电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

IR180LG12S05

产品描述Rectifier Diode, 1 Phase, 1 Element, 1200V V(RRM), Silicon, 4 INCH, WAFER
产品类别分立半导体    二极管   
文件大小92KB,共4页
制造商Vishay(威世)
官网地址http://www.vishay.com
下载文档 详细参数 选型对比 全文预览

IR180LG12S05概述

Rectifier Diode, 1 Phase, 1 Element, 1200V V(RRM), Silicon, 4 INCH, WAFER

IR180LG12S05规格参数

参数名称属性值
厂商名称Vishay(威世)
零件包装代码WAFER
包装说明4 INCH, WAFER
针数1
Reach Compliance Codeunknown
ECCN代码EAR99
应用FAST RECOVERY
配置SINGLE
二极管元件材料SILICON
二极管类型RECTIFIER DIODE
JESD-30 代码R-XUUC-N1
元件数量1
相数1
端子数量1
封装主体材料UNSPECIFIED
封装形状RECTANGULAR
封装形式UNCASED CHIP
认证状态Not Qualified
最大重复峰值反向电压1200 V
表面贴装YES
端子形式NO LEAD
端子位置UPPER
Base Number Matches1

文档预览

下载PDF文档
Bulletin I0550J 02/07
IR180LG..HS05CB SERIES
FAST RECOVERY DIODES
Junction Size:
Wafer Size:
V
RRM
Class:
Passivation Process:
Reference IR Packaged Part:
Square 180 mils
4"
1000 and 1200V
Glassivated MESA
16FL Series
Major Ratings and Characteristics
Parameters
V
FM
V
RRM
Maximum Forward Voltage
Reverse Breakdown Voltage Range
Units
1400 mV
1000 - 1200V
Test Conditions
T
J
= Amb., I
F
= 16 A
T
J
= Amb., I
RRM
= 100
μA
(*)
(*)
Nitrogen flow on die edge.
Mechanical Characteristics
Nominal Back Metal Composition, Thickness
Nominal Front Metal Composition, Thickness
Chip Dimensions
Wafer Diameter
Wafer Thickness
Maximum Width of Sawing Line
Reject Ink Dot Size
Ink Dot Location
Recommended Storage Environment
Cr - Ni - Ag (1 KA - 4 KA - 6 KA)
Cr-Ni-Ag (1KA-4KA-6KA)
180 x 180 mils (4.57x4.57) - see drawing
100 mm, with std. < 110 > flat
260
μm
45
μm
0.25 mm diameter minimum
See drawing
Storage in original container, in dessicated
nitrogen, with no contamination
Document Number: 93881
www.vishay.com
1

IR180LG12S05相似产品对比

IR180LG12S05 IR180LG12S05CB IR180LG10HS05CB IR180LG10HS05 IR180LG12HS05 IR180LG12HS05CB
描述 Rectifier Diode, 1 Phase, 1 Element, 1200V V(RRM), Silicon, 4 INCH, WAFER Rectifier Diode, 1 Phase, 1 Element, 1200V V(RRM), Silicon, 4 INCH, WAFER Rectifier Diode, 1 Phase, 1 Element, 1000V V(RRM), Silicon, 4 INCH, WAFER Rectifier Diode, 1 Phase, 1 Element, 1000V V(RRM), Silicon, 4 INCH, WAFER Rectifier Diode, 1 Phase, 1 Element, 1200V V(RRM), Silicon, 4 INCH, WAFER Rectifier Diode, 1 Phase, 1 Element, 1200V V(RRM), Silicon, 4 INCH, WAFER
厂商名称 Vishay(威世) Vishay(威世) Vishay(威世) Vishay(威世) Vishay(威世) Vishay(威世)
零件包装代码 WAFER WAFER WAFER WAFER WAFER WAFER
包装说明 4 INCH, WAFER 4 INCH, WAFER 4 INCH, WAFER R-XUUC-N1 R-XUUC-N1 4 INCH, WAFER
针数 1 1 1 1 1 1
Reach Compliance Code unknown unknown compliant unknown unknown compliant
ECCN代码 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
应用 FAST RECOVERY FAST RECOVERY FAST RECOVERY FAST RECOVERY FAST RECOVERY FAST RECOVERY
配置 SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
二极管元件材料 SILICON SILICON SILICON SILICON SILICON SILICON
二极管类型 RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
JESD-30 代码 R-XUUC-N1 R-XUUC-N1 R-XUUC-N1 R-XUUC-N1 R-XUUC-N1 R-XUUC-N1
元件数量 1 1 1 1 1 1
相数 1 1 1 1 1 1
端子数量 1 1 1 1 1 1
封装主体材料 UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 UNCASED CHIP UNCASED CHIP UNCASED CHIP UNCASED CHIP UNCASED CHIP UNCASED CHIP
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
最大重复峰值反向电压 1200 V 1200 V 1000 V 1000 V 1200 V 1200 V
表面贴装 YES YES YES YES YES YES
端子形式 NO LEAD NO LEAD NO LEAD NO LEAD NO LEAD NO LEAD
端子位置 UPPER UPPER UPPER UPPER UPPER UPPER

技术资料推荐更多

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 2402  2829  902  74  1962  9  36  45  49  11 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved