AMMC - 6430
25 - 33 GHz Power Amplifier
Data Sheet
Chip Size: 2500 x 1750 µm (100 x 69 mils)
Chip Size Tolerance: ± 10µm (±0.4 mils)
Chip Thickness: 100 ± 10µm (4 ± 0.4 mils)
Pad Dimensions: 100 x 100 µm (4 ± 0.4 mils)
Description
The AMMC-6430 MMIC is a broadband nearly 1W power
amplifier designed for use in transmitters that operate
in various frequency bands between 25GHz and 33GHz.
This MMIC optimized for linear operation with an output
third order intercept point (OIP3) of 37dBm. At 30GHz it
provides 29dBm of output power (P-1dB) and 17dB of
gain. The device has input and output matching circuitry
for use in 50 Ω environments. The AMMC-6430 also inte-
grates a temperature compensated RF power detection
circuit that enables power detection of 0.3V/W. DC bias is
simple and the device operates on widely available 5.5V
for current supply (negative voltage only needed for Vg).
It is fabricated in a PHEMT process for exceptional power
and gain performance. For improved reliability and
moisture protection, the die is passivated at the active
areas.
Features
•
Wide frequency range: 25 - 33 GHz
•
High gain: 17 dB
•
Power: @30 GHz, P-1dB=29 dBm
•
Highly linear: OIP3=37dBm
•
Integrated RF power detector
•
5.5 Volt, -0.7 Volt, 900mA operation
Applications
•
Microwave Radio systems
•
Satellite VSAT and DBS systems
•
LMDS & Pt-Pt mmW Long Haul
•
802.16 & 802.20 WiMax BWA
•
WLL and MMDS loops
•
Can be driven by AMMC-6345, increasingluding overall
gain.
AMMC-6430 Absolute Maximum Ratings
[1]
Symbol
V
d
V
g
I
dq
P
in
T
ch
T
stg
T
max
Parameters/Conditions
Positive Drain Voltage
Gate Supply Voltage
Drain Current
CW Input Power
Operating Channel Temp.
Storage Case Temp.
Maximum Assembly Temp (60 sec max)
Units
V
V
mA
dBm
°C
°C
°C
Min.
Max.
7
-3
0.5
1500
23
+150
-65
+150
+300
Note:
1. Operation in excess of any one of these conditions may result in permanent damage to this device.
Note: These devices are ESD sensitive. The following precautions are strongly recommended. Ensure
that an ESD approved carrier is used when dice are transported from one destination to another.
Personal grounding is to be worn at all times when handling these devices
AMMC-6430 DC Specifications/Physical Properties
[1]
Symbol
I
dq
Parameters and Test Conditions
Drain Supply Current
(under any RF power drive and temperature)
(V
d
=5.0 V, V
g
set for I
d
Typical)
Gate Supply Operating Voltage
(I
d(Q)
= 900 (mA))
Thermal Resistance
[2]
(Backside temperature, T
b
= 25°C)
Units
mA
Min.
Typ.
900
Max.
1000
V
g
q
ch-b
V
°C/W
-0.9
-0.7
9
-0.55
Notes:
1. Ambient operational temperature T
A
=25°C unless otherwise noted.
2. Channel-to-backside Thermal Resistance (θ
ch-b
) = 10°C/W at T
channel
(T
c
) = 107°C as measured using infrared microscopy. Thermal Resistance
at backside temperature (T
b
) = 25°C calculated from measured data.
AMMC-6430 RF Specifications
[3, 4, 5]
T
A
= 25°C, V
d
=5.5V, I
d(Q)=
900 mA, Z
o
=50 Ω
Symbol
Gain
P
-1dB
P
-3dB
OIP3
RLin
RLout
Isolation
Parameters and Test Conditions
Small-signal Gain
[4]
Output Power at 1dB Gain Compression
Output Power at 3dB Gain Compression
Third Order Intercept Point; Df=100MHz;
Pin=-20dBm
Input Return Loss
[4]
Output Return Loss
[4]
Min. Reverse Isolation
Units
dB
dBm
dBm
dBm
dB
dB
dB
Minimum
14
27
Typical
17
28.5
29
37
-15
-15
-43
Maximum
Sigma
0.5
0.38
0.35
0.8
0.92
0.63
1.8
Notes:
3. Small/Large -signal data measured in wafer form T
A
= 25°C.
