Am41PDS3224D
Data Sheet
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Publication Number
26085
Revision
A
Amendment
+1
Issue Date
May 13, 2003
PRELIMINARY
Am41PDS3224D
Stacked Multi-Chip Package (MCP) Flash Memory and SRAM
Am29PDS322D 32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation,
Page Mode Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM
DISTINCTIVE CHARACTERISTICS
MCP Features
■
Power supply voltage of 1.8 to 2.2 volt
■
High performance
— Access time as fast as 100 ns flash, 70 ns SRAM
—
—
—
—
24 mA active read current at 10 MHz for initial page read
0.5 mA active read current at 10 MHz for intra-page read
1 mA active read current at 20 MHz for intra-page read
200 nA in standby or automatic sleep mode
■
Package
— 73-Ball FBGA
■
Minimum 1 million write cycles guaranteed per sector
■
20 year data retention at 125°C
— Reliable operation for the life of the system
■
Operating Temperature
— –40°C to +85°C
SOFTWARE FEATURES
■
Data Management Software (DMS)
— AMD-supplied software manages data programming,
enabling EEPROM emulation
— Eases historical sector erase flash limitations
Flash Memory Features
ARCHITECTURAL ADVANTAGES
■
Simultaneous Read/Write operations
— Data can be continuously read from one bank while
executing erase/program functions in other bank.
— Zero latency between read and write operations
■
Erase Suspend/Erase Resume
■
Data# Polling and Toggle Bits
■
Unlock Bypass Program command
— Reduces overall programming time when issuing multiple
program command sequences
■
Page Mode Operation
— 4 word page allows fast asynchronous reads
■
Dual Bank architecture
— One 4 Mbit bank and one 28 Mbit bank
HARDWARE FEATURES
■
Any combination of sectors can be erased
■
Ready/Busy# output (RY/BY#)
■
Hardware reset pin (RESET#)
■
WP#/ACC input pin
— Write protect (WP#) function allows protection of two
outermost boot sectors, regardless of sector protect status
— Acceleration (ACC) function accelerates program timing
■
SecSi (Secured Silicon) Sector: Extra 64 KByte sector
—
Factory locked and identifiable:
16 byte Electronic Serial
Number available for factory secure, random ID; verifiable
as factory locked through autoselect function. ExpressFlash
option allows entire sector to be available for
factory-secured data
—
Customer lockable:
Can be read, programmed, or erased
just like other sectors. Once locked, data cannot be changed
■
Sector protection
— Hardware method of locking a sector, either in-system or
using programming equipment, to prevent any program or
erase operation within that sector
— Temporary Sector Unprotect allows changing data in
protected sectors in-system
■
Zero Power Operation
— Sophisticated power management circuits reduce power
consumed during inactive periods to nearly zero.
■
Top or bottom boot block
■
Manufactured on 0.23 µm process technology
■
Compatible with JEDEC standards
— Pinout and software compatible with single-power-supply
flash standard
SRAM Features
■
Power dissipation
— Operating: 2 mA typical
— Standby: 0.5 µA typical
PERFORMANCE CHARACTERISTICS
■
High performance
— Random access time of 100 ns at 1.8 V to 2.2 V V
CC
■
Ultra low power consumption (typical values)
— 2.5 mA active read current at 1 MHz for initial page read
■
■
■
■
CE1s# and CE2s Chip Select
Power down features using CE1s# and CE2s
Data retention supply voltage: 1.0 to 2.2 volt
Byte data control: LB#s (DQ7–DQ0), UB#s (DQ15–DQ8)
This document contains information on a product under development at Advanced Micro Devices. The information
is intended to help you evaluate this product. AMD reserves the right to change or discontinue work on this proposed
product without notice.
Publication#
26085
Rev:
A
Amendment/+1
Issue Date:
May 13, 2002
Refer to AMD’s Website (www.amd.com) for the latest information.
