VS-GA200HS60S1PbF
www.vishay.com
Vishay Semiconductors
INT-A-PAK Half-Bridge IGBT
(Standard Speed IGBT), 200 A
FEATURES
• Generation 4 IGBT technology
• Standard: Optimized for hard switching speed
DC to 1 kHz
• Very low conduction losses
• Industry standard package
• UL approved file E78996
• Designed and qualified for industrial level
INT-A-PAK
• Material categorization: For definitions of compliance
please see
www.vishay.com/doc?99912
BENEFITS
PRODUCT SUMMARY
V
CES
I
C
DC
V
CE(on)
at 200 A, 25 °C
Package
Circuit
600 V
480 A
1.13 V
INT-A-PAK
Half-Bridge
• Increased operating efficiency
• Direct mounting to heatsink
• Performance optimized as output inverter stage for TIG
welding machines
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Collector to emitter voltage
Continuous collector current
Pulsed collector current
Peak switching current
Gate to emitter voltage
RMS isolation voltage
Maximum power dissipation
Operating junction temperature range
Storage temperature range
SYMBOL
V
CES
I
C
I
CM
I
LM
V
GE
V
ISOL
P
D
T
J
T
Stg
Any terminal to case, t = 1 minute
T
C
= 25 °C
T
C
= 85 °C
T
C
= 25 °C
T
C
= 116 °C
TEST CONDITIONS
MAX.
600
480
200
800
800
± 20
2500
830
430
-40 to +150
-40 to +125
V
A
UNITS
V
W
°C
ELECTRICAL SPECIFICATIONS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Collector to emitter breakdown voltage
Collector to emitter voltage
Gate threshold voltage
Collector to emitter leakage current
Gate to emitter leakage current
SYMBOL
V
BR(CES)
V
CE(on)
V
GE(th)
I
CES
I
GES
TEST CONDITIONS
V
GE
= 0 V, I
C
= 1 mA
V
GE
= 15 V, I
C
= 200 A
V
GE
= 15 V, I
C
= 200 A, T
J
= 125 °C
I
C
= 0.25 mA
V
GE
= 0 V, V
CE
= 600 V
V
GE
= 0 V, V
CE
= 600 V, T
J
= 125 °C
V
GE
= ± 20 V
MIN.
600
-
-
3
-
-
-
TYP.
-
1.13
1.08
4.5
0.025
-
-
MAX.
-
1.21
1.18
6
1
10
± 250
mA
nA
V
UNITS
Revision: 09-Apr-14
Document Number: 94362
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-GA200HS60S1PbF
www.vishay.com
Vishay Semiconductors
SWITCHING CHARACTERISTICS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Total gate charge
Gate to emitter charge
Gate to collector charge
Turn-on switching loss
Turn-off switching loss
Total switching loss
Turn-on switching loss
Turn-off switching loss
Total switching loss
Input capacitance
Output capacitance
Reverse transfer capacitance
SYMBOL
Q
g
Q
ge
Q
gc
E
on
E
off
E
ts
E
on
E
off
E
ts
C
ies
C
oes
C
res
TEST CONDITIONS
I
C
= 200 A
V
CC
= 400 V
V
GE
= 15 V
I
C
= 200 A, V
CC
= 480 V, V
GE
= 15 V
R
g
= 10
Freewheeling diode: 30EPH06, T
J
= 25 °C
I
C
= 200 A, V
CC
= 480 V, V
GE
= 15 V
R
g
= 10
Freewheeling diode: 30EPH06, T
J
= 125 °C
V
GE
= 0 V
V
CC
= 30 V
f = 1.0 MHz
MIN.
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
1600
260
580
30
50
80
34
104
138
32 500
2080
380
MAX.
1700
340
670
-
-
-
-
-
151
-
-
-
pF
mJ
mJ
nC
UNITS
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Operating junction temperature range
Storage temperature range
Junction to case per leg
Case to sink
Mounting torque
Weight
case to heatsink
case to terminal 1, 2, 3
SYMBOL
T
J
T
Stg
R
thJC
R
thCS
MIN.
- 40
- 40
-
-
-
-
-
TYP.
-
-
-
0.1
-
-
185
MAX.
