Preliminary Information
Agilent AMMP-5024
100 kHz – 40 GHz
Traveling Wave Amplifier
Data Sheet
Features
•
5x5mm Surface Mount Package
•
Wide Frequency Range 100kHz - 40GHz
•
P-1dB of 23dBm
•
High Gain of 15 dB
•
50
Ω
match on Input and Output
•
Integrated Output Power Detector
8
4
1
2
3
Applications
•
Communication Systems
•
Microwave Instrumentation
•
Optical Systems
•
Broadband applications requiring flat gain
group delay
7
6
5
Pin
1
2
3
4
5
6
7
8
Function
V
g
V
d
DET
o
RF
Out
DET
R
V
d
V
g
RF
In
PACKAGE
BASE
GND
Description
Agilent’s AMMP-5024 is a broadband PHEMT GaAs MMIC
TWA designed for medium output power and high gain over
the full 100 KHz to 40 GHz frequency range. The design
employs a 9-stage, cascade-connected FET structure to ensure
flat gain and power as well as uniform group delay. E-beam
lithography is used to produce uniform gate lengths of 0.15um
and MBE technology assures precise semiconductor layer
control.
AMMP-5024 Absolute Maximum Ratings
[1]
Symbol Parameters/Conditions Units Min. Max.
V
d
1
Positive Drain Voltage
V
8
V
g
Gate Supply Voltage
V
-3
0.5
d
First Stage Drain
mA
1500
Current
P
in
CW Input Power
dBm
23
T
ch
Operating Channel
+150
°C
Temp.
T
stg
Storage Case Temp.
-65
+150
°C
T
max
Maximum Assembly
+300
°C
Temp (60 sec max)
Note:
1. Operation in excess of any one of these conditions may result in
permanent damage to this device.
This preliminary data is provided to assist you in the evaluation of product(s) currently under development. Until Agilent Technologies
releases this product for general sales, Agilent Technologies reserves the right to alter prices, specifications, features, capabilities,
functions, release dates, and remove availability of the product(s) at anytime.
Revision Date: 28 Sept 2005
Revision Number: 1
AMMP-5024 DC Specifications/Physical Properties
[1]
Symbol Parameters and Test Conditions
Drain Supply Current
I
d
[V
d
=7 V, V
g
= set for I
d
Typical]
θ
2(
ch−bs
)
Thermal Resistance
[2]
[Channel-to-Backside at Tch=150
°C]
Units
mA
°C/W
Min.
Typ.
200
14.5
Max.
Notes:
1. Ambient operational temperature T
A
=25°C unless otherwise noted.
2. Thermal resistance (°C/Watt) at a channel temperature T(°C) can be estimated using the equation:
θ
(T)
≅ θ
ch-bs
x [T (°C) + 273] / [150°C + 273].
AMMP-5024 RF Specifications
[3,4]
T
A
= 25°C, V
d
=7V, I
d(Q)=
200 mA, Z
in
=Z
o
=50
Ω
Symbol
Freq
Gain
Parameters and Test
Conditions
Operational Frequency
Small-signal Gain
[3, 4]
Units
Min.
GHz
dB
dB
dBm
0.000001
Specifications
Typ.
15
22
30
Max.
40
P
−
1 dB
IP
3
RLin
RLout
Isolation
Output Power at 1dB Gain
Compression
[4]
Third Order Intercept Point
[4]
;
∆f=0.1GHz;
Pin=-6 dBm
Input Return Loss
[4]
Output Return Loss
[4]
dB
dB
dB
10
10
28
Min. Reverse Isolation
3. Small/Large -signal data measured in wafer form T
A
= 25°C.
This preliminary data is provided to assist you in the evaluation of product(s) currently under development. Until Agilent Technologies
releases this product for general sales, Agilent Technologies reserves the right to alter prices, specifications, features, capabilities,
functions, release dates, and remove availability of the product(s) at anytime.
Revision Date: 28 Sept 2005
Revision Number: 1
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