P R E L I M I N A R Y
GENERAL DESCRIPTION
The Am29PDS322D is a 32 Mbit, 1.8 V-only Flash
memory organized as 2,097,152 words of 16 bits
each. The device is designed to be programmed in
system with standard system 1.8 V V
CC
supply. This
d evice ca n a lso be re prog ra mm ed in stand ard
EPROM programmers.
The Am29PDS322D offers fast page access time of
40 ns with random access time of 100 ns (at 1.8 V to
2.2 V V
CC
), allowing operation of high-speed micropro-
cessors without wait states. To eliminate bus conten-
tion the device has separate chip enable (CE), write
enable (WE), and output enable (OE) controls. The
page size is 4 words.
The device requires only a
single 1.8 volt power sup-
ply
for both read and write functions. Internally
generated and regulated voltages are provided for the
program and erase operations.
other flash sector, or may permanently lock their own
code there.
DMS (Data Management Software)
allows systems
to easily take advantage of the advanced architecture
of the simultaneous read/write product line by allowing
removal of EEPROM devices. DMS will also allow the
system software to be simplified, as it will perform all
functions necessary to modify data in file structures,
as opposed to single-byte modifications. To write or
update a particular piece of data (a phone number or
configuration data, for example), the user only needs
to state which piece of data is to be updated, and
where the updated data is located in the system. This
is a n a d v a n t a g e c o m p a re d to sy st e m s w h e re
user-written software must keep track of the old data
location, status, logical to physical translation of the
data onto the Flash memory device (or memory de-
vices), and more. Using DMS, user-written software
does not need to interface with the Flash memory di-
rectly. Instead, the user's software accesses the Flash
memory by calling one of only six functions. AMD pro-
vides this software to simplify system design and soft-
ware integration efforts.
The device offers complete compatibility with the
JEDEC single-power-supply Flash command set
standard.
Commands are written to the command
register using standard microprocessor write timings.
Reading data out of the device is similar to reading
from other Flash or EPROM devices.
The host system can detect whether a program or
erase operation is complete by using the device
sta-
tus bits:
RY/BY# pin, DQ7 (Data# Polling) and
DQ6/DQ2 (toggle bits). After a program or erase cycle
has been completed, the device automatically returns
to the read mode.
The
sector erase architecture
allows memory sec-
tors to be erased and reprogrammed without affecting
the data contents of other sectors. The device is fully
erased when shipped from the factory.
Hardware data protection
measures include a low
V
CC
detector that automatically inhibits write opera-
tions during power transitions. The
hardware sector
protection
feature disables both program and erase
operations in any combination of the sectors of mem-
ory. This can be achieved in-system or via program-
ming equipment.
The device offers two power-saving features. When
addresses have been stable for a specified amount of
time, the device enters the
automatic sleep mode.
Th e system can also place the de vice into the
standby mode.
Power consumption is greatly re-
duced in both modes.
Simultaneous Read/Write Operations with
Zero Latency
The Simultaneous Read/Write architecture provides
simultaneous operation
by dividing the memory
space into two banks. The device can improve overall
system performance by allowing a host system to pro-
gram or erase in one bank, then immediately and si-
multaneously read from the other bank, with zero
latency. This releases the system from waiting for the
completion of program or erase operations.
The device is divided as shown in the following table:
Bank 1 Sectors
Quantity
8
7
Size
4 Kwords
56
32 Kwords
4 Mbits total
28 Mbits total
32 Kwords
Bank 2 Sectors
Quantity
Size
Am29PDS322D Features
The
SecSi (Secured Silicon) Sector
is an extra 64
KByte sector capable of being permanently locked by
AMD or customers. The
SecSi Indicator Bit
(DQ7) is
permanently set to a 1 if the part is
factory locked,
and set to a 0 if
customer lockable.
This way, cus-
tomer lockable parts can never be used to replace a
factory locked part.
