BUK9275-100A
N-channel TrenchMOS logic level FET
Rev. 03 — 15 June 2010
Product data sheet
1. Product profile
1.1 General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
Low conduction losses due to low
on-state resistance
Q101 compliant
Suitable for logic level gate drive
sources
Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
12 V, 24 V and 42 V loads
Automotive and general purpose
power switching
1.4 Quick reference data
Table 1.
Symbol
V
DS
I
D
P
tot
Quick reference data
Parameter
drain-source
voltage
drain current
total power
dissipation
drain-source
on-state
resistance
Conditions
T
j
≥
25 °C; T
j
≤
175 °C
V
GS
= 5 V; T
mb
= 25 °C;
see
Figure 1;
see
Figure 3
T
mb
= 25 °C; see
Figure 2
Min
-
-
-
Typ
-
-
-
Max Unit
100
V
21.7 A
88
W
Static characteristics
R
DSon
V
GS
= 4.5 V; I
D
= 10 A;
T
j
= 25 °C
V
GS
= 10 V; I
D
= 10 A;
T
j
= 25 °C
V
GS
= 5 V; I
D
= 10 A;
T
j
= 25 °C;
see
Figure 12;
see
Figure 13
Avalanche ruggedness
E
DS(AL)S
non-repetitive
I
D
= 14 A; V
sup
≤
100 V;
drain-source
R
GS
= 50
Ω;
V
GS
= 5 V;
avalanche energy T
j(init)
= 25 °C; unclamped
-
-
100
mJ
-
-
-
-
62
64
84
72
75
mΩ
mΩ
mΩ
NXP Semiconductors
BUK9275-100A
N-channel TrenchMOS logic level FET
2. Pinning information
Table 2.
Pin
1
2
3
mb
Pinning information
Symbol Description
G
D
S
D
gate
drain
source
mounting base; connected to
drain
2
1
3
mb
D
Simplified outline
Graphic symbol
G
mbb076
S
SOT428 (DPAK)
3. Ordering information
Table 3.
Ordering information
Package
Name
BUK9275-100A
DPAK
Description
plastic single-ended surface-mounted package (DPAK); 3 leads
(one lead cropped)
Version
SOT428
Type number
4. Limiting values
Table 4.
Symbol
V
DS
V
DGR
V
GS
I
D
Limiting values
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
T
mb
= 25 °C; V
GS
= 5 V; see
Figure 1;
see
Figure 3
T
mb
= 100 °C; V
GS
= 5 V; see
Figure 1
I
DM
P
tot
T
stg
T
j
V
GSM
peak drain current
total power dissipation
storage temperature
junction temperature
peak gate-source
voltage
source current
peak source current
non-repetitive
drain-source
avalanche energy
pulsed; t
p
≤
50 µs
T
mb
= 25 °C; t
p
≤
10 µs; pulsed;
see
Figure 3
T
mb
= 25 °C; see
Figure 2
[1]
In accordance with the Absolute Maximum Rating System (IEC 60134).
Conditions
T
j
≥
25 °C; T
j
≤
175 °C
R
GS
= 20 kΩ
Min
-
-
-10
-
-
-
-
-55
-55
-15
Typ
-
-
-
-
-
-
-
-
-
-
Max
100
100
10
21.7
15.3
87
88
175
175
15
Unit
V
V
V
A
A
A
W
°C
°C
V
Source-drain diode
I
S
I
SM
E
DS(AL)S
T
mb
= 25 °C
t
p
≤
10 µs; pulsed; T
mb
= 25 °C
I
D
= 14 A; V
sup
≤
100 V; R
GS
= 50
Ω;
V
GS
= 5 V; T
j(init)
= 25 °C; unclamped
All information provided in this document is subject to legal disclaimers.
-
-
-
-
-
-
21.7
87
100
A
A
mJ
Avalanche ruggedness
BUK9275-100A
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 03 — 15 June 2010
2 of 13
NXP Semiconductors
BUK9275-100A
N-channel TrenchMOS logic level FET
[1]
Peak drain current is limited by chip, not package.
120
I
der
(%)
80
03aa24
120
P
der
(%)
80
03aa16
40
40
0
0
50
100
150
T
mb
(°C)
200
0
0
50
100
150
T
mb
(°C)
200
Fig 1.
Normalized continuous drain current as a
function of mounting base temperature
10
3
I
D
(A)
10
2
R
DSon
= V
DS
/ I
D
Fig 2.
Normalized total power dissipation as a
function of mounting base temperature
03na79
tp = 10
μs
10
D.C.
