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KM23V32005BTY: 产品描述MASK ROM, 4MX8, 100ns, CMOS, PDSO48, 12 X 18 MM, TSOP1-48; 产品类别存储存储; 文件大小98KB，共6页; 制造商SAMSUNG(三星); 官网地址http://www.samsung.com/Products/Semiconductor/

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KM23V32005BTY概述

MASK ROM, 4MX8, 100ns, CMOS, PDSO48, 12 X 18 MM, TSOP1-48

KM23V32005BTY规格参数

参数名称	属性值
是否Rohs认证	不符合
厂商名称	SAMSUNG(三星)
零件包装代码	TSOP1
包装说明	TSOP1, TSSOP48,.71,20
针数	48
Reach Compliance Code	unknown
ECCN代码	EAR99
最长访问时间	100 ns
其他特性	CONFIGURABLE AS 2M X 16; IT CAN ALSO OPERATE AT 3V TO 3.6V SUPPLY
备用内存宽度	8
JESD-30 代码	R-PDSO-G48
JESD-609代码	e0
长度	16.4 mm
内存密度	33554432 bit
内存集成电路类型	MASK ROM
内存宽度	8
功能数量	1
端子数量	48
字数	4194304 words
字数代码	4000000
工作模式	ASYNCHRONOUS
最高工作温度	70 °C
最低工作温度
组织	4MX8
封装主体材料	PLASTIC/EPOXY
封装代码	TSOP1
封装等效代码	TSSOP48,.71,20
封装形状	RECTANGULAR
封装形式	SMALL OUTLINE, THIN PROFILE
并行/串行	PARALLEL
电源	3/3.3 V
认证状态	Not Qualified
座面最大高度	1.2 mm
最大待机电流	0.00003 A
最大压摆率	0.06 mA
最大供电电压 (Vsup)	3.3 V
最小供电电压 (Vsup)	2.7 V
标称供电电压 (Vsup)	3 V
表面贴装	YES
技术	CMOS
温度等级	COMMERCIAL
端子面层	Tin/Lead (Sn/Pb)
端子形式	GULL WING
端子节距	0.5 mm
端子位置	DUAL
宽度	12 mm
Base Number Matches	1

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KM23V32005D(E)TY/KM23S32005D(E)TY

32M-Bit (4Mx8 /2Mx16) CMOS MASK ROM

FEATURES

•

Switchable organization

4,194,304x8(byte mode)

2,097,152x16(word mode)

•

Fast access time

Random Access Time/Page Access Time

3.3V/3.0V Operation : 100/30ns(Max.)

2.5V Operation : 150/50ns(Max.)

•

8 words/ 16 bytes page access

•

Supply voltage

KM23V32005D(E)TY : single +3.0V/ single +3.3V

KM23S32005D(E)TY : single +2.5V

•

Current consumption

Operating : 60mA(Max.)

Standby : 30µA(Max.)

•

Fully static operation

•

All inputs and outputs TTL compatible

•

Three state outputs

•

Package

-. KM23V(S)32005D(E)TY : 48-TSOP1-1218

CMOS MASK ROM

GENERAL DESCRIPTION

The KM23V32005D(E)TY and KM23S32005D(E)TY are fully

static mask programmable ROM fabricated using silicon gate

CMOS process technology, and is organized either as

4,194,304 x8 bit(byte mode) or as 2,097,152x16 bit(word mode)

depending on BHE voltage level.(See mode selection table)

This device includes page read mode function, page read mode

allows 8 words (or 16 bytes) of data to read fast in the same

page, CE and A

~ A

should not be changed.

This device operates with low power supply, and all inputs and

outputs are TTL compatible.

Because of its asynchronous operation, it requires no external

clock assuring extremely easy operation.

It is suitable for use in program memory of microprocessor, and

data memory, character generator.

The KM23V32005D(E)TY and KM23S32005D(E)TY are pack-

aged in a 48-TSOP1.

FUNCTIONAL BLOCK DIAGRAM

Pin Name

-1

BUFFERS

AND

DECODER

MEMORY CELL

MATRIX

(2,097,152x16/

4,194,304x8)

- A

- Q

-1

BUFFERS

AND

DECODER

SENSE AMP.

DATA OUT

BUFFERS

. . .

