FLM7179-12F
C-Band Internally Matched FET
FEATURES
•
•
•
•
•
•
•
High Output Power: P1dB = 41.5dBm (Typ.)
High Gain: G1dB = 9.0dB (Typ.)
High PAE:
η
add = 38% (Typ.)
Low IM3 = -46dBc@Po = 30.5dBm
Broad Band: 7.1 ~ 7.9GHz
Impedance Matched Zin/Zout = 50Ω
Hermetically Sealed Package
DESCRIPTION
The FLM7179-12F is a power GaAs FET that is internally matched for
standard communication bands to provide optimum power and gain in a
50 ohm system.
Fujitsu’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)
Item
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
Channel Temperature
Symbol
VDS
VGS
PT
Tstg
Tch
Tc = 25°C
Condition
Rating
15
-5
57.6
-65 to +175
175
Unit
V
V
W
°C
°C
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 10 volts.
2. The forward and reverse gate currents should not exceed 32.0 and -5.6 mA respectively with
gate resistance of 50Ω.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)
Item
Saturated Drain Current
Transconductance
Pinch-off Voltage
Gate Source Breakdown Voltage
Output Power at 1dB G.C.P.
Power Gain at 1dB G.C.P.
Drain Current
Power-added Efficiency
Gain Flatness
3rd Order Intermodulation
Distortion
Thermal Resistance
Channel Temperature Rise
CASE STYLE:
IK
Symbol
IDSS
gm
Vp
VGSO
P1dB
G1dB
Idsr
η
add
∆G
IM3
Rth
∆T
ch
f = 7.9 GHz,
∆f
= 10 MHz
2-Tone Test
Pout = 30.5dBm S.C.L.
Channel to Case
10V x Idsr x Rth
VDS =10V,
IDS
=
0.65IDSS (Typ.),
f = 7.1 ~ 7.9 GHz,
ZS=ZL= 50 ohm
Test Conditions
VDS = 5V, VGS = 0V
VDS = 5V, IDS = 3250mA
VDS = 5V, IDS = 250mA
IGS = -250µA
Min.
-
-
-0.5
-5.0
40.5
8.0
-
-
-
-44
-
-
Limit
Typ. Max.
5000 7500
5000
-1.5
-
41.5
9.0
-
-3.0
-
-
-
Unit
mA
mS
V
V
dBm
dB
mA
%
dB
dBc
°C/W
°C
3250 4000
38
-
-46
2.3
-
-
±0.6
-
2.6
80
G.C.P.: Gain Compression Point, S.C.L.: Single Carrier Level
Edition 1.2
August 1999
1
FLM7179-12F
C-Band Internally Matched FET
POWER DERATING CURVE
OUTPUT POWER & IM3 vs. INPUT POWER
36
Output Power (S.C.L.) (dBm)
VDS=10V
f1 = 7.9 GHz
f2 = 7.91 GHz
2-tone test
Pout
Total Power Dissipation (W)
60
45
30
15
34
32
30
28
26
24
22
20
18
-25
-30
IM3 (dBc)
η
add (%)
-35
-40
IM3
-45
-50
-55
-60
0
50
100
150
200
Case Temperature (°C)
12 14 16 18 20 22 24 26
Input Power (S.C.L.) (dBm)
S.C.L.: Single Carrier Level
OUTPUT POWER vs. FREQUENCY
VDS=10V
P1dB
Pin=33dBm
OUTPUT POWER vs. INPUT POWER
VDS=10V
f = 7.5 GHz
50
Pout
43
42
Output Power (dBm)
41
40
39
38
37
36
35
42
Output Power (dBm)
40
38
36
34
32
7.9
30
31dBm
40
30
η
add
29dBm
20
10
0
26dBm
7.1
7.3
7.5
7.7
22
24
26
28
30
32
Frequency (GHz)
Input Power (dBm)
2
FLM7179-12F
C-Band Internally Matched FET
+j50
+j25
+j100
S11
S22
7.5
7.3
+90°
S21
S12
7.7
7.5
7.7
7.9
6.9 GHz
+j10
7.9
7.1
7.3
+j250
7.1
7.1
250
7.5
7.3
8.0
0
25
7.7
7.5
7.3
8.0
180°
4
3
2
6.9 GHz
1
7.9
8.0
SCALE FOR |S21|
6.9 GHz
0°
-j10
8.0
7.1
7.9
7.7
-j250
0.1
-j25
-j50
-j100
0.2
-90°
S-PARAMETERS
VDS = 10V, IDS = 3250mA
FREQUENCY
(MHZ)
6900
7000
7100
7200
7300
7400
7500
7600
7700
7800
7900
8000
S11
MAG
.425
.418
.424
.439
.460
.483
.502
.520
.535
.546
.554
.560
S21
ANG
99.1
76.0
58.4
38.0
19.0
0.7
-16.4
-33.0
-49.4
-65.3
-80.8
-96.4
S12
ANG
MAG
.056
.060
.063
.067
.072
.074
.077
.077
.079
.078
.078
.078
SCALE FOR |S12|
6.9 GHz
S22
ANG
156.4
141.9
131.9
118.1
101.9
88.1
73.5
59.3
44.3
28.8
12.6
-1.3
MAG
3.694
3.616
3.553
3.477
3.409
3.336
3.262
3.180
3.094
3.007
2.913
2.819
MAG
.408
.398
.378
.347
.304
.252
.190
.127
.062
.023
.073
.129
ANG
-64.4
-72.6
-78.5
-86.9
-96.1
-106.9
-118.4
-133.2
-154.6
107.8
40.9
18.5
-164.7
179.1
167.2
151.7
136.2
120.6
104.8
89.3
73.5
57.6
41.8
25.7
Download S-Parameters, click here
3
FLM7179-12F
C-Band Internally Matched FET
Case Style "IK"
Metal-Ceramic Hermetic Package
2.0 Min.
(0.079)
1
0.1
(0.004)
2
0.6
(0.024)
14.9
(0.587)
2.0 Min.
(0.079)
4-R 1.3±0.15
(0.051)
3
2.4±0.15
(0.094)
5.5 Max.
(0.217)
1.4
(0.055)
17.4±0.3
(0.685)
8.0±0.2
(0.315)
1. Gate
2. Source (Flange)
3. Drain
Unit: mm(inches)
20.4±0.3
(0.803)
24±0.5
(0.945)
For further information please contact:
FUJITSU COMPOUND SEMICONDUCTOR, INC.
2355 Zanker Rd.
San Jose, CA 95131-1138, U.S.A.
Phone: (408) 232-9500
FAX: (408) 428-9111
www.fcsi.fujitsu.com
FUJITSU MICROELECTRONICS, LTD.
Compound Semiconductor Division
Network House
Norreys Drive
Maidenhead, Berkshire SL6 4FJ
Phone:+44 (0)1628 504800
FAX:+44 (0)1628 504888
CAUTION
Fujitsu Compound Semiconductor Products contain
gallium arsenide
(GaAs)
which can be hazardous to the human body and the environment.
For safety, observe the following procedures:
• Do not put these products into the mouth.
• Do not alter the form of this product into a gas, powder, or liquid
through burning, crushing, or chemical processing as these by-products
are dangerous to the human body if inhaled, ingested, or swallowed.
• Observe government laws and company regulations when discarding this
product. This product must be discarded in accordance with methods
specified by applicable hazardous waste procedures.
Fujitsu Limited reserves the right to change products and specifications without notice.
The information does not convey any license under rights of Fujitsu Limited or others.
© 1999 FUJITSU COMPOUND SEMICONDUCTOR, INC.
Printed in U.S.A. FCSI0599M200
4
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