1
100 ms
100
μs
1 ms
10 ms
10
−1
1
10
10
2
V
DS
(V)
10
3
Fig 3.
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
BUK9275-100A
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 03 — 15 June 2010
3 of 13
NXP Semiconductors
BUK9275-100A
N-channel TrenchMOS logic level FET
5. Thermal characteristics
Table 5.
Symbol
R
th(j-mb)
Thermal characteristics
Parameter
thermal resistance
from junction to
mounting base
thermal resistance
from junction to
ambient
see
Figure 4
Conditions
Min
-
Typ
-
Max
1.7
Unit
K/W
R
th(j-a)
-
71.4
-
K/W
10
Z
th(j-mb)
(K/W)
03na80
1
δ
= 0.5
0.2
0.1
t
p
T
10
−1
0.05
0.02
P
δ
=
t
p
t
T
10
−2
10
−6
Single Shot
10
−5
10
−4
10
−3
10
−2
10
−1
t
p
(s)
1
Fig 4.
Transient thermal impedance from junction to ambient as a function of pulse duration
BUK9275-100A
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 03 — 15 June 2010
4 of 13
NXP Semiconductors
BUK9275-100A
N-channel TrenchMOS logic level FET
6. Characteristics
Table 6.
Symbol
V
(BR)DSS
V
GS(th)
Characteristics
Parameter
drain-source
breakdown voltage
gate-source threshold
voltage
Conditions
I
D
= 0.25 mA; V
GS
= 0 V; T
j
= 25 °C
I
D
= 0.25 mA; V
GS
= 0 V; T
j
= -55 °C
I
D
= 1 mA; V
DS
= V
GS
; T
j
= 25 °C;
see
Figure 11
I
D
= 1 mA; V
DS
= V
GS
; T
j
= 175 °C;
see
Figure 11
I
D
= 1 mA; V
DS
= V
GS
; T
j
= -55 °C;
see
Figure 11
I
DSS
I
GSS
R
DSon
drain leakage current
gate leakage current
drain-source on-state
resistance
V
DS
= 100 V; V
GS
= 0 V; T
j
= 175 °C
V
DS
= 100 V; V
GS
= 0 V; T
j
= 25 °C
V
DS
= 0 V; V
GS
= 10 V; T
j
= 25 °C
V
DS
= 0 V; V
GS
= -10 V; T
j
= 25 °C
V
GS
= 5 V; I
D
= 10 A; T
j
= 175 °C;
see
Figure 12;
see
Figure 13
V
GS
= 4.5 V; I
D
= 10 A; T
j
= 25 °C
V
GS
= 10 V; I
D
= 10 A; T
j
= 25 °C
V
GS
= 5 V; I
D
= 10 A; T
j
= 25 °C;
see
Figure 12;
see
Figure 13
Dynamic characteristics
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
input capacitance
output capacitance
reverse transfer
capacitance
turn-on delay time
rise time
turn-off delay time
fall time
internal drain
inductance
internal source
inductance
measured from drain lead from package
to centre of die ; T
j
= 25 °C
measured from source lead from
package to source bond pad ;
T
j
= 25 °C
I
S
= 10 A; V
GS
= 0 V; T
j
= 25 °C;
see
Figure 15
I
S
= 20 A; dI
S
/dt = -100 A/µs;
V
GS
= -10 V; V
DS
= 30 V; T
j
= 25 °C
V
DS
= 30 V; R
L
= 1.2
Ω;
V
GS
= 5 V;
R
G(ext)
= 10
Ω;
T
j
= 25 °C
V
GS
= 0 V; V
DS
= 25 V; f = 1 MHz;
T
j
= 25 °C; see
Figure 14
-
-
-
-
-
-
-
-
-
1268
139
90
13
120
58
57
2.5
7.5
1690
167
124
-
-
-
-
-
-
pF
pF
pF
ns
ns
ns
ns
nH
nH
Min
100
89
1
0.5
-
-
-
-
-
-
-
-
-
Typ
-
-
1.5
-
-
-
0.05
2
2
-
-
62
64
Max
-
-
2
-
2.3
500
10
100
100
188
84
72
75
Unit
V
V
V
V
V
µA
µA
nA
nA
mΩ
mΩ
mΩ
mΩ
Static characteristics
Source-drain diode
V
SD
t
rr
Q
r
source-drain voltage
reverse recovery time
recovered charge
-
-
-
0.85
63
220
1.2
-
-
V
ns
nC
BUK9275-100A
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 03 — 15 June 2010
5 of 13
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
