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BU406D

产品描述Power Bipolar Transistor, 7A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN
产品类别分立半导体    晶体管   
文件大小61KB,共1页
制造商Central Semiconductor
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BU406D概述

Power Bipolar Transistor, 7A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN

BU406D规格参数

参数名称属性值
是否无铅含铅
是否Rohs认证不符合
厂商名称Central Semiconductor
零件包装代码TO-220AB
包装说明TO-220, 3 PIN
针数3
Reach Compliance Codeunknown
ECCN代码EAR99
外壳连接COLLECTOR
最大集电极电流 (IC)7 A
集电极-发射极最大电压200 V
配置SINGLE
最小直流电流增益 (hFE)10
JEDEC-95代码TO-220AB
JESD-30 代码R-PSFM-T3
JESD-609代码e0
元件数量1
端子数量3
最高工作温度150 °C
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式FLANGE MOUNT
峰值回流温度(摄氏度)NOT SPECIFIED
极性/信道类型NPN
最大功率耗散 (Abs)60 W
认证状态Not Qualified
表面贴装NO
端子面层Tin/Lead (Sn/Pb)
端子形式THROUGH-HOLE
端子位置SINGLE
处于峰值回流温度下的最长时间NOT SPECIFIED
晶体管元件材料SILICON
标称过渡频率 (fT)10 MHz
Base Number Matches1

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BU406D相似产品对比

BU406D 2N6499 BU407D MJE803T MJE700T MJE801T MJE13006 MJE802T MJE703T D45H11
描述 Power Bipolar Transistor, 7A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN Power Bipolar Transistor, 5A I(C), 350V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN Power Bipolar Transistor, 7A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN Power Bipolar Transistor, 8A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN
是否无铅 含铅 含铅 含铅 含铅 含铅 含铅 含铅 含铅 含铅 含铅
是否Rohs认证 不符合 不符合 不符合 不符合 不符合 不符合 不符合 不符合 不符合 不符合
零件包装代码 TO-220AB TO-220AB TO-220AB TO-220AB TO-220AB TO-220AB TO-220AB TO-220AB TO-220AB TO-220AB
包装说明 TO-220, 3 PIN TO-220, 3 PIN TO-220, 3 PIN TO-220, 3 PIN TO-220, 3 PIN TO-220, 3 PIN TO-220, 3 PIN TO-220, 3 PIN TO-220, 3 PIN TO-220, 3 PIN
针数 3 3 3 3 3 3 3 3 3 3
Reach Compliance Code unknown _compli unknown not_compliant not_compliant not_compliant unknown unknown unknown not_compliant
外壳连接 COLLECTOR COLLECTOR COLLECTOR COLLECTOR COLLECTOR COLLECTOR COLLECTOR COLLECTOR COLLECTOR COLLECTOR
最大集电极电流 (IC) 7 A 5 A 7 A 4 A 4 A 4 A 8 A 4 A 4 A 10 A
集电极-发射极最大电压 200 V 350 V 150 V 80 V 60 V 60 V 300 V 80 V 80 V 80 V
配置 SINGLE SINGLE SINGLE DARLINGTON DARLINGTON DARLINGTON SINGLE DARLINGTON DARLINGTON SINGLE
最小直流电流增益 (hFE) 10 10 10 750 750 750 5 750 750 40
JEDEC-95代码 TO-220AB TO-220AB TO-220AB TO-220AB TO-220AB TO-220AB TO-220AB TO-220AB TO-220AB TO-220AB
JESD-30 代码 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3
JESD-609代码 e0 e0 e0 e0 e0 e0 e0 e0 e0 e0
元件数量 1 1 1 1 1 1 1 1 1 1
端子数量 3 3 3 3 3 3 3 3 3 3
最高工作温度 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 140 °C
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
峰值回流温度(摄氏度) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
极性/信道类型 NPN NPN NPN NPN PNP NPN NPN NPN PNP PNP
最大功率耗散 (Abs) 60 W 80 W 60 W 50 W 50 W 50 W 80 W 50 W 50 W 50 W
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
表面贴装 NO NO NO NO NO NO NO NO NO NO
端子面层 Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
端子形式 THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
端子位置 SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
处于峰值回流温度下的最长时间 NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
晶体管元件材料 SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON
标称过渡频率 (fT) 10 MHz 5 MHz 10 MHz 1 MHz 1 MHz 1 MHz 4 MHz 1 MHz 1 MHz 40 MHz
厂商名称 Central Semiconductor - Central Semiconductor Central Semiconductor Central Semiconductor Central Semiconductor Central Semiconductor Central Semiconductor Central Semiconductor Central Semiconductor
ECCN代码 EAR99 - EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
Base Number Matches 1 1 1 1 1 1 - - - -
晶体管应用 - AMPLIFIER - AMPLIFIER AMPLIFIER AMPLIFIER SWITCHING AMPLIFIER AMPLIFIER -
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