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5962R9676601VXC: 产品描述256X8 MULTI-PORT SRAM, CDIP40, CERAMIC, DIP-40; 产品类别存储存储; 文件大小109KB，共11页; 制造商Renesas(瑞萨电子); 官网地址https://www.renesas.com/

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5962R9676601VXC概述

256X8 MULTI-PORT SRAM, CDIP40, CERAMIC, DIP-40

5962R9676601VXC规格参数

参数名称	属性值
零件包装代码	DIP
包装说明	DIP,
针数	40
Reach Compliance Code	unknown
ECCN代码	3A001.A.2.C
其他特性	TWO PROGRAMMABLE 8-BIT I/O PORTS
JESD-30 代码	R-CDIP-T40
JESD-609代码	e4
内存密度	2048 bit
内存集成电路类型	MULTI-PORT SRAM
内存宽度	8
功能数量	1
端子数量	40
字数	256 words
字数代码	256
工作模式	ASYNCHRONOUS
最高工作温度	125 °C
最低工作温度	-55 °C
组织	256X8
封装主体材料	CERAMIC, METAL-SEALED COFIRED
封装代码	DIP
封装形状	RECTANGULAR
封装形式	IN-LINE
并行/串行	PARALLEL
认证状态	Not Qualified
筛选级别	MIL-PRF-38535 Class V
座面最大高度	5.72 mm
标称供电电压 (Vsup)	5 V
表面贴装	NO
技术	CMOS
温度等级	MILITARY
端子面层	GOLD
端子形式	THROUGH-HOLE
端子节距	2.54 mm
端子位置	DUAL
总剂量	100k Rad(Si) V
宽度	15.24 mm
Base Number Matches	1

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HS-81C55RH, HS-81C56RH

Data Sheet

August 2000

File Number

3039.2

Radiation Hardened 256 x 8 CMOS RAM

The HS-81C55/56RH are radiation hardened RAM and I/O

chips fabricated using the Intersil radiation hardened Self-

Aligned Junction Isolated (SAJI) silicon gate technology.

Latch-up free operation is achieved by the use of epitaxial

starting material to eliminate the parasitic SCR effect seen in

conventional bulk CMOS devices.

The HS-81C55/56RH is intended for use with the

HS-80C85RH radiation hardened microprocessor system.

The RAM portion is designed as 2048 static cells organized

as 256 x 8. A maximum post irradiation access time of

500ns allows the HS-81C55/56RH to be used with the

HS-80C85RH CPU without any wait states. The

HS-81C55RH requires an active low chip enable while the

HS-81C56RH requires an active high chip enable. These

chips are designed for operation utilizing a single 5V power

supply.

Speciﬁcations for Rad Hard QML devices are controlled

by the Defense Supply Center in Columbus (DSCC). The

SMD numbers listed here must be used when ordering.

Detailed Electrical Speciﬁcations for these devices are

contained in SMD 5962-96766. A “hot-link” is provided

on our homepage for downloading.

http://www.intersil.com/spacedefense/space.asp

Features

• Electrically Screened to SMD # 5962-96766

• QML Qualiﬁed per MIL-PRF-38535 Requirements

• Radiation Hardened EPI-CMOS

- Total Dose. . . . . . . . . . . . . . . . . . . . . 100 krad(Si) (Max)

- Transient Upset . . . . . . . . . . . . . . . . . .>1 x 10

rad(Si)/s

- Latch-Up Free . . . . . . . . . . . . . . . . . . >1 x 10

rad(Si)/s

• Electrically Equivalent to Sandia SA 3001

• Pin Compatible with Intel 8155/56

• Bus Compatible with HS-80C85RH

• Single 5V Power Supply

• Low Standby Current . . . . . . . . . . . . . . . . . . . .200µA Max

• Low Operating Current . . . . . . . . . . . . . . . . . . . . 2mA/MHz

• Completely Static Design

• Internal Address Latches

• Two Programmable 8-Bit I/O Ports

• One Programmable 6-Bit I/O Port

• Programmable 14-Bit Binary Counter/Timer

• Multiplexed Address and Data Bus

• Self Aligned Junction Isolated (SAJI) Process

• Military Temperature Range . . . . . . . . . . . -55

C to 125

Ordering Information

ORDERING NUMBER

5962R9676601QXC

5962R9676601QYC

5962R9676601VXC

5962R9676601VYC

5962R9676602QXC

5962R9676602QYC

5962R9676602VXC

5962R9676602VYC

INTERNAL

MKT. NUMBER

HS1-81C55RH-8

HS9-81C55RH-8

HS1-81C55RH-Q

HS9-81C55RH-Q

HS1-81C56RH-8

HS9-81C56RH-8

HS1-81C56RH-Q

HS9-81C56RH-Q

TEMP. RANGE

(

-55 to 125

Functional Diagram

IO/M

AD0 - AD7

CE OR CE

†

ALE

RESET

TIMER CLK

TIMER OUT

TIMER

PORT C

PC0 - PC5

VDD (10V)

GND

256 x 8

STATIC

RAM

PORT A

PA0 - PA7

PORT B

PB0 - PB7

†

81C55RH = CE

81C56RH = CE

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.

