BZD27C6V8P - BZD27C220P
Taiwan Semiconductor
1W, 6.8V - 220V Voltage Regulator Diode
FEATURES
●
●
●
●
●
●
Silicon zener diodes
Low profile surface-mount package
Zener and surge current specification
Low leakage current
Excellent stability
Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
● Halogen-free according to IEC 61249-2-21
KEY PARAMETERS
PARAMETER
V
Z
P
tot
T
J MAX
Package
Configuration
VALUE
6.8 - 220
1.0
175
Sub SMA
Single die
UNIT
V
W
°C
APPLICATIONS
●
●
●
●
Switching mode power supply (SMPS)
Adapters
Lighting application
On-board DC/DC converter
MECHANICAL DATA
●
●
●
●
●
●
●
●
●
Case: Sub SMA
Molding compound meets UL 94 V-0 flammability rating
Part no. with suffix "H" means AEC-Q101 qualified
Packing code with suffix "G" means green compound
(halogen-free)
Moisture sensitivity level: level 1, per J-STD-020
Terminal: Matte tin plated leads, solderable per J-STD-002
Meet JESD 201 class 2 whisker test
Polarity: As marked
Weight: 19mg (approximately)
Sub SMA
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted)
PARAMETER
Forward voltage @ I
F
=0.2A
Power dissipation at T
L
=73°C
T
A
=25°C (Note 1)
Non-repetitive peak pulse power dissipation
100μs square pulse (Note 2)
Non-repetitive peak pulse power dissipation
10/1000μs waveform (BZD27C6V8P to BZD27C100P)
Non-repetitive peak pulse power dissipation
10/1000μs waveform (BZD27C110P to BZD27C220P)
Operating and storage temperature range
Notes:
1. Mounted on Cu-Pad size 5mm x 5mm
2. T
J
=25°C prior to surge
SYMBOL
V
F
P
tot
P
ZSM
P
RSM
P
RSM
T
J
,T
STG
VALUE
1.2
2.3
1.0
300
150
100
-55 to +175
UNIT
Volts
Watts
Watts
Watts
Watts
°C
1
Version:Z1706
BZD27C6V8P - BZD27C220P
Taiwan Semiconductor
THERMAL PERFORMANCE
PARAMETER
Junction-to-lead thermal resistance
Junction-to-ambient thermal resistance
Junction-to-case thermal resistance
SYMBOL
R
ӨJL
R
ӨJA
R
ӨJC
LIMIT
44
88
48
UNIT
°C/W
°C/W
°C/W
Thermal Performance Note:
Units mounted on recommended PCB (5mm x 5mm Cu pad test board)
ORDERING INFORMATION
PART NO.
PARTNO.
SUFFIX
PACKING
CODE
RU
RV
RT
MT
RQ
BZD27CxxP
(Note 1)
MQ
H
R3
RF
R2
M2
RH
MH
G
Sub SMA
Sub SMA
Sub SMA
Sub SMA
Sub SMA
Sub SMA
PACKING CODE
SUFFIX
PACKAGE
Sub SMA
Sub SMA
Sub SMA
Sub SMA
Sub SMA
Sub SMA
PACKING
1,800 / 7" Plastic reel
(8mm tape)
3,000 / 7" Plastic reel
(8mm tape)
7,500 / 13" Paper reel
(8mm tape)
7,500 / 13" Plastic reel
(8mm tape)
10,000 / 13" Paper reel
(8mm tape)
10,000 / 13" Plastic reel
(8mm tape)
1,800 / 7" Plastic reel
(12mm tape)
3,000 / 7" Plastic reel
(12mm tape)
7,500 / 13" Paper reel
(12mm tape)
7,500 / 13" Plastic reel
(12mm tape)
10,000 / 13" Paper reel
(12mm tape)
10,000 / 13" Plastic reel
(12mm tape)
Note :
1. "xx" defines voltage from 6.8V (BZD27C6V8P) to 220V (BZD27C220P)
EXAMPLE
EXAMPLE P/N
BZD27C10PHRUG
PART NO.
BZD27C10P
PART NO.
SUFFIX
H
PACKING
CODE
RU
PACKING CODE
SUFFIX
G
DESCRIPTION
AEC-Q101 qualified
Green compound
2
Version:Z1706
BZD27C6V8P - BZD27C220P
Taiwan Semiconductor
CHARACTERISTICS CURVES
(T
A
= 25°C unless otherwise noted)
Fig.1 TYPICAL FORWARD CHARACTERISTICS
10
INSTANTANEOUS FORWARD CURRENT
(A)
TYP. JUNCTION CAPACITANCE (pF)
Fig.2 TYP. DIODE CAPACITANCE vs REVERSE
VOLTAGE
10000
1000
C6V8P
C12P
TYP. VF
1
MAX. VF
100
C27P
C200P
0.1
0.6
0.7
0.8
0.9
1
1.1
1.2
1.3
1.4
1.5
1.6
10
0.0
0.5
1.0
1.5
2.0
2.5
3.0
FORWARD VOLTAGE (V)
REVERSE VOLTAGE
Fig.3 POWER DISSIPATION v.s TEMPERATURE
3
2.5
POWER DISSIPATION(W)
2
1.5
RthjA=88°C/W
1
0.5
0
25
50
75
100
125
150
175
Heat sink
5mm x 5mm
Cu pad test board
RthjL=44°C/W
TEMPERATURE (
°
C)
4
Version:Z1706
NXP MCU
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