BHE

CONTROL

LOGIC

BHE

Pin Function

Page Address Inputs

Address Inputs

Data Outputs

Output 15(Word mode)/

LSB Address(Byte mode)

Word/Byte selection

Chip Enable

Output Enable

Power

Ground

KM23V32005BTY相似产品对比

	KM23V32005BTY	KM23S32005BTY	KM23S32005BETY	KM23V32005BETY
描述	MASK ROM, 4MX8, 100ns, CMOS, PDSO48, 12 X 18 MM, TSOP1-48	MASK ROM, 4MX8, 150ns, CMOS, PDSO48, 12 X 18 MM, TSOP1-48	MASK ROM, 4MX8, 150ns, CMOS, PDSO48, 12 X 18 MM, TSOP1-48	MASK ROM, 4MX8, 100ns, CMOS, PDSO48, 12 X 18 MM, TSOP1-48
是否Rohs认证	不符合	不符合	不符合	不符合
零件包装代码	TSOP1	TSOP1	TSOP1	TSOP1
包装说明	TSOP1, TSSOP48,.71,20	TSOP1, TSSOP48,.71,20	TSOP1, TSSOP48,.71,20	TSOP1, TSSOP48,.71,20
针数	48	48	48	48
Reach Compliance Code	unknown	unknown	unknown	unknown
ECCN代码	EAR99	EAR99	EAR99	EAR99
最长访问时间	100 ns	150 ns	150 ns	100 ns
其他特性	CONFIGURABLE AS 2M X 16; IT CAN ALSO OPERATE AT 3V TO 3.6V SUPPLY	CONFIGURABLE AS 2M X 16	CONFIGURABLE AS 2M X 16	CONFIGURABLE AS 2M X 16; IT CAN ALSO OPERATE AT 3V TO 3.6V SUPPLY
备用内存宽度	8	8	8	8
JESD-30 代码	R-PDSO-G48	R-PDSO-G48	R-PDSO-G48	R-PDSO-G48
JESD-609代码	e0	e0	e0	e0
长度	16.4 mm	16.4 mm	16.4 mm	16.4 mm
内存密度	33554432 bit	33554432 bit	33554432 bit	33554432 bit
内存集成电路类型	MASK ROM	MASK ROM	MASK ROM	MASK ROM
内存宽度	8	8	8	8
功能数量	1	1	1	1
端子数量	48	48	48	48
字数	4194304 words	4194304 words	4194304 words	4194304 words
字数代码	4000000	4000000	4000000	4000000
工作模式	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
最高工作温度	70 °C	70 °C	85 °C	85 °C
组织	4MX8	4MX8	4MX8	4MX8
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装代码	TSOP1	TSOP1	TSOP1	TSOP1
封装等效代码	TSSOP48,.71,20	TSSOP48,.71,20	TSSOP48,.71,20	TSSOP48,.71,20
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE
并行/串行	PARALLEL	PARALLEL	PARALLEL	PARALLEL
电源	3/3.3 V	2.5 V	2.5 V	3/3.3 V
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified
座面最大高度	1.2 mm	1.2 mm	1.2 mm	1.2 mm
最大待机电流	0.00003 A	0.000005 A	0.000005 A	0.00003 A
最大压摆率	0.06 mA	0.04 mA	0.04 mA	0.06 mA
最大供电电压 (Vsup)	3.3 V	2.7 V	2.7 V	3.3 V
最小供电电压 (Vsup)	2.7 V	2.3 V	2.3 V	2.7 V
标称供电电压 (Vsup)	3 V	2.5 V	2.5 V	3 V
表面贴装	YES	YES	YES	YES
技术	CMOS	CMOS	CMOS	CMOS
温度等级	COMMERCIAL	COMMERCIAL	OTHER	OTHER
端子面层	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
端子形式	GULL WING	GULL WING	GULL WING	GULL WING
端子节距	0.5 mm	0.5 mm	0.5 mm	0.5 mm
端子位置	DUAL	DUAL	DUAL	DUAL
宽度	12 mm	12 mm	12 mm	12 mm
厂商名称	SAMSUNG(三星)	-	SAMSUNG(三星)	SAMSUNG(三星)

KM23V32005BTY

KM23V32005BTY概述

KM23V32005BTY规格参数

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