Am29SL160C
16 Megabit (2 M x 8-Bit/1 M x 16-Bit)
CMOS 1.8 Volt-only Super Low Voltage Flash Memory
DISTINCTIVE CHARACTERISTICS
ARCHITECTURAL ADVANTAGES
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Secured Silicon (SecSi) Sector: 256-byte sector
—
Factory locked and identifiable:
16 bytes available for
secure, random factory Electronic Serial Number;
verifiable as factory locked through autoselect
function. ExpressFlash option allows entire sector to
be available for factory-secured data
—
Customer lockable:
Customer may program own
custom data. Once locked, data cannot be changed
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Zero Power Operation
— Sophisticated power management circuits reduce
power consumed during inactive periods to nearly
zero
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Package options
— 48-ball FBGA
— 48-pin TSOP
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Top or bottom boot block
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Manufactured on 0.32 µm process technology
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Compatible with JEDEC standards
— Pinout and software compatible with single-power-
supply flash standard
PERFORMANCE CHARACTERISTICS
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High performance
— Access time as fast 90 ns
— Program time: 8 µs/word typical using Accelerate
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Ultra low power consumption (typical values)
— 1 mA active read current at 1 MHz
— 5 mA active read current at 5 MHz
— 1 µA in standby or automatic sleep mode
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Minimum 1 million erase cycles guaranteed per
sector
s
20 Year data retention at 125°C
— Reliable operation for the life of the system
SOFTWARE FEATURES
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Supports Common Flash Memory Interface (CFI)
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Erase Suspend/Erase Resume
— Suspends erase operations to allow programming in
same bank
s
Data# Polling and Toggle Bits
— Provides a software method of detecting the status of
program or erase cycles
s
Unlock Bypass Program command
— Reduces overall programming time when issuing
multiple program command sequences
HARDWARE FEATURES
s
Any combination of sectors can be erased
s
Ready/Busy# output (RY/BY#)
— Hardware method for detecting program or erase
cycle completion
s
Hardware reset pin (RESET#)
— Hardware method of resetting the internal state
machine to reading array data
s
WP#/ACC input pin
— Write protect (WP#) function allows protection of two
outermost boot sectors, regardless of sector protect status
— Acceleration (ACC) function accelerates program
timing
s
Sector protection
— Hardware method of locking a sector, either in-
system or using programming equipment, to prevent
any program or erase operation within that sector
— Temporary Sector Unprotect allows changing data in
protected sectors in-system
Publication#
21635
Rev:
C
Amendment/0
Issue Date:
February 21, 2000
Refer to AMD’s Website (www.amd.com) for the latest information.
GENERAL DESCRIPTION
The Am29SL160C is a 16 Mbit, 1.8 V volt-only Flash
memory organized as 2,097,152 bytes or 1,048,576
words. The data appears on DQ0–DQ15. The device
is offered in 48-pin TSOP and 48-ball FBGA pack-
ages. The word-wide data (x16) appears on DQ15–
DQ0; the byte-wide (x8) data appears on DQ7–DQ0.
This device is designed to be programmed and erased
in-system with a single 1.8 volt V
CC
supply. No V
PP
is re-
quired for program or erase operations. The device can
also be programmed in standard EPROM programmers.
The standard device offers access times of 90, 100,
120, or 150 ns, allowing microprocessors to operate
without wait states. To eliminate bus contention the de-
vice has separate chip enable (CE#), write enable
(WE#) and output enable (OE#) controls.
The device requires only a
single 1.8 volt power sup-
ply
for both read and write functions. Internally
generated and regulated voltages are provided for the
program and erase operations.
The device is entirely command set compatible with
the
JEDEC single-power-supply Flash standard.
Commands are written to the command register using
standard microprocessor write timings. Register con-
tents serve as input to an internal state-machine that
controls the erase and programming circuitry. Write
cycles also internally latch addresses and data
needed for the programming and erase operations.
Reading data out of the device is similar to reading
from other Flash or EPROM devices.
Device programming occurs by executing the program
command sequence. This initiates the
Embedded
Program
algorithm—an internal algorithm that auto-
matically times the program pulse widths and verifies
proper cell margin. The
Unlock Bypass
mode facili-
tates faster programming times by requiring only two
write cycles to program data instead of four.
Device erasure occurs by executing the erase com-
mand sequence. This initiates the
Embedded Erase
algorithm—an internal algorithm that automatically
preprograms the array (if it is not already programmed)
before executing the erase operation. During erase,
the device automatically times the erase pulse widths
and verifies proper cell margin.
The host system can detect whether a program or
erase operation is complete by observing the RY/BY#
pin, or by reading the DQ7 (Data# Polling) and DQ6
(toggle)
status bits.
After a program or erase cycle
has been completed, the device is ready to read array
data or accept another command.
The
sector erase architecture
allows memory sec-
tors to be erased and reprogrammed without affecting
the data contents of other sectors. The device is fully
erased when shipped from the factory.
Hardware data protection
measures include a low
V
CC
detector that automatically inhibits write opera-
tions during power transitions. The
hardware sector
protection
feature disables both program and erase
operations in any combination of the sectors of mem-
o r y. T h i s c a n b e a c h i ev e d i n - s y s t e m o r v i a
programming equipment.
The
Erase Suspend
feature enables the user to put
erase on hold for any period of time to read data from,
or program data to, any sector that is not selected for
erasure. True background erase can thus be achieved.
The
hardware RESET# pin
terminates any operation
in progress and resets the internal state machine to
reading array data. The RESET# pin may be tied to the
system reset circuitry. A system reset would thus also
reset the device, enabling the system microprocessor to
read the boot-up firmware from the Flash memory.
The device offers two power-saving features. When
addresses have been stable for a specified amount of
time, the device enters the
automatic sleep mode.
The system can also place the device into the
standby mode.
Power consumption is greatly re-
duced in both modes.
AMD’s Flash technology combines years of Flash
memory manufacturing experience to produce the
highest levels of quality, reliability and cost effective-
ness. The device electrically erases all bits within a
sector simultaneously via Fowler-Nordheim tunneling.
The data is programmed using hot electron injection.
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Am29SL160C
微控制器 MCU
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