0.093
0.094
0.095
0.095
0.096
0.096
0.097
0.097
0.097
0.098
0.098
0.099
0.099
6.
TOLERANCE
The JEDEC type numbers shown indicate a tolerance of
±5%.
7.
ZENER VOLTAGE (V
Z
) MEASUREMENT
The zener voltage is measured with the device junction in the thermal equilibrium at the lead temperature (T
L
) at 30°C
±
1°C and 3/8″ lead
length.
8.
ZENER IMPEDANCE (Z
Z
) DERIVATION
Z
ZT
and Z
ZK
are measured by dividing the ac voltage drop across the device by the ac current applied. The specified limits are for I
Z(ac)
=
0.1 I
Z(dc)
with the ac frequency = 60 Hz.
9.
TEMPERATURE COEFFICIENT (q
VZ
) *
Test conditions for temperature coefficient are as follows:
A. I
ZT
= 7.5 mA, T
1
= 25°C, T
2
= 125°C (1N5221B through 1N5242B)
B. I
ZT
= Rated I
ZT
, T
1
= 25°C, T
2
= 125°C (1N5243B through 1N5281B)
Device to be temperature stabilized with current applied prior to reading breakdown voltage at the specified ambient temperature.
* For more information on special selections contact your nearest ON Semiconductor representative.
http://onsemi.com
3
1N5221B Series
0.7
P
D
, STEADY STATE
POWER DISSIPATION (WATTS)
0.6
0.5
0.4
0.3
0.2
0.1
0
0
20
40
60
80
100
120
140
160
180
200
HEAT
SINKS
3/8"
3/8"
T
L
, LEAD TEMPERATURE (°C)
Figure 1. Steady State Power Derating
http://onsemi.com
4
1N5221B Series
θ
JL , JUNCTION TO LEAD THERMAL RESISTANCE (
°
C/W)
APPLICATION NOTE — ZENER VOLTAGE
Since the actual voltage available from a given zener
diode is temperature dependent, it is necessary to determine
junction temperature under any set of operating conditions
in order to calculate its value. The following procedure is
recommended:
Lead Temperature, T
L
, should be determined from:
T
L
=
θ
LA
P
D
+ T
A
.
500
400
L
L
300
200
100
0
2.4-60 V
62-200 V
θ
LA
is the lead-to-ambient thermal resistance (°C/W) and P
D
is the power dissipation. The value for
θ
LA
will vary and
depends on the device mounting method.
θ
LA
is generally 30
to 40°C/W for the various clips and tie points in common use
and for printed circuit board wiring.
The temperature of the lead can also be measured using a
thermocouple placed on the lead as close as possible to the
tie point. The thermal mass connected to the tie point is
normally large enough so that it will not significantly
respond to heat surges generated in the diode as a result of
pulsed operation once steady-state conditions are achieved.
Using the measured value of T
L
, the junction temperature
may be determined by:
T
J
= T
L
+
∆T
JL
.
0
0.2
0.4
0.6
0.8
1
L, LEAD LENGTH TO HEAT SINK (INCH)
Figure 2. Typical Thermal Resistance
1000
7000
5000
2000
1000
700
500
200
100
70
50
20
10
7
5
2
1
0.7
0.5
0.2
0.1
0.07
0.05
0.02
0.01
0.007
0.005
0.002
0.001
3
4
5
6
7
8
9
10
11
12
13
14
15
+25°C
TYPICAL LEAKAGE CURRENT
AT 80% OF NOMINAL
BREAKDOWN VOLTAGE
∆T
JL
is the increase in junction temperature above the lead
temperature and may be found from Figure 2 for dc power:
∆T
JL
=
θ
JL
P
D
.
∆V
=
θ
VZ
T
J
.
θ
VZ
, the zener voltage temperature coefficient, is found
from Figures 4 and 5.
Under high power-pulse operation, the zener voltage will
vary with time and may also be affected significantly by the
zener resistance. For best regulation, keep current
excursions as low as possible.
Surge limitations are given in Figure 7. They are lower
than would be expected by considering only junction
temperature, as current crowding effects cause temperatures
to be extremely high in small spots, resulting in device
degradation should the limits of Figure 7 be exceeded.
I R , LEAKAGE CURRENT (
µ
A)
For worst-case design, using expected limits of I
Z
, limits
of P
D
and the extremes of T
J
(∆T
J
) may be estimated.
Changes in voltage, V
Z
, can then be found from:
+125°C
V
Z
, NOMINAL ZENER VOLTAGE (VOLTS)
Figure 3. Typical Leakage Current
http://onsemi.com
5
国产芯片交流
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
