Datasheet> 器件分类 > 分立半导体> 晶体管> IRFE130SCS

IRFE130SCS: 产品描述Power Field-Effect Transistor, 8A I(D), 100V, 0.207ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, LCC-18; 产品类别分立半导体晶体管; 文件大小199KB，共7页; 制造商International Rectifier （ Infineon ）; 官网地址http://www.irf.com/

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IRFE130SCS概述

Power Field-Effect Transistor, 8A I(D), 100V, 0.207ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, LCC-18

IRFE130SCS规格参数

参数名称	属性值
是否无铅	含铅
是否Rohs认证	不符合
厂商名称	International Rectifier （ Infineon ）
零件包装代码	LCC
包装说明	CHIP CARRIER, R-CQCC-N15
针数	18
Reach Compliance Code	compliant
ECCN代码	EAR99
其他特性	AVALANCHE RATED
雪崩能效等级（Eas）	134 mJ
外壳连接	SOURCE
配置	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压	100 V
最大漏极电流 (ID)	8 A
最大漏源导通电阻	0.207 Ω
FET 技术	METAL-OXIDE SEMICONDUCTOR
JESD-30 代码	R-CQCC-N15
JESD-609代码	e0
元件数量	1
端子数量	15
工作模式	ENHANCEMENT MODE
最高工作温度	150 °C
封装主体材料	CERAMIC, METAL-SEALED COFIRED
封装形状	RECTANGULAR
封装形式	CHIP CARRIER
峰值回流温度（摄氏度）	NOT SPECIFIED
极性/信道类型	N-CHANNEL
最大脉冲漏极电流 (IDM)	32 A
认证状态	Not Qualified
表面贴装	YES
端子面层	TIN LEAD
端子形式	NO LEAD
端子位置	QUAD
处于峰值回流温度下的最长时间	NOT SPECIFIED
晶体管应用	SWITCHING
晶体管元件材料	SILICON
Base Number Matches	1

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PD - 91666B

IRFE130

REPETITIVE A ALANCHE AND dv/dt RATED

JANTX2N6796U



HEXFET TRANSISTORS

JANTXV2N6796U

SURFACE MOUNT (LCC-18)

[REF:MIL-PRF-19500/557]

100V, N-CHANNEL

Product Summary

Part Number

IRFE130

VDSS

100V

DS(on)

0.18Ω

8.0A

The leadless chip carrier (LCC) package represents the

logical next step in the continual evolution of surface

mount technology. Desinged to be a close replacement

for the TO-39 package, the LCC will give designers the

extra flexibility they need to increase circuit board den-

sity. International Rectifier has engineered the LCC pack-

age to meet the specific needs of the power market by

increasing the size of the bottom source pad, thereby

enhancing the thermal and electrical performance. The

lid of the package is grounded to the source to reduce

RF interference.

LCC-18

Features:

Surface Mount

Small Footprint

Alternative to TO-39 Package

Hermetically Sealed

Dynamic dv/dt Rating

Avalanche Energy Rating

Simple Drive Requirements

Light Weight

Absolute Maximum Ratings

Parameter

ID @ VGS = 10V, TC = 25°C

ID @ VGS = 10V, TC = 100°C

I DM

PD @ TC = 25°C

VGS

EAS

IAR

EAR

dv/dt

T STG

Continuous Drain Current

Pulsed Drain Current

➀

Max. Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy

➁

Avalanche Current

➀

Repetitive Avalanche Energy

➀

Peak Diode Recovery dv/dt

➂

Operating Junction

Storage Temperature Range

Pckg. Mounting Surface Temp.

Weight

For footnotes refer to the last page

8.0

5.0

0.17

±20

134

8.3

-55 to 150

300 (for 5 S)

0.42(typical)

W/°C

Units

V/ns

www.irf.com

1/17/01

IRFE130SCS相似产品对比

	IRFE130SCS	IRFE130SCX	IRFE130SCV	IRFE130SCSPBF	IRFE130SCVPBF	IRFE130PBF	IRFE130SCXPBF
描述	Power Field-Effect Transistor, 8A I(D), 100V, 0.207ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, LCC-18	Power Field-Effect Transistor, 8A I(D), 100V, 0.207ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, LCC-18	Power Field-Effect Transistor, 8A I(D), 100V, 0.207ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, LCC-18	Power Field-Effect Transistor, 8A I(D), 100V, 0.207ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, LCC-18	Power Field-Effect Transistor, 8A I(D), 100V, 0.207ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, LCC-18	Power Field-Effect Transistor, 8A I(D), 100V, 0.207ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, LCC-18	Power Field-Effect Transistor, 8A I(D), 100V, 0.207ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, LCC-18
是否Rohs认证	不符合	不符合	不符合	符合	符合	符合	符合
厂商名称	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）
零件包装代码	LCC	LCC	LCC	LCC	LCC	LCC	LCC
包装说明	CHIP CARRIER, R-CQCC-N15	CHIP CARRIER, R-CQCC-N15	CHIP CARRIER, R-CQCC-N15	CHIP CARRIER, R-CQCC-N15	CHIP CARRIER, R-CQCC-N15	CHIP CARRIER, R-CQCC-N15	CHIP CARRIER, R-CQCC-N15
针数	18	18	18	18	18	18	18
Reach Compliance Code	compliant	compliant	compliant	compliant	compliant	compliant	compliant
ECCN代码	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
其他特性	AVALANCHE RATED	AVALANCHE RATED	AVALANCHE RATED	AVALANCHE RATED	AVALANCHE RATED	HIGH RELIABILITY	AVALANCHE RATED
雪崩能效等级（Eas）	134 mJ	134 mJ	134 mJ	134 mJ	134 mJ	134 mJ	134 mJ
外壳连接	SOURCE	SOURCE	SOURCE	SOURCE	SOURCE	SOURCE	SOURCE
配置	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压	100 V	100 V	100 V	100 V	100 V	100 V	100 V
最大漏极电流 (ID)	8 A	8 A	8 A	8 A	8 A	8 A	8 A
最大漏源导通电阻	0.207 Ω	0.207 Ω	0.207 Ω	0.207 Ω	0.207 Ω	0.207 Ω	0.207 Ω
FET 技术	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-30 代码	R-CQCC-N15	R-CQCC-N15	R-CQCC-N15	R-CQCC-N15	R-CQCC-N15	R-CQCC-N15	R-CQCC-N15
元件数量	1	1	1	1	1	1	1
端子数量	15	15	15	15	15	15	15
工作模式	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
封装主体材料	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	CHIP CARRIER	CHIP CARRIER	CHIP CARRIER	CHIP CARRIER	CHIP CARRIER	CHIP CARRIER	CHIP CARRIER
峰值回流温度（摄氏度）	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	260	260	260	260
极性/信道类型	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
最大脉冲漏极电流 (IDM)	32 A	32 A	32 A	32 A	32 A	32 A	32 A
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
表面贴装	YES	YES	YES	YES	YES	YES	YES
端子形式	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD
端子位置	QUAD	QUAD	QUAD	QUAD	QUAD	QUAD	QUAD
处于峰值回流温度下的最长时间	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	40	40	40	40
晶体管应用	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
晶体管元件材料	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Base Number Matches	1	1	1	1	1	1	1
是否无铅	含铅	-	-	不含铅	不含铅	不含铅	不含铅
最高工作温度	150 °C	-	-	150 °C	150 °C	150 °C	150 °C

IRFE130SCS

IRFE130SCS概述

IRFE130SCS规格参数

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