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IS24L256-2WI

产品描述EEPROM, 32KX8, Serial, CMOS, PDSO8, 0.200 INCH, PLASTIC, EIAJ, SOP-8
产品类别存储    存储   
文件大小122KB,共15页
制造商Integrated Silicon Solution ( ISSI )
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IS24L256-2WI概述

EEPROM, 32KX8, Serial, CMOS, PDSO8, 0.200 INCH, PLASTIC, EIAJ, SOP-8

IS24L256-2WI规格参数

参数名称属性值
是否无铅含铅
是否Rohs认证不符合
厂商名称Integrated Silicon Solution ( ISSI )
零件包装代码SOIC
包装说明0.200 INCH, PLASTIC, EIAJ, SOP-8
针数8
Reach Compliance Codecompliant
ECCN代码EAR99
最大时钟频率 (fCLK)1 MHz
JESD-30 代码R-PDSO-G8
JESD-609代码e0
长度5.29 mm
内存密度262144 bit
内存集成电路类型EEPROM
内存宽度8
湿度敏感等级3
功能数量1
端子数量8
字数32768 words
字数代码32000
工作模式SYNCHRONOUS
最高工作温度85 °C
最低工作温度-40 °C
组织32KX8
封装主体材料PLASTIC/EPOXY
封装代码SOP
封装形状RECTANGULAR
封装形式SMALL OUTLINE
并行/串行SERIAL
峰值回流温度(摄氏度)NOT SPECIFIED
认证状态Not Qualified
座面最大高度2.16 mm
串行总线类型I2C
最大供电电压 (Vsup)3.6 V
最小供电电压 (Vsup)1.8 V
标称供电电压 (Vsup)3 V
表面贴装YES
技术CMOS
温度等级INDUSTRIAL
端子面层Tin/Lead (Sn/Pb)
端子形式GULL WING
端子节距1.27 mm
端子位置DUAL
处于峰值回流温度下的最长时间NOT SPECIFIED
宽度5.25 mm
最长写入周期时间 (tWC)5 ms
Base Number Matches1

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IS24L128
IS24L256
128K-bit/ 256K-bit
2-WIRE SERIAL CMOS EEPROM
FEATURES
• Two-Wire Serial Interface, I
2
C
TM
compatible
–Bi-directional data transfer protocol
• Low Voltage and Standard Voltage Operation
–Vcc = 1.8V to 3.6V
• 400 KHz (1.8V) and 1 MHz (2.5V, 2.7V, 3.6V)
compatibility
• Low Power CMOS Technology
–Active Current less than 3 mA (3.6V)
–Stanby Current less than 3 µA (3.6V)
–Standby Current less than 1 µA (1.8V)
• Hardware Data Protection
–Write Protect Pin
• Sequential Read Feature
• Filtered Inputs for Noise Suppression
• Self time write cycle with auto clear
–5 ms max @ 1.8V
• Organization:
IS24L128–16Kx8 (256 pages of 64 bytes)
IS24L256–32Kx8 (512 pages of 64 bytes)
• 64 Byte Page Write Buffer
• High Reliability
–Endurance: 1,000,000 Cycles
–Data Retention: 40 Years
• Industrial temperature range
• 8-pin PDIP, 8-pin (JEDEC) SOIC, and 8-pin
(EIAJ) SOIC packages
• Lead-free available
ISSI
DESCRIPTION
The IS24L128 and IS24L256 are electrically erasable
PROM devices that use the standard 2-wire interface
for communications. The IS24L128 and IS24CL256
contain a memory array of 128K-bits (16K x 8) and
256K-bits (32 x 8), respectively. Each device is
organized into 64 byte pages for page write mode.
This EEPROM operates in a voltage range of 1.8V to
3.6V for low voltage and standard voltage application
levels. ISSI designed this device family to be a
practical, low-power 2-wire EEPROM solution. The
devices are available in 8-pin PDIP, 8-pin (JEDEC)
SOIC, and 8-pin (EIAJ) SOIC packages.
®
PRELIMINARY INFORMATION
SEPTEMBER 2006
The IS24L128/256 maintains compatibility with the
popular 2-wire bus protocol, so it is easy to design into
applications implementing this bus type. The simple
bus consists of the Serial Clock wire (SCL) and the
Serial Data wire (SDA). Using the bus, a Master device
such as a microcontroller is usually connected to one
or more Slave devices such as the IS24L128/256. The
bit stream over the SDA line includes a series of bytes,
which identifies a particular Slave device, an
instruction, an address within that Slave device, and a
series of data, if appropriate. The IS24L128/256 has a
Write Protect pin (WP) to allow blocking of any write
instruction transmitted over the bus.
Copyright © 2006 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability
arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any
published information and before placing orders for products.
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. 00E
09/21/06
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