150
125
0.15
-
4
3
-
UNITS
°C
°C/W
Nm
g
I
C
- Collector to Emitter Current (A)
V
GE
= 15 V
500 µs pulse width
I
C
- Collector to Emitter Current (A)
1000
1000
100
T
J
= 125 °C
100
T
J
= 125 °C
10
T
J
= 25 °C
T
J
= 25 °C
10
0.6
0.8
1.0
1.2
1.4
1.6
1
4.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
V
CE
- Collector to Emitter Voltage (V)
Fig. 1 - Typical Output Characteristics
V
GE
- Gate to Emitter Voltage (V)
Fig. 2 - Typical Transfer Characteristics
Revision: 09-Apr-14
Document Number: 94362
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-GA200HS60S1PbF
www.vishay.com
Vishay Semiconductors
16
160
V
GE
- Gate to Emitter Voltage (V)
T
C
- Case Temperature (°C)
140
120
100
80
60
40
20
0
0
100
200
300
400
500
14
12
10
8
6
4
2
0
0
300
600
900
1200
1500
1800
Typical value
Maximum DC Collector Current (A)
Fig. 3 - Case Temperature vs. Maximum Collector Current
Q
G
- Total Gate Charge (nC)
Fig. 5 - Typical Gate Charge vs. Gate to Emitter Voltage
V
CE
- Collector to Emitter Voltage (V)
1.6
400 A
1.4
50
45
40
35
30
25
20
20
40
60
80
100
120
140
160
0
10
20
30
40
50
T
J
= 25 °C
V
CE
= 480 V
V
GE
= 15 V
I
C
= 200 A
E
on
typical
E
off
typical
1.2
200 A
1.0
120 A
Switching Losses (mJ)
Freewheeling
diode 30EPH06
0.8
T
J
- Junction Temperature (°C)
Fig. 4 - Typical Collector to Emitter Voltage vs.
Junction Temperature
R
G
- Gate Resistance (Ω)
Fig. 6 - Typical Switching Losses vs. Gate Resistance
80
70
T
J
= 125 °C
V
CE
= 480 V
V
GE
= 15 V
V
GE
= 10
Ω
Freewheeling
diode 30EPH06
E
off
typical
Switching Losses (mJ)
60
50
40
30
20
10
0
50
E
on
typical
75
100
125
150
175
200
I
C
- Collector to Emitter Current (A)
Fig. 7 - Typical Switching Losses vs.
Collector to Emitter Current
Revision: 09-Apr-14
Document Number: 94362
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-GA200HS60S1PbF
www.vishay.com
ORDERING INFORMATION TABLE
Vishay Semiconductors
Device code
VS-
1
1
2
3
4
5
6
7
8
9
-
-
-
-
-
-
-
-
-
GA
2
200
3
H
4
S
5
60
6
S
7
1
8
PbF
9
Vishay Semiconductors product
Essential part number IGBT modules
Current rating (200 = 200 A)
Circuit configuration (H = Half bridge without f/w diode)
INT-A-PAK
Voltage code (60 = 600 V)
Speed/type (S = Standard speed IGBT)
Assy location Italy
None = Standard production; PbF = Lead (Pb)-free
CIRCUIT CONFIGURATION
3
3
6, 7
1
6
7
1
4, 5
4
5
2
2
Functional Diagram
Electrical Diagram
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95173
Revision: 09-Apr-14
Document Number: 94362
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Outline Dimensions
Vishay Semiconductors
INT-A-PAK IGBT/Thyristor
DIMENSIONS
in millimeters (inches)
30 (1.18)
9 (0.33)
7 (0.28)
Ø 6.5 (0.25 DIA)
80 (3.15)
17 (0.67)
23 (0.91)
23 (0.91)
7
6
5 (0.20)
14.5 (0.57)
35 (1.38)
1
2
3
5
4
3 screws M6 x 10
66 (2.60)
94 (3.70)
2.8 x 0.8
(0.11 x 0.03)
28 (1.10)
29 (1.15)
37 (1.44)
Document Number: 95067
Revision: 15-Feb-08
For technical questions, contact:
indmodules@vishay.com
www.vishay.com
1
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