Synchronous DRAM, 2MX32, 6ns, CMOS, PDSO86, 0.400 INCH, TSOP2-86
参数名称 | 属性值 |
厂商名称 | SK Hynix(海力士) |
零件包装代码 | TSOP2 |
包装说明 | TSOP2, TSSOP86,.46,20 |
针数 | 86 |
Reach Compliance Code | unknown |
ECCN代码 | EAR99 |
访问模式 | FOUR BANK PAGE BURST |
最长访问时间 | 6 ns |
其他特性 | AUTO/SELF REFRESH |
最大时钟频率 (fCLK) | 100 MHz |
I/O 类型 | COMMON |
交错的突发长度 | 1,2,4,8 |
JESD-30 代码 | R-PDSO-G86 |
JESD-609代码 | e6 |
长度 | 22.238 mm |
内存密度 | 67108864 bit |
内存集成电路类型 | SYNCHRONOUS DRAM |
内存宽度 | 32 |
功能数量 | 1 |
端口数量 | 1 |
端子数量 | 86 |
字数 | 2097152 words |
字数代码 | 2000000 |
工作模式 | SYNCHRONOUS |
最高工作温度 | 85 °C |
最低工作温度 | -40 °C |
组织 | 2MX32 |
输出特性 | 3-STATE |
封装主体材料 | PLASTIC/EPOXY |
封装代码 | TSOP2 |
封装等效代码 | TSSOP86,.46,20 |
封装形状 | RECTANGULAR |
封装形式 | SMALL OUTLINE, THIN PROFILE |
电源 | 3.3 V |
认证状态 | Not Qualified |
刷新周期 | 4096 |
座面最大高度 | 1.2 mm |
自我刷新 | YES |
连续突发长度 | 1,2,4,8,FP |
最大待机电流 | 0.002 A |
最大压摆率 | 0.19 mA |
最大供电电压 (Vsup) | 3.6 V |
最小供电电压 (Vsup) | 3 V |
标称供电电压 (Vsup) | 3.3 V |
表面贴装 | YES |
技术 | CMOS |
温度等级 | INDUSTRIAL |
端子面层 | TIN BISMUTH |
端子形式 | GULL WING |
端子节距 | 0.5 mm |
端子位置 | DUAL |
宽度 | 10.16 mm |
Base Number Matches | 1 |
HY57V653220BTC-10I | HY57V653220BTC-7I | HY57V653220BLTC-7I | HY57V653220BTC-6I | HY57V653220BLTC-10I | HY57V653220BLTC-6I | |
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描述 | Synchronous DRAM, 2MX32, 6ns, CMOS, PDSO86, 0.400 INCH, TSOP2-86 | Synchronous DRAM, 2MX32, 5.5ns, CMOS, PDSO86, 0.400 INCH, TSOP2-86 | Synchronous DRAM, 2MX32, 5.5ns, CMOS, PDSO86, 0.400 INCH, TSOP2-86 | Synchronous DRAM, 2MX32, 5.5ns, CMOS, PDSO86, 0.400 INCH, TSOP2-86 | Synchronous DRAM, 2MX32, 6ns, CMOS, PDSO86, 0.400 INCH, TSOP2-86 | Synchronous DRAM, 2MX32, 5.5ns, CMOS, PDSO86, 0.400 INCH, TSOP2-86 |
厂商名称 | SK Hynix(海力士) | SK Hynix(海力士) | SK Hynix(海力士) | SK Hynix(海力士) | SK Hynix(海力士) | SK Hynix(海力士) |
零件包装代码 | TSOP2 | TSOP2 | TSOP2 | TSOP2 | TSOP2 | TSOP2 |
包装说明 | TSOP2, TSSOP86,.46,20 | TSOP2, TSSOP86,.46,20 | TSOP2, TSSOP86,.46,20 | TSOP2, TSSOP86,.46,20 | TSOP2, TSSOP86,.46,20 | TSOP2, TSSOP86,.46,20 |
针数 | 86 | 86 | 86 | 86 | 86 | 86 |
Reach Compliance Code | unknown | unknown | compliant | unknown | compliant | compliant |
ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
访问模式 | FOUR BANK PAGE BURST | FOUR BANK PAGE BURST | FOUR BANK PAGE BURST | FOUR BANK PAGE BURST | FOUR BANK PAGE BURST | FOUR BANK PAGE BURST |
最长访问时间 | 6 ns | 5.5 ns | 5.5 ns | 5.5 ns | 6 ns | 5.5 ns |
其他特性 | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH |
最大时钟频率 (fCLK) | 100 MHz | 143 MHz | 143 MHz | 166 MHz | 100 MHz | 166 MHz |
I/O 类型 | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON |
交错的突发长度 | 1,2,4,8 | 1,2,4,8 | 1,2,4,8 | 1,2,4,8 | 1,2,4,8 | 1,2,4,8 |
JESD-30 代码 | R-PDSO-G86 | R-PDSO-G86 | R-PDSO-G86 | R-PDSO-G86 | R-PDSO-G86 | R-PDSO-G86 |
