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BZT52-C4V3D3

产品描述DIODE 4.3 V, 0.41 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, PLASTIC, SO-2, Voltage Regulator Diode
产品类别分立半导体    二极管   
文件大小399KB,共9页
制造商Vishay(威世)
官网地址http://www.vishay.com
标准
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BZT52-C4V3D3概述

DIODE 4.3 V, 0.41 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, PLASTIC, SO-2, Voltage Regulator Diode

BZT52-C4V3D3规格参数

参数名称属性值
是否无铅不含铅
是否Rohs认证符合
厂商名称Vishay(威世)
零件包装代码SOD
包装说明R-PDSO-G2
针数2
Reach Compliance Codeunknown
配置SINGLE
二极管元件材料SILICON
二极管类型ZENER DIODE
JESD-30 代码R-PDSO-G2
JESD-609代码e3
湿度敏感等级1
元件数量1
端子数量2
最高工作温度150 °C
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式SMALL OUTLINE
峰值回流温度(摄氏度)260
极性UNIDIRECTIONAL
最大功率耗散0.41 W
认证状态Not Qualified
标称参考电压4.3 V
表面贴装YES
技术ZENER
端子面层MATTE TIN
端子形式GULL WING
端子位置DUAL
处于峰值回流温度下的最长时间40
最大电压容差5%
工作测试电流5 mA
Base Number Matches1

文档预览

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BZT52 Series
Zener Diodes
VZ Range
2.4 to 75
Power Dissipation
410mW
SOD-123
.022 (0.55)
Mounting Pad Layout
0.094 (2.40)
0.055 (1.40)
0.055 (1.40)
Cathode Band
.152 (3.85)
.140 (3.55)
.112 (2.85)
.100 (2.55)
Top View
Dimensions in inches
and (millimeters)
.053 (1.35)
max.
.004 (0.1)
max.
006 (0.15)
max.
.067 (1.70)
.055 (1.40)
Features
• Silicon Planar Power Zener Diodes
• The Zener voltages are graded according to the
international E 24 standard. Standard Zener volt-
age tolerance is ±5%. Replace suffix “C” with “B”
for ±2% tolerance. Other tolerances and other
Zener voltages are available upon request.
• These diodes are also available in other case
styles and other configurations including: the
SOT-23 case with type designation BZX84 series,
the dual zener diode common anode configuration
in the SOT-23 case with type
designation AZ23 series and the dual zener diode
common cathode configuration in the SOT-23
case with type designation DZ23 series.
Mechanical Data
Case:
SOD-123 Plastic Case
Weight:
approx. 0.01g
Packaging Codes/Options:
D3 / 10K per 13” reel (8mm tape)
D4 / 3K per 7” reel (8mm tape)
Maximum Ratings and Thermal Characteristics
(T
Parameter
Zener Current (see Table “Characteristics”)
Power Dissipation at Tamb = 25°C
Thermal Resistance
Junction to Ambient Air
Junction Temperature
Storage Temperature Range
Notes:
(1) Diode on Ceramic Substrate 0.7mm; 2.5mm
2
area
(2) Valid provided that electrodes are kept at ambient temperature
A
= 25°C unless otherwise noted)
Symbol
Value
410
(1)
300
(2)
150
–65 to +150
Unit
P
tot
R
ΘJA
T
j
T
S
mW
°C/W
°C
°C
6/5/01

 
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