4. 100% on-wafer RF test is done at frequency = 27, 29, and 32 GHz. Statistics based on 1500 part sample
5. Specifications are derived from measurements in a 50 Ω test environment. Aspects of the amplifier performance may be improved over a
more narrow bandwidth by application of additional conjugate, linearity, or power matching.
LSL
LSL
LSL
14 14.5 15 15.5 16 16.5 17 17.5 18 18.5
27
28
29
27
28
Gain at 29 GHz
P-1dB at 29 GHz
P-1dB at 33 GHz
Typical distribution of Small Signal Gain and Output Power @P-1dB. Based on 1500 part sampled over several produc-
tion lots.
2
AMMC-6430 Typical Performances (T
A
= 25°C, V
d
=5.5 V, I
dq
= 900 mA, Z
in
= Z
out
= 50
Ω)
NOTE: These measurements are in a 50 Ω test environment. Aspects of the amplifier performance may be improved
over a more narrow bandwidth by application of additional conjugate, linearity, or power matching.
25
S21[dB]
S12[dB]
20
10
0
-5
S11[dB]
S22[dB]
35
P-1
PAE
30
P-1 [dBm], PAE [%]
Return Loss [dB]
-10
S21[dB]
S12 [dB]
15
-10
-15
-20
-25
25
10
-30
5
20
15
0
15
20
25
30
Frequency [GHz]
35
-50
40
-30
15
20
25
30
Frequency [GHz]
35
40
10
22
24
26
28
30
32
Frequency [GHz]
34
36
Figure 1. Typical Gain and Reverse Isolation
Figure 2. Typical Return Loss (Input and Output)
Figure 3. Typical Output Power (@P-1dB) and PAE
10
46
44
40
Pout(dBm)
35
Po[dBm], and, PAE[%]
30
25
20
15
10
5
PAE[%]
Id(total)
1250
8
42
1150
Noise Figure [dB]
IP3 [dBm]
38
36
34
1050
4
2
32
950
0
24
26
28
30
32
Frequency [GHz]
34
36
30
24
26
28
30
Frequency [GHz]
32
34
0
-10
-5
0
5
10
Pin [dBm]
15
20
850
Figure 4. Typical Noise Figure
Figure 5. Typical Output 3
rd
Order Intercept Pt.
Figure 6. Typical Output Power, PAE, and Total
Drain Current versus Input Power at30GHz
0
S11_20
S11_-40
S11_85
0
S22_20
S22_-40
S22_85
30
S21_20
S21_-40
S21_85
-5
-5
25
S11[dB]
-10
S22[dB]
S21[dB]
-10
20
-15
-15
15
-20
-20
-25
15
20
25
30
Frequency[GHz]
35
40
-25
15
20
25
30
Frequency[GHz]
35
40
10
15
20
25
30
Frequency[GHz]
35
40
Figure 7. Typical S11 over temperature
Figure 8. Typical S22 over temperature
Figure 9. Typical Gain over temperature
3
Ids [mA]
6
40
32
30
28
P-1 [dBm]
26
24
22
20
24
P-1_85deg
P-1_20deg
P-1_-40deg
26
28
30
32
Frequency [GHz]
34
36
Figure 10. Typical One dB Compression over temperature
Typical Scattering Parameters
[1]
, (T
A
= 25°C, V
d
=5.5 V, I
dq
= 900 mA, Z
in
= Z
out
= 50
Ω)
S11
Freq GHz
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
S21
Mag
