MITSUBISHI Nch POWER MOSFET
FK10KM-10
HIGH-SPEED SWITCHING USE
FK10KM-10
OUTLINE DRAWING
10 ± 0.3
6.5 ± 0.3
3 ± 0.3
Dimensions in mm
2.8 ± 0.2
15 ± 0.3
φ
3.2 ± 0.2
14 ± 0.5
3.6 ± 0.3
1.1 ± 0.2
1.1 ± 0.2
0.75 ± 0.15
0.75 ± 0.15
2.54 ± 0.25
2.54 ± 0.25
4.5 ± 0.2
1 2 3
2.6 ± 0.2
w
¡V
DSS ...............................................................................
500V
¡r
DS (ON) (MAX) .............................................................
1.13Ω
¡I
D .........................................................................................
10A
¡V
iso ................................................................................
2000V
¡Integrated
Fast Recovery Diode (MAX.) ....... 150ns
q
q
GATE
w
DRAIN
e
SOURCE
e
TO-220FN
APPLICATION
Servo motor drive, Robot, UPS, Inverter Fluorecent
lamp, etc.
MAXIMUM RATINGS
Symbol
V
DSS
V
GSS
I
D
I
DM
I
S
I
SM
P
D
T
ch
T
stg
V
iso
—
(Tc = 25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
Source current
Source current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Isolation voltage
Weight
V
GS
= 0V
V
DS
= 0V
Conditions
Ratings
500
±30
10
30
10
30
35
–55 ~ +150
–55 ~ +150
2000
2.0
Unit
V
V
A
A
A
A
W
°C
°C
V
rms
g
Feb.1999
AC for 1minute, Terminal to case
Typical value
MITSUBISHI Nch POWER MOSFET
FK10KM-10
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS
Symbol
V
(BR) DSS
V
(BR) GSS
I
GSS
I
DSS
V
GS (th)
r
DS (ON)
V
DS (ON)
y
fs
C
iss
C
oss
C
rss
t
d (on)
t
r
t
d (off)
t
f
V
SD
R
th (ch-c)
t
rr
Parameter
(Tch = 25°C)
Test conditions
I
D
= 1mA, V
GS
= 0V
I
G
=
±100µA,
V
DS
= 0V
V
GS
=
±25V,
V
DS
= 0V
V
DS
= 500V, V
GS
= 0V
I
D
= 1mA, V
DS
= 10V
I
D
= 5A, V
GS
= 10V
I
D
= 5A, V
GS
= 10V
I
D
= 5A, V
DS
= 10V
V
DS
= 25V, V
GS
= 0V, f = 1MHz
Limits
Min.
500
±30
—
—
2
—
—
3.3
—
—
—
—
—
—
—
—
—
—
Typ.
—
—
—
—
3
0.88
4.40
5.5
1100
130
20
20
30
95
35
1.5
—
—
Max.
—
—
±10
1
4
1.13
5.65
—
—
—
—
—
—
—
—
2.0
3.57
150
Unit
V
V
µA
mA
V
Ω
V
S
pF
pF
pF
ns
ns
ns
ns
V
°C/W
ns
Drain-source breakdown voltage
Gate-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Reverse recovery time
V
DD
= 200V, I
D
= 5A, V
GS
= 10V, R
GEN
= R
GS
= 50Ω
I
S
= 5A, V
GS
= 0V
Channel to case
I
S
= 10A, d
is
/d
t
= –100A/µs
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE
50
POWER DISSIPATION P
D
(W)
DRAIN CURRENT I
D
(A)
MAXIMUM SAFE OPERATING AREA
5
3
2
10
1
7
5
3
2
10
0
7
5
3
2
tw=10µs
100µs
1ms
10ms
T
C
= 25°C
Single Pulse
40
30
20
10
0
0
50
100
150
200
10
–1
7
DC
5
0
10 2 3 5 7 10
1
2 3 5 7 10
2
2 3 5 7 10
3
DRAIN-SOURCE VOLTAGE V
DS
(V)
Feb.1999
CASE TEMPERATURE T
C
(°C)
MITSUBISHI Nch POWER MOSFET
FK10KM-10
HIGH-SPEED SWITCHING USE
OUTPUT CHARACTERISTICS
(TYPICAL)
V
GS
= 20V
10V
P
D
= 35W
6V
DRAIN CURRENT I
D
(A)
DRAIN CURRENT I
D
(A)
20
10
OUTPUT CHARACTERISTICS
(TYPICAL)
V
GS
= 20V 10V 6V
T
C
= 25°C
Pulse Test
16
T
C
= 25°C
Pulse Test
8
5V
12
6
8
5V
4
P
D
= 35W
2
4V
4
0
0
10
20
30
40
50
0
0
4
8
12
16
20
DRAIN-SOURCE VOLTAGE V
DS
(V)
DRAIN-SOURCE VOLTAGE V
DS
(V)
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
40
DRAIN-SOURCE ON-STATE
VOLTAGE V
DS (ON)
(V)
DRAIN-SOURCE ON-STATE
RESISTANCE r
DS (ON)
(Ω)
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
2.0
T
C
= 25°C
Pulse Test
1.6
T
C
= 25°C
Pulse Test
32
I
D
= 20A
V
GS