Factory locked parts provide several options. The
SecSi Sector may store a secure, random 16 byte
ESN (Electronic Serial Number), customer code (pro-
grammed through AMD’s ExpressFlash service), or
both. Customer Lockable parts may utilize the SecSi
Sector as bonus space, reading and writing like any
2
Am41PDS3224D
May 13, 2002
P R E L I M I N A R Y
TABLE OF CONTENTS
Product Selector Guide . . . . . . . . . . . . . . . . . . . . . 5
MCP Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . 5
Flash Memory Block Diagram. . . . . . . . . . . . . . . . 6
Connection Diagram . . . . . . . . . . . . . . . . . . . . . . . . 7
Special Package Handling Instructions .................................... 7
Pin Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Logic Symbol . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Ordering Information . . . . . . . . . . . . . . . . . . . . . . . 9
MCP Device Bus Operations. . . . . . . . . . . . . . . . 10
Table 1. Device Bus Operations—SRAM Word Mode, CIOs = V
CC
10
Table 2. Device Bus Operations—SRAM Byte Mode, CIOs = V
SS
11
Chip Erase Command Sequence ........................................... 24
Sector Erase Command Sequence ........................................ 25
Erase Suspend/Erase Resume Commands ........................... 25
Figure 5. Erase Operation.............................................................. 26
Table 10. Am29PDS322D Command Definitions ........................... 27
Flash Write Operation Status . . . . . . . . . . . . . . . 28
DQ7: Data# Polling ................................................................. 28
Figure 6. Data# Polling Algorithm .................................................. 28
RY/BY#: Ready/Busy# ............................................................ 29
DQ6: Toggle Bit I .................................................................... 29
Figure 7. Toggle Bit Algorithm........................................................ 29
Flash Device Bus Operations . . . . . . . . . . . . . . . 12
Requirements for Reading Array Data ................................... 12
Read Mode ............................................................................. 12
Random Read (Non-Page Mode Read) .............................. 12
Page Mode Read .................................................................... 12
Table 3. Page Word Mode ..............................................................12
DQ2: Toggle Bit II ................................................................... 30
Reading Toggle Bits DQ6/DQ2 ............................................... 30
DQ5: Exceeded Timing Limits ................................................ 30
DQ3: Sector Erase Timer ....................................................... 30
Table 11. Write Operation Status ................................................... 31
Writing Commands/Command Sequences ............................ 12
Accelerated Program Operation .......................................... 12
Autoselect Functions ........................................................... 13
Simultaneous Read/Write Operations with Zero Latency ....... 13
Standby Mode ........................................................................ 13
Automatic Sleep Mode ........................................................... 13
RESET#: Hardware Reset Pin ............................................... 13
Output Disable Mode .............................................................. 14
Table 4. Am29PDS322DT Top Boot Sector Addresses ..................14
Table 5. Am29PDS322DT Top Boot SecSi Sector Address ...........15
Table 6. Am29PDS322DB Bottom Boot Sector Addresses ............15
Am29PDS322DB Bottom Boot SecSi Sector Address.................... 17
Absolute Maximum Ratings . . . . . . . . . . . . . . . . 32
Operating Ranges . . . . . . . . . . . . . . . . . . . . . . . . . 32
Industrial (I) Devices ............................................................ 32
V
CC
f/V
CC
s Supply Voltage ................................................... 32
Flash DC Characteristics . . . . . . . . . . . . . . . . . . 33
CMOS Compatible .................................................................. 33
SRAM DC and Operating Characteristics . . . . . 34
Figure 10. I
CC1
Current vs. Time (Showing Active and Automatic
Sleep Currents) .............................................................................. 35
Figure 11. Typical I
CC1
vs. Frequency ............................................ 35
Test Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . 36
Figure 12. Test Setup.................................................................... 36
Table 12. Test Specifications ......................................................... 36
Autoselect Mode ..................................................................... 17
Sector/Sector Block Protection and Unprotection .................. 17
Table 8. Top Boot Sector/Sector Block Addresses for Protection/Un-
protection ........................................................................................17
Table 9. Bottom Boot Sector/Sector Block Addresses for Protec-
tion/Unprotection .............................................................................18
Key To Switching Waveforms . . . . . . . . . . . . . . . 36
Figure 13. Input Waveforms and Measurement Levels ................. 36
AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . 37
SRAM CE#s Timing ................................................................ 37
Figure 14. Timing Diagram for Alternating
Between SRAM to Flash ................................................................ 37
Figure 15. Conventional Read Operation Timings ......................... 38
Figure 16. Page Mode Read Timings ............................................ 39
Write Protect (WP#) ................................................................ 18
Temporary Sector/Sector Block Unprotect ............................. 18
Figure 1. Temporary Sector Unprotect Operation........................... 19
Figure 2. In-System Sector/Sector Block Protect and Unprotect Algo-
rithms .............................................................................................. 20
Hardware Reset (RESET#) .................................................... 40
Figure 17. Reset Timings ............................................................... 40
Flash Erase and Program Operations .................................... 41
Figure 18. Program Operation Timings..........................................