0.51
0.47
0.44
0.41
0.38
0.35
0.32
0.30
0.29
0.27
0.22
0.19
0.16
0.13
0.13
0.09
0.05
0.06
0.10
0.10
0.05
0.05
0.07
0.08
0.11
0.13
0.08
0.07
0.13
0.17
0.20
S12
Mag
0.01
0.01
0.01
0.01
0.02
0.02
0.02
0.09
0.36
1.11
2.48
3.89
5.63
6.97
6.96
6.72
6.59
6.52
6.53
6.83
7.28
7.31
7.11
6.51
6.12
4.97
3.40
2.08
1.12
0.62
0.33
S22
Mag
4.56E-03
3.99E-03
5.44E-03
5.78E-03
3.82E-03
3.86E-03
5.70E-03
3.83E-03
3.39E-03
4.85E-03
2.82E-03
3.55E-03
3.26E-03
3.21E-03
4.61E-03
5.45E-03
8.96E-03
7.62E-03
9.71E-03
7.79E-03
9.95E-03
6.26E-03
8.13E-03
8.07E-03
5.40E-03
5.70E-03
6.36E-03
1.02E-02
1.01E-02
1.02E-02
8.59E-03
dB
-5.91
-6.57
-7.18
-7.75
-8.35
-9.21
-9.81
-10.49
-10.90
-11.38
-13.19
-14.34
-15.81
-17.43
-17.52
-21.12
-26.33
-24.36
-19.96
-19.75
-25.24
-26.81
-23.34
-22.06
-18.80
-17.57
-21.76
-23.11
-18.05
-15.25
-14.11
Phase
dB
Phase
-150.08
177.71
159.58
144.22
127.82
131.62
174.87
-173.40
146.31
86.03
12.36
-59.81
-128.14
160.79
96.24
39.34
-11.71
-61.96
-110.13
-159.96
145.89
92.90
34.67
-21.77
-80.57
-147.31
147.08
87.01
33.30
-13.03
-54.38
dB
-46.83
-47.99
-45.28
-44.76
-48.37
-48.26
-44.88
-48.33
-49.40
-46.28
-50.99
-48.99
-49.75
-49.86
-46.73
-45.27
-40.96
-42.37
-40.26
-42.17
-40.05
-44.07
-41.80
-41.87
-45.35
-44.88
-43.93
-39.80
-39.89
-39.87
-41.33
Phase
-163.93
161.86
162.25
127.45
114.36
99.54
76.35
66.69
62.63
90.04
85.49
59.91
65.89
101.47
79.40
80.30
82.13
68.87
49.68
47.32
32.17
27.80
27.52
29.56
9.23
28.68
69.74
47.20
23.04
16.72
38.69
dB
-4.57
-5.15
-5.83
-7.10
-5.96
-6.74
-7.98
-9.74
-12.08
-15.37
-20.54
-33.57
-27.13
-20.75
-17.92
-19.27
-23.28
-29.28
-23.52
-22.46
-24.92
-31.37
-27.49
-20.47
-19.49
-18.86
-18.79
-19.84
-20.37
-19.65
-19.65
Mag
0.59
0.55
0.51
0.44
0.50
0.46
0.40
0.33
0.25
0.17
0.09
0.02
0.04
0.09
0.13
0.11
0.07
0.03
0.07
0.08
0.06
0.03
0.04
0.09
0.11
0.11
0.12
0.10
0.10
0.10
0.10
Phase
164.28
144.68
125.30
109.48
93.30
66.48
42.81
19.70
-2.59
-23.98
-43.76
-36.06
58.91
56.63
20.33
-3.94
-27.01
-9.02
26.76
16.30
-25.48
-70.15
124.04
87.29
57.42
45.83
42.27
33.52
37.79
38.29
41.26
165.15 -38.73
148.07 -38.15
132.45 -38.84
116.37 -38.40
102.02 -35.23
89.97
76.63
65.83
53.72
38.47
26.38
19.22
11.11
8.99
-4.76
-14.59
-16.19
37.91
25.90
16.45
8.60
19.45
52.06
55.38
38.20
22.77
12.34
58.33
65.65
48.45
38.60
-35.73
-35.32
-21.06
-8.97
0.91
7.87
11.79
15.01
16.86
16.85
16.54
16.37
16.28
16.29
16.69
17.24
17.27
17.04
16.27
15.73
13.93
10.64
6.34
0.98
-4.18
-9.56
Note:
