1N4151
Vishay Semiconductors
formerly General Semiconductor
Small-Signal Diode
DO-204AH (DO-35 Glass)
Features
• Silicon Epitaxial Planar Diode
• Fast switching diode
• This diode is also available in other case styles
including the SOD-123 case with the type
designation 1N4151W, and the MiniMELF case with
the type designation LL4151.
Mechanical Data
Dimensions in inches
and (millimeters)
Case:
DO-35 Glass Case
Weight:
approx. 0.13g
Packaging Codes/Options:
F2/10K per Ammo tape (52mm tape), 50K/box
F3/10K per 13” reel (52mm tape), 50K/box
Maximum Ratings and Thermal Characteristics
Parameter
Reverse Voltage
Peak Reverse Voltage
Average Rectified Current
Half Wave Rectification with Resistive Load
at Tamb = 25°C and f
≥
50Hz
(1)
Surge Forward Current at t < 1s and T
j
= 25°C
Power Dissipation at T
amb
= 25°C
(1)
Thermal Resistance Junction to Ambient Air
(1)
Junction Temperature
Storage Temperature Range
Symbol
V
R
V
RM
I
F(AV)
I
FSM
P
tot
R
θJA
T
j
T
S
(T
J
= 25°C unless otherwise noted)
(T
A
= 25°C unless otherwise noted)
Limit
50
75
150
500
500
350
175
–65 to +175
Unit
V
V
mA
mA
mW
°C/W
°C
°C
Electrical Characteristics
Parameter
Reverse Breakdown Voltage
Forward Voltage
Leakage Current
Capacitance
Symbol
V
(BR)R
V
F
I
R
C
tot
Test Condition
I
R
= 5µA (pulsed)
I
F
= 50mA
V
R
= 50V
V
R
= 50V, T
j
= 150°C
V
F
= V
R
= 0V
I
F
= 10mA to I
R
= 10mA
to I
R
= 1mA
I
F
= 10mA to I
R
= 1mA
V
R
= 6V, R
L
= 100Ω
f = 100MHz, V
RF
= 2V
Min
75
—
—
—
—
—
—
0.45
Typ
—
—
—
—
—
—
—
—
Max
—
1.0
50
50
2
4
Unit
V
V
nA
µA
pF
Reverse Recovery Time
t
rr
η
½
ns
2
—
—
Rectification Efficiency
Note:
(1) Valid provided that at a distance of 8 mm from case are kept at ambient temperature.
Document Number 88106
13-May-02
www.vishay.com
1
1N4151
Vishay Semiconductors
formerly General Semiconductor
Ratings and
Characteristic Curves
(T
A
= 25°C unless otherwise noted)
Rectification Efficiency Measurement Circuit
Document Number 88106
13-May-02
www.vishay.com
3
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