Figure 19. Accelerated Program Timing Diagram..........................
Figure 20. Chip/Sector Erase Operation Timings ..........................
Figure 21. Back-to-back Read/Write Cycle Timings ......................
Figure 22. Data# Polling Timings (During Embedded Algorithms).
Figure 23. Toggle Bit Timings (During Embedded Algorithms)......
Figure 24. DQ2 vs. DQ6.................................................................
42
42
43
44
44
45
45
SecSi (Secured Silicon) Sector Flash Memory Region .......... 21
Factory Locked: SecSi Sector Programmed and Protected
at the Factory ...................................................................... 21
Hardware Data Protection ...................................................... 21
Low V
CC
Write Inhibit ........................................................... 21
Write Pulse “Glitch” Protection ............................................ 22
Logical Inhibit ...................................................................... 22
Power-Up Write Inhibit ......................................................... 22
Flash Command Definitions . . . . . . . . . . . . . . . . 22
Reading Array Data ................................................................ 22
Reset Command ..................................................................... 22
Autoselect Command Sequence ............................................ 22
Enter SecSi Sector/Exit SecSi Sector Command Sequence .. 23
Word Program Command Sequence ..................................... 23
Unlock Bypass Command Sequence .................................. 23
Figure 3. Unlock Bypass Algorithm ................................................. 24
Figure 4. Program Operation .......................................................... 24
Temporary Sector/Sector Block Unprotect ............................. 46
Figure 25. Temporary Sector/Sector Block Unprotect
Timing Diagram.............................................................................. 46
Figure 26. Sector/Sector Block Protect and Unprotect
Timing Diagram.............................................................................. 47
Alternate CE#f Controlled Erase and Program Operations .... 48
Figure 27. Flash Alternate CE#f Controlled Write (Erase/Program) Op-
eration Timings............................................................................... 49
SRAM AC Characteristics . . . . . . . . . . . . . . . . . . 50
Read Cycle ............................................................................. 50
Figure 28. SRAM Read Cycle—Address Controlled...................... 50
Figure 29. SRAM Read Cycle ........................................................ 51
May 13, 2002
Am41PDS3224D
3
P R E L I M I N A R Y
Write Cycle ............................................................................. 52
Figure 30. SRAM Write Cycle—WE# Control ................................. 52
Figure 31. SRAM Write Cycle—CE1#s Control .............................. 53
Figure 32. SRAM Write Cycle—UB#s and LB#s Control ................ 54
SRAM Data Retention . . . . . . . . . . . . . . . . . . . . . 56
Figure 33. CE1#s Controlled Data Retention Mode....................... 56
Figure 34. CE2s Controlled Data Retention Mode......................... 56
Flash Erase And Programming Performance . . 55
Flash Latchup Characteristics . . . . . . . . . . . . . . 55
Package Pin Capacitance . . . . . . . . . . . . . . . . . . 55
Flash Data Retention . . . . . . . . . . . . . . . . . . . . . . 55
Physical Dimensions . . . . . . . . . . . . . . . . . . . . . . 57
FLB073—73-Ball Fine-Pitch Grid Array 8 x 11.6 mm ............. 57
Revision Summary . . . . . . . . . . . . . . . . . . . . . . . . 58
Revision A (February 18, 2002) .............................................. 58
Revision A+1 (May 13, 2002) ................................................. 58
4
Am41PDS3224D
May 13, 2002
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