1. Data obtained from on-wafer measurements.
4
Biasing and Operation
The recommended quiescent DC bias condition for
optimum efficiency, performance, and reliability is Vd=5
volts with Vg set for Id=950 mA. Minor improvements in
performance are possible depending on the application.
The drain bias voltage range is 3 to 5.5V. A single DC gate
supply connected to Vg will bias all gain stages. Muting
can be accomplished by setting Vg and /or Vg to the
pinch-off voltage Vp.
An optional output power detector network is also
provided. The differential voltage between the Det-Ref
and Det-Out pads can be correlated with the RF power
emerging from the RF output port. The detected voltage
is given by :
V
=
(
ref
−
V
det
)
−
V
ofs
V
Assembly Techniques
The backside of the MMIC chip is RF ground. For mi-
crostrip applications the chip should be attached directly
to the ground plane (e.g. circuit carrier or heatsink) using
electrically conductive epoxy
[1,2]
.
For best performance, the topside of the MMIC should be
brought up to the same height as the circuit surrounding
it. This can be accomplished by mounting a gold plate
metal shim (same length and width as the MMIC) under
the chip which is of correct thickness to make the chip
and adjacent circuit the same height. The amount of
epoxy used for the chip and/or shim attachment should
be just enough to provide a thin fillet around the bottom
perimeter of the chip or shim. The ground plain should
be free of any residue that may jeopardize electrical or
mechanical attachment.
The location of the RF bond pads is shown in Figure
12. Note that all the RF input and output ports are in a
Ground-Signal configuration.
RF connections should be kept as short as reasonable to
minimize performance degradation due to undesirable
series inductance. A single bond wire is normally suf-
ficient for signal connections, however double bonding
with 0.7 mil gold wire or use of gold mesh is recom-
mended for best performance, especially near the high
end of the frequency band.
Thermosonic wedge bonding is preferred method for
wire attachment to the bond pads. Gold mesh can be
attached using a 2 mil round tracking tool and a tool
force of approximately 22 grams and a ultrasonic power
of roughly 55 dB for a duration of 76 +/- 8 mS. The guided
wedge at an untrasonic power level of 64 dB can be used
for 0.7 mil wire. The recommended wire bond stage tem-
perature is 150 +/- 2°C.
Caution should be taken to not exceed the Absolute
Maximum Rating for assembly temperature and time.
The chip is 100um thick and should be handled with care.
This MMIC has exposed air bridges on the top surface and
should be handled by the edges or with a custom collet
(do not pick up the die with a vacuum on die center).
This MMIC is also static sensitive and ESD precautions
should be taken.
Notes:
1. Ablebond 84-1 LM1 silver epoxy is recommended.
2. Eutectic attach is not recommended and may jeopardize reliability
of the device.
where
V
ref
is the voltage at the
DET
_
R
port,
V
det
is a
voltage at the
DET
_
O
port, and
V
ofs
is the zero-input-
power offset voltage. There are three methods to
calculate :
1.
V
ofs
can be measured before each detector measure-
ment (by removing or switching off the power source
and measuring ). This method gives an error due to
temperature drift of less than 0.01dB/50°C.
2.
V
ofs
can be measured at a single reference temperature.
The drift error will be less than 0.25dB.
3.
V
ofs
can either be characterized over temperature and
stored in a lookup table, or it can be measured at two
temperatures and a linear fit used to calculate at any
temperature. This method gives an error close to the
method #1.
The RF ports are AC coupled at the RF input to the first
stage and the RF output of the final stage. No ground
wired are needed since ground connections are made
with plated through-holes to the backside of the device.
5
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