= 10V
20V
24
1.2
16
10A
8
5A
0
4
8
12
16
20
0.8
0.4
0
10
–1
2 3 5 7 10
0
2 3 5 7 10
1
2 3 5 7 10
2
DRAIN CURRENT I
D
(A)
0
GATE-SOURCE VOLTAGE V
GS
(V)
TRANSFER CHARACTERISTICS
(TYPICAL)
20
T
C
= 25°C
V
DS
= 50V
Pulse Test
10
1
7
5
FORWARD TRANSFER
ADMITTANCE
y
fs
(S)
FORWARD TRANSFER ADMITTANCE
VS.DRAIN CURRENT
(TYPICAL)
V
DS
= 10V
Pulse Test
T
C
=25°C
75°C
125°C
DRAIN CURRENT I
D
(A)
16
12
3
2
10
0
7
5
3
2
10
–1 –1
10
2 3
5 7 10
0
8
4
0
0
4
8
12
16
20
2 3
5 7 10
1
GATE-SOURCE VOLTAGE V
GS
(V)
DRAIN CURRENT I
D
(A)
Feb.1999
MITSUBISHI Nch POWER MOSFET
FK10KM-10
HIGH-SPEED SWITCHING USE
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
2
10
3
7
5
3
2
10
2
7
5
3
2
Coss
Ciss
SWITCHING TIME (ns)
SWITCHING CHARACTERISTICS
(TYPICAL)
10
3
7
5
3
2
10
2
7
5
3
2
10
1
10
–1
2 3
5 7 10
0
2 3
Tch = 25°C
V
DD
= 200V
V
GS
= 10V
R
GEN
= R
GS
= 50Ω
CAPACITANCE
Ciss, Coss, Crss (pF)
t
d(off)
t
f
t
r
t
d(on)
5 7 10
1
10
1
Crss
Tch = 25°C
7 f = 1MHz
5 V
GS
= 0V
2 3 5 7 10
0
2 3 5 7 10
1
2 3 5 7 10
2
2 3
DRAIN-SOURCE VOLTAGE V
DS
(V)
DRAIN CURRENT I
D
(A)
GATE-SOURCE VOLTAGE
VS.GATE CHARGE
(TYPICAL)
GATE-SOURCE VOLTAGE V
GS
(V)
SOURCE-DRAIN DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
40
SOURCE CURRENT I
S
(A)
20
Tch = 25°C
I
D
= 10A
16
V
DS
= 100V
200V
12
400V
8
V
GS
= 0V
Pulse Test
T
C
=125°C
32
24
25°C
75°C
8
16
4
0
0
20
40
60
80
100
0
0
0.8
1.6
2.4
3.2
4.0
GATE CHARGE Q
g
(nC)
SOURCE-DRAIN VOLTAGE V
SD
(V)
DRAIN-SOURCE ON-STATE RESISTANCE r
DS (ON)
(25°C)
DRAIN-SOURCE ON-STATE RESISTANCE r
DS (ON)
(t°C)
ON-STATE RESISTANCE VS.
CHANNEL TEMPERATURE
(TYPICAL)
10
1
7
5
3
2
10
0
7
5
3
2
10
–1
0
50
100
150
200
250
5.0
GATE-SOURCE THRESHOLD
VOLTAGE V
GS (th)
(V)
THRESHOLD VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
V
DS
= 10V
I
D
= 1mA
4.0
V
GS
= 10V
I
D
= 1/2I
D
Pulse Test
3.0
2.0
1.0
0
–50
0
50
100
150
CHANNEL TEMPERATURE Tch (°C)
CHANNEL TEMPERATURE Tch (°C)
Feb.1999
MITSUBISHI Nch POWER MOSFET
FK10KM-10
HIGH-SPEED SWITCHING USE
DRAIN-SOURCE BREAKDOWN VOLTAGE V
(BR) DSS
(25°C)
DRAIN-SOURCE BREAKDOWN VOLTAGE V
(BR) DSS
(t°C)
BREAKDOWN VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
V
GS
= 0V
I
D
= 1mA
1.2
REVERSE RECOVERY TIME t
rr
(ns)
1.4
1.0
3
2
10
2
7
5
3
2
10
1 0
10
t
rr
3
2
10
1
7
5
I
rr
T
ch
= 25°C
T
ch
= 150°C
2 3
5 7 10
1
2 3
3
2
0.8
0.6
0.4
–50
0
50
100
150
10
0
5 7 10
2
CHANNEL TEMPERATURE Tch (°C)
TRANSIENT THERMAL IMPEDANCE Z
th (ch–c)
(°C/ W)
DIODE REVERSE VS.
SOURCE CURRENT d
is
/d
t
CHARACTERISTIC
(TYPICAL)
5
5
I
S
= 10A
V
GS
= 0V
3
3
V
DD
= 250V 2
2
t
rr
10
2
7
5
3
2
I
rr
10
1
7
5
10
1
0
T
ch
= 25°C 10
T
ch
= 150°C 7
5
2 3
5 7 10
3
SOURCE CURRENT I
S
(A)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
10
1
7
5 D=1
3
2 0.5
10
0
7
5
3
2
0.2
0.1
P
DM
0.05
0.02
0.01
Single Pulse
tw
T
D= tw
T
10
1
7
5
3
2
REVERSE RECOVERY CURRENT I
rr
(A)
REVERSE RECOVERY TIME t
rr
(ns)
10
–1
7
5
3
2
2 3
5 7 10
2
10
–2
10
–4
2 3 5710
–3
2 3 5710
–2
2 3 5710
–1
2 3 5710
0
2 3 5710
1
2 3 5710
2
PULSE WIDTH t
w
(s)
SOURCE CURRENT d
is
/d
t
(–A/µs)
REVERSE RECOVERY CURRENT I
rr
(A)
Feb.1999
DIODE REVERSE VS.
SOURCE CURRENT CHARACTERISTIC
(TYPICAL)
3
10
2
10
d
is/
d
t
= –100A/µs
7
7
V
GS
= 0V
5
5
V
DD
= 250V
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