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SMBD850D-3100S-I

产品描述1 ELEMENT, INFRARED LED, 850nm, ROHS COMPLIANT PACKAGE-2
产品类别光电子/LED    光电   
文件大小194KB,共6页
制造商Epitex Inc
官网地址http://www.epitex.com
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SMBD850D-3100S-I概述

1 ELEMENT, INFRARED LED, 850nm, ROHS COMPLIANT PACKAGE-2

SMBD850D-3100S-I规格参数

参数名称属性值
厂商名称Epitex Inc
包装说明ROHS COMPLIANT PACKAGE-2
Reach Compliance Codeunknown
配置SERIES CONNECTED, 3 ELEMENTS
最大正向电流1 A
功能数量1
最高工作温度100 °C
最低工作温度-40 °C
光电设备类型INFRARED LED
标称输出功率1800 mW
峰值波长850 nm
形状RECTANGULAR
Base Number Matches1

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epitex
Opto-Device & Custom LED
High Power Top LED SMBD850D-3100S-I
Lead ( Pb ) Free Product – RoHS Compliant
SMBD850D-3100S-I

High Power Top LED
SMBD850D-3100S-I is an AlGaAs LED mounted on copper heat sink with a 5*5 mm
package.
These devices are available to be operated and 1700mW/sr at IFP=3A.
Specifications
1) Product Name
2) Type No.
3) Chip
(1) Chip Material
(2) Chip Dimension
(3) Chip Number
(4) Peak Wavelength
4) Package
(1) Lead Frame Die
(2) Insulator
(3)
Package Resin
(4)
Lens
Outer
dimension (Unit: mm)
High Power Top LED
SMBD850D-3100S-I
AlGaAs
1000um*1000um
3pce
850nm typ.
Silver Plated on Copper
AlN ceramics
PA9T Resin
Silicone Resin
Absolute
Maximum Ratings [Ta=25°C]
Item
Symbol
Power Dissipation
P
D
Forward Current
I
F
Pulse Forward Current
I
FP
Reverse Voltage
V
R
Thermal Resistance
R
thja
Junction Temperature
T
j
Operating Temperature
T
OPR
Storage Temperature
T
STG
Soldering Temperature
T
SOL
Maximum Rated Value
7500
1000
3000
15
10
120
-40 ~ +100
-40 ~ +100
250
Unit
mW
mA
mA
V
K/W
°C
°C
°C
°C
‡Pulse Forward Current condition: Duty=1% and Pulse Width=10us.
‡Soldering condition: Soldering condition must be completed within 5 seconds at 250°C
Electro-Optical
Characteristics [Ta=25°C typ.]
Item
Symbol Condition
I
F
=350mA
V
F
Forward Voltage
I
F
=1A
V
FP
I
FP
=3A
I
F
=1A
Radiated Power
P
O
I
FP
=3A
I
F
=1A
Radiant Intensity
I
E
I
FP
=3A
Peak Wavelength
P
I
F
=1A
Half Width

I
F
=1A
Viewing Half Angle


I
F
=100mA
Rise Time
tr
I
F
=1A
Fall Time
tf
I
F
=1A
Minimum
1300
Typical
4.8
5.4
8.1
1800
5200
600
1700
850
30
±60
280
280
Maximum
5.7
Unit
V
V
mW
mW
mW/sr
mW/sr
nm
nm
deg.
ns
ns
‡Radiated Power is measured by S3584-08.
‡Radiant Intensity is measured by CIE127-2007 Condition B.
EPITEX INC.: 66-3 Minami-Kawabe Cho, Higashi-Kujyo, Minami-Ku, Kyoto, Japan
Tel: ++81-75-682-2338
Fax: ++81-75-682-2267
e-mail : sales-dep@epitex.com
http://www.epitex.com/

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