THN6301U
NPN Planer RF TRANSISTOR
SOT-323
unit : mm
□
DESCRIPTION
The THN6301U is a low Noise figure and good associated
gain performance at UHF,VHF and Microwave frequiecies
It is suitable for a high density surface mount since
transistor has been SOT323 package
□
FEATURES
o Low Noise Figure
N.F = 1.1dB TYP. @ f=1GHz, V
CE
=8V, Ic=5mA
o High Gain
MAG = 17dB TYP. @ f=1GHz, V
CE
=8V, Ic=15mA
o High Transition Frequency
f
T
= 10GHz TYP. @ f=1GHz, V
CE
=8V, Ic=15mA
PIN CONFIGURATION
PIN NO
1
2
3
SYMBOL
B
E
C
DESCRIPTION
Base
Emitter
Collector
□
MARKING : AA1
□
MAXIMUM RATINGS
SYMBOL
V
CBO
V
CEO
V
EBO
Ic
P
T
T
STG
T
J
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Total Power Dissipation
Storage Temperature
Operating Junction Temperature
Ts = 60℃
CONDITION
Open Emitter
Open Base
Open Collector
VALUE
25
12
2.5
65
150
-65 ~ 150
150
Unit
V
V
V
mA
mW
℃
℃
www.tachyonics.co.kr
- 1/10 -
Sep-2003
Rev 1.1
THN6301U
□
Electrical Characteristics
( T
A
= 25
℃
)
SYMBOL
PARAMETER
CONDITION
min
V
CBO
V
CEO
I
CBO
I
EBO
hfe
Collector-Base Voltage
I
CE
= 100uA, I
E
= 0
20
12
VALUE
typ
25
14
100
100
100
200
10
0.55
300
GHz
pF
max
V
V
nA
nA
Unit
Collector-Emitter Voltage I
CE
= 100uA, I
B
= 0
Collector-Cut-off current
Emitter-Cut-off current
D.C current Gain
Transition Frequency
V
CB
= 10V, I
E
= 0
V
EB
= 1V, I
C
= 0
V
CE
= 8V, Ic = 15mA
V
CE
= 8V, Ic = 15mA
f
T
C
CB
Collector-Base Capacitance
V
CB
= 10V, f = 1MHz
□
Performance Characteristics
SYMBOL
PARAMETER
CONDITION
min
[S21]
2
VALUE
typ
11.5
max
Unit
V
CE
=8V, Ic=5mA,f=1GHz
Insertion Power Gain
V
CE
=8V, Ic=15mA,f=1GHz
V
CE
=8V, Ic=5mA,f=1GHz
Maximum Stable Gain
V
CE
=8V, Ic=15mA,f=1GHz
dB
13.5
16
dB
17
1.1
0.055
14.5
dB
V
CE
=8V, Ic=15mA,f=1GHz
15
27
dBm
V
CE
=8V, Ic=15mA,f=1GHz
dB
Ω
MSG
NFmin
rn
G
A
OIP
3
Minimum Noise Figure V
CE
=8V, Ic=5mA,f=1GHz
Noise Resistance
Associated Gain
Output 3rd Intercept
V
CE
=8V, Ic=5mA,f=1GHz
V
CE
=8V, Ic=5mA,f=1GHz
www.tachyonics.co.kr
- 2/10 -
Sep-2003
Rev 1.1
THN6301U
Total power dissipation
Pt = f(T
A
)
( T
A
= 25
℃
)
Icc vs. V
CE
20
18
Pt[mW]-Total power dissipation
200
Ib=200uA step
Ib=160uA step
16
14
Ic e ( m A )
12
10
8
6
4
2
Ib=120uA step
Ib=80uA step
Ib=40uA step
0
2
4
6
8
10
100
0
0
50
100
150
0
T
A
[℃]-Ambient Temperature
Vce(V)
V
CE
[V]
Icc vs. V
BE
hfe vs. Icc
20
200
V
CE
= 8[V]
15
100
80
60
V
CE
= 8[V]
Ic ( m A )
h fe
0.0
0.2
0.4
0.6
0.8
1.0
10
40
5
20
0
1
2
3
4 5 6 7 89
20
30 40 50
Vbe(V)
V
BE
[V]
I
CE
Ice(mA)
[mA]
www.tachyonics.co.kr
- 3/10 -
Sep-2003
Rev 1.1
THN6301U
Power Gain : MSG vs. Frequency
Power Gain : S
21
vs. Frequency
aG
a
( , ))
_
dB(S(2,1))
S21[dB]
_
22
18
20
16
503_so 3 3_da a _3 5 _0 0 3
M
Gain [dB]
MAX
axGain1
18
14
16
14
V
CE
=8V
Icc=15mA
12
V
CE
=8V
Icc=15mA
10
12
_
8
10
8
V
CE
=3V
Icc=15mA
(
_
6
V
CE
=3V
Icc=15mA
6
0.5
1.0
1.5
2.0
2.5
3.0
4
0.5
1.0
1.5
2.0
2.5
3.0
freq, GHz
freq, GHz
Transition Frequency : f
T
vs. Icc
12
Power Gain : MSG vs. Icc
18
V
CE
=8V
17
10
16
8
15
f = 1GHz
V
CE
=8V
V
CE
=3V
6
Gms [dB]
f
T
[GHz]
14
13
12
V
CE
=3V
4
2
V
CE
=2V
11
V
CE
=2V
0
5
10
15
20
25
30
35
0
0
5
10
15
20
25
30
35
Icc [mA]
10
Icc [mA]
www.tachyonics.co.kr
- 4/10 -
Sep-2003
Rev 1.1
THN6301U
Intermodulation Intercept Point
IP3=f(Ic)
(Z
S
=Z
L
= 50
Ω)
35
C
CB
vs. V
CB
0.8
V
CE
=8V
30
0.75
0.7
Capacitance C
CB
[pF]
f = 1MHz
25
0.65
0.6
0.55
0.5
0.45
0.4
0.35
0.3
V
CE
=6V
IP
3
[dbm]
20
15
10
5
V
CE
=3V
0
0
5
10
15
20
25
30
35
Ic [mA]
0
5
10
V
CB
[V]
15
20
Fmin vs. Icc
V
CE
= 8V, Icc = parameter, Zs = Zsopt
Noise Figure Contours & Constant Gain
f = 1 GHz, V
CE
= 8V, Icc = 5mA
f = 1GHz
2.6
Output Stable
Input Stable
2.1
Fmin [dB]
Γ
OPT
=0.355∠153
Fmin =1.0dB
=1.1dB
=1.2dB
=1.3dB
4 contour
1.6
1.1
Ga=16dB
=15dB
=14dB
=13dB
4 contour
0.6
0
5
10
15
20
25
Icc [mA]
www.tachyonics.co.kr
- 5/10 -
Sep-2003
Rev 1.1
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