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ON Semiconductort
Amplifier Transistors
PNP Silicon
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current – Continuous
Total Device Dissipation @ T
A
= 25°C
Derate above 25°C
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
D
P
D
T
J
, T
stg
BC327
–45
–50
–5.0
–800
625
5.0
1.5
12
–55 to +150
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
Watt
mW/°C
°C
BC327,
BC327-16,
BC327-25,
BC327-40
1
2
3
CASE 29–11, STYLE 17
TO–92 (TO–226AA)
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Symbol
R
qJA
R
qJC
Max
200
83.3
Unit
°C/W
°C/W
2
BASE
3
EMITTER
COLLECTOR
1
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I
C
= –10 mA, I
B
= 0)
Collector–Emitter Breakdown Voltage
(I
C
= –100
µA,
I
E
= 0)
Emitter–Base Breakdown Voltage
(I
E
= –10
mA,
I
C
= 0)
Collector Cutoff Current
(V
CB
= –30 V, I
E
= 0)
Collector Cutoff Current
(V
CE
= –45 V, V
BE
= 0)
Emitter Cutoff Current
(V
EB
= –4.0 V, I
C
= 0)
V
(BR)CEO
–45
V
(BR)CES
–50
V
(BR)EBO
I
CBO
–
I
CES
–
I
EBO
–
–
–
–100
–100
nAdc
–
–100
nAdc
–5.0
–
–
–
–
Vdc
nAdc
–
–
Vdc
Vdc
©
Semiconductor Components Industries, LLC, 2001
202
May, 2001 – Rev. 2
Publication Order Number:
BC327/D
BC327, BC327–16, BC327–25, BC327–40
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
DC Current Gain
(I
C
= –100 mA, V
CE
= –1.0 V)
h
FE
BC327
BC327–16
BC327–25
BC327–40
V
BE(on)
V
CE(sat)
100
100
160
250
40
–
–
–
–
–
–
–
–
–
630
250
400
630
–
–1.2
–0.7
Vdc
Vdc
–
(I
C
= –300 mA, V
CE
= –1.0 V)
Base–Emitter On Voltage
(I
C
= –300 mA, V
CE
= –1.0 V)
Collector–Emitter Saturation Voltage
(I
C
= –500 mA, I
B
= –50 mA)
SMALL–SIGNAL CHARACTERISTICS
Output Capacitance
(V
CB
= –10 V, I
E
= 0, f = 1.0 MHz)
Current–Gain – Bandwidth Product
(I
C
= –10 mA, V
CE
= –5.0 V, f = 100 MHz)
C
ob
f
T
–
–
11
260
–
–
pF
MHz
r(t), NORMALIZED EFFECTIVE TRANSIENT
THERMAL RESISTANCE
1.0
0.7
0.5
0.3
0.2
D = 0.5
0.2
0.1
P
(pk)
SINGLE PULSE
0.01
SINGLE PULSE
t
1
t
2
DUTY CYCLE, D = t
1
/t
2
0.002
0.005
0.01
0.02
0.05
0.1
0.2
0.5
t, TIME (SECONDS)
1.0
2.0
5.0
θ
JC
(t) = (t)
θ
JC
θ
JC
= 100°C/W MAX
θ
JA
(t) = r(t)
θ
JA
θ
JA
= 375°C/W MAX
D CURVES APPLY FOR
POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
T
J(pk)
– T
C
= P
(pk)
θ
JC
(t)
0.1 0.05
0.07 0.02
0.05
0.03
0.02
0.01
0.001
10
20
50
100
Figure 1. Thermal Response
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203
BC327, BC327–16, BC327–25, BC327–40
-1000
IC, COLLECTOR CURRENT (mA)
1.0 s
1.0 ms
T
J
= 135°C
hFE, DC CURRENT GAIN
100
µs
dc
T
C
= 25°C
dc
T
A
= 25°C
1000
V
CE
= -1.0 V
T
A
= 25°C
-100
100
-10
-1.0
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
(APPLIES BELOW RATED V
CEO
)
-3.0
-10
-30
V
CE
, COLLECTOR-EMITTER VOLTAGE
-100
10
-0.1
-1.0
-10
-100
I
C
, COLLECTOR CURRENT (mA)
-1000
Figure 2. Active Region – Safe Operating Area
Figure 3. DC Current Gain
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
-1.0
T
J
= 25°C
-0.8
-0.6
-0.4
I
C
= -300 mA
-0.2
I
C
= -10 mA
0
-0.01
-0.1
I
C
= -100 mA
I
C
=
-500 mA
V, VOLTAGE (VOLTS)
-1.0
T
A
= 25°C
-0.8
-0.6
-0.4
-0.2
V
CE(sat)
@ I
C
/I
B
= 10
-100
0
-1.0
-10
-100
I
C
, COLLECTOR CURRENT (mA)
-1000
V
BE(sat)
@ I
C
/I
B
= 10
V
BE(on)
@ V
CE
= -1.0 V
-1.0
-10
I
B
, BASE CURRENT (mA)
Figure 4. Saturation Region
Figure 5. “On” Voltages
θ
V, TEMPERATURE COEFFICIENTS (mV/
°
C)
+1.0
θ
VC
for V
CE(sat)
100
0
C, CAPACITANCE (pF)
C
ib
10
C
ob
-1.0
θ
VB
for V
BE
-2.0
-1.0
-10
-100
I
C
, COLLECTOR CURRENT
-1000
1.0
-0.1
-1.0
-10
V
R
, REVERSE VOLTAGE (VOLTS)
-100
Figure 6. Temperature Coefficients
Figure 7. Capacitances
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204
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