1-888-INTERSIL or 321-724-7143

Intersil and Design is a trademark of Intersil Corporation.

5962R9676601VXC相似产品对比

	5962R9676601VXC	5962R9676601QYC	5962R9676602VXC	5962R9676602QYC	5962R9676601VYC	5962R9676602VYC
描述	256X8 MULTI-PORT SRAM, CDIP40, CERAMIC, DIP-40	256X8 MULTI-PORT SRAM, CDFP42, FP-42	256X8 MULTI-PORT SRAM, CDIP40, CERAMIC, DIP-40	256X8 MULTI-PORT SRAM, CDFP42, FP-42	256X8 MULTI-PORT SRAM, CDFP42, FP-42	256X8 MULTI-PORT SRAM, CDFP42, FP-42
零件包装代码	DIP	DFP	DIP	DFP	DFP	DFP
包装说明	DIP,	DFP,	DIP,	DFP,	DFP,	DFP,
针数	40	42	40	42	42	42
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown
ECCN代码	3A001.A.2.C	3A001.A.2.C	3A001.A.2.C	3A001.A.2.C	3A001.A.2.C	3A001.A.2.C
其他特性	TWO PROGRAMMABLE 8-BIT I/O PORTS	TWO PROGRAMMABLE 8-BIT I/O PORTS	TWO PROGRAMMABLE 8-BIT I/O PORTS	TWO PROGRAMMABLE 8-BIT I/O PORTS	TWO PROGRAMMABLE 8-BIT I/O PORTS	TWO PROGRAMMABLE 8-BIT I/O PORTS
JESD-30 代码	R-CDIP-T40	R-CDFP-F42	R-CDIP-T40	R-CDFP-F42	R-CDFP-F42	R-CDFP-F42
JESD-609代码	e4	e4	e4	e4	e4	e4
内存密度	2048 bit	2048 bit	2048 bit	2048 bit	2048 bit	2048 bit
内存集成电路类型	MULTI-PORT SRAM	MULTI-PORT SRAM	MULTI-PORT SRAM	MULTI-PORT SRAM	MULTI-PORT SRAM	MULTI-PORT SRAM
内存宽度	8	8	8	8	8	8
功能数量	1	1	1	1	1	1
端子数量	40	42	40	42	42	42
字数	256 words	256 words	256 words	256 words	256 words	256 words
字数代码	256	256	256	256	256	256
工作模式	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
最高工作温度	125 °C	125 °C	125 °C	125 °C	125 °C	125 °C
最低工作温度	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C
组织	256X8	256X8	256X8	256X8	256X8	256X8
封装主体材料	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED
封装代码	DIP	DFP	DIP	DFP	DFP	DFP
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	IN-LINE	FLATPACK	IN-LINE	FLATPACK	FLATPACK	FLATPACK
并行/串行	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
筛选级别	MIL-PRF-38535 Class V	MIL-PRF-38535 Class Q	MIL-PRF-38535 Class V	MIL-PRF-38535 Class Q	MIL-PRF-38535 Class V	MIL-PRF-38535 Class V
座面最大高度	5.72 mm	2.54 mm	5.72 mm	2.54 mm	2.54 mm	2.54 mm
标称供电电压 (Vsup)	5 V	5 V	5 V	5 V	5 V	5 V
表面贴装	NO	YES	NO	YES	YES	YES
技术	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
温度等级	MILITARY	MILITARY	MILITARY	MILITARY	MILITARY	MILITARY
端子面层	GOLD	GOLD	GOLD	GOLD	GOLD	GOLD
端子形式	THROUGH-HOLE	FLAT	THROUGH-HOLE	FLAT	FLAT	FLAT
端子节距	2.54 mm	1.27 mm	2.54 mm	1.27 mm	1.27 mm	1.27 mm
端子位置	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
总剂量	100k Rad(Si) V	100k Rad(Si) V	100k Rad(Si) V	100k Rad(Si) V	100k Rad(Si) V	100k Rad(Si) V
宽度	15.24 mm	16.255 mm	15.24 mm	16.255 mm	16.255 mm	16.255 mm
Base Number Matches	1	1	1	1	1	-
长度	-	26.925 mm	-	26.925 mm	26.925 mm	26.925 mm

5962R9676601VXC

5962R9676601VXC概述

5962R9676601VXC规格参数

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