JESD-609代码 | e6 | e6 | e6 | e6 | e6 | e6 |
长度 | 22.238 mm | 22.238 mm | 22.238 mm | 22.238 mm | 22.238 mm | 22.238 mm |
内存密度 | 67108864 bit | 67108864 bit | 67108864 bit | 67108864 bit | 67108864 bit | 67108864 bit |
内存集成电路类型 | SYNCHRONOUS DRAM | SYNCHRONOUS DRAM | SYNCHRONOUS DRAM | SYNCHRONOUS DRAM | SYNCHRONOUS DRAM | SYNCHRONOUS DRAM |
内存宽度 | 32 | 32 | 32 | 32 | 32 | 32 |
功能数量 | 1 | 1 | 1 | 1 | 1 | 1 |
端口数量 | 1 | 1 | 1 | 1 | 1 | 1 |
端子数量 | 86 | 86 | 86 | 86 | 86 | 86 |
字数 | 2097152 words | 2097152 words | 2097152 words | 2097152 words | 2097152 words | 2097152 words |
字数代码 | 2000000 | 2000000 | 2000000 | 2000000 | 2000000 | 2000000 |
工作模式 | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS |
最高工作温度 | 85 °C | 85 °C | 85 °C | 85 °C | 85 °C | 85 °C |
最低工作温度 | -40 °C | -40 °C | -40 °C | -40 °C | -40 °C | -40 °C |
组织 | 2MX32 | 2MX32 | 2MX32 | 2MX32 | 2MX32 | 2MX32 |
输出特性 | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE |
封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
封装代码 | TSOP2 | TSOP2 | TSOP2 | TSOP2 | TSOP2 | TSOP2 |
封装等效代码 | TSSOP86,.46,20 | TSSOP86,.46,20 | TSSOP86,.46,20 | TSSOP86,.46,20 | TSSOP86,.46,20 | TSSOP86,.46,20 |
封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
封装形式 | SMALL OUTLINE, THIN PROFILE | SMALL OUTLINE, THIN PROFILE | SMALL OUTLINE, THIN PROFILE | SMALL OUTLINE, THIN PROFILE | SMALL OUTLINE, THIN PROFILE | SMALL OUTLINE, THIN PROFILE |
电源 | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V |
认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
刷新周期 | 4096 | 4096 | 4096 | 4096 | 4096 | 4096 |
座面最大高度 | 1.2 mm | 1.2 mm | 1.2 mm | 1.2 mm | 1.2 mm | 1.2 mm |
自我刷新 | YES | YES | YES | YES | YES | YES |
连续突发长度 | 1,2,4,8,FP | 1,2,4,8,FP | 1,2,4,8,FP | 1,2,4,8,FP | 1,2,4,8,FP | 1,2,4,8,FP |
最大待机电流 | 0.002 A | 0.002 A | 0.002 A | 0.002 A | 0.002 A | 0.002 A |
最大压摆率 | 0.19 mA | 0.22 mA | 0.22 mA | 0.25 mA | 0.19 mA | 0.25 mA |
最大供电电压 (Vsup) | 3.6 V | 3.6 V | 3.6 V | 3.6 V | 3.6 V | 3.6 V |
最小供电电压 (Vsup) | 3 V | 3 V | 3 V | 3 V | 3 V | 3 V |
标称供电电压 (Vsup) | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V |
表面贴装 | YES | YES | YES | YES | YES | YES |
技术 | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
温度等级 | INDUSTRIAL | INDUSTRIAL | INDUSTRIAL | INDUSTRIAL | INDUSTRIAL | INDUSTRIAL |
端子面层 | TIN BISMUTH | TIN BISMUTH | TIN BISMUTH | TIN BISMUTH | TIN BISMUTH | TIN BISMUTH |
端子形式 | GULL WING | GULL WING | GULL WING | GULL WING | GULL WING | GULL WING |
端子节距 | 0.5 mm | 0.5 mm | 0.5 mm | 0.5 mm | 0.5 mm | 0.5 mm |
端子位置 | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL |
宽度 | 10.16 mm | 10.16 mm | 10.16 mm | 10.16 mm | 10.16 mm | 10.16 mm |
Base Number Matches | 1 | 1 | 1 | 1 | 1 | 1 |
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