PD - 93861
IRFR2405
IRFU2405
Surface Mount (IRFR2405)
l
Straight Lead (IRFU2405)
l
Advanced Process Technology
l
Dynamic dv/dt Rating
l
Fast Switching
l
Fully Avalanche Rated
Description
l
HEXFET
®
Power MOSFET
D
V
DSS
= 55V
G
S
R
DS(on)
= 0.016Ω
I
D
= 56A
Seventh Generation HEXFET
®
Power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance per
silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that
HEXFET power MOSFETs are well known for, provides
the designer with an extremely efficient and reliable
device for use in a wide variety of applications.
The D-Pak is designed for surface mounting using
vapor phase, infrared, or wave soldering techniques.
The straight lead version (IRFU series) is for through-
hole mounting applications. Power dissipation levels
up to 1.5 watts are possible in typical surface mount
applications.
D-Pak
IRFR2405
I-Pak
IRFU2405
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
56
40
220
110
0.71
± 20
130
34
11
5.0
-55 to + 175
300 (1.6mm from case )
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Thermal Resistance
Parameter
R
θJC
R
θJA
R
θJA
Junction-to-Case
Junction-to-Ambient (PCB mount)*
Junction-to-Ambient
Typ.
–––
–––
–––
Max.
1.4
50
110
Units
°C/W
* When mounted on 1" square PCB (FR-4 or G-10 Material) .
For recommended footprint and soldering techniques refer to application note #AN-994
www.irf.com
1
3/1/00
IRFR/U2405
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
V
(BR)DSS
∆V
(BR)DSS
/∆T
J
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
C
oss
C
oss
C
oss
eff.
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Min.
55
–––
–––
2.0
30
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ. Max. Units
Conditions
––– –––
V
V
GS
= 0V, I
D
= 250µA
0.052 ––– V/°C Reference to 25°C, I
D
= 1mA
0.0118 0.016
Ω
V
GS
= 10V, I
D
= 34A
––– 4.0
V
V
DS
= 10V, I
D
= 250µA
––– –––
S
V
DS
= 25V, I
D
= 34A
––– 20
V
DS
= 55V, V
GS
= 0V
µA
––– 250
V
DS
= 44V, V
GS
= 0V, T
J
= 150°C
––– 200
V
GS
= 20V
nA
––– -200
V
GS
= -20V
70 110
I
D
= 34A
16
23
nC
V
DS
= 44V
19
29
V
GS
= 10V
15 –––
V
DD
= 28V
130 –––
I
D
= 34A
ns
55 –––
R
G
= 6.8Ω
78 –––
V
GS
= 10V
D
Between lead,
4.5 –––
6mm (0.25in.)
nH
G
from package
7.5 –––
and center of die contact
S
2430 –––
V
GS
= 0V
470 –––
pF
V
DS
= 25V
100 –––
ƒ = 1.0MHz, See Fig. 5
2040 –––
V
GS
= 0V, V
DS
= 1.0V, ƒ = 1.0MHz
350 –––
V
GS
= 0V, V
DS
= 44V, ƒ = 1.0MHz
350 –––
V
GS
= 0V, V
DS
= 0V to 44V
Source-Drain Ratings and Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
D
MOSFET symbol
––– ––– 56
showing the
A
G
integral reverse
––– ––– 220
S
p-n junction diode.
––– ––– 1.3
V
T
J
= 25°C, I
S
= 34A, V
GS
= 0V
––– 62
93
ns
T
J
= 25°C, I
F
= 34A
––– 170 260
nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Starting T
J
= 25°C, L = 0.22mH
R
G
= 25Ω, I
AS
= 34A.
I
SD
≤
34A, di/dt
≤
190A/µs, V
DD
≤
V
(BR)DSS
,
T
J
≤
175°C
Pulse width
≤
300µs; duty cycle
≤
2%.
C
oss
eff. is a fixed capacitance that gives the same charging time
as C
oss
while V
DS
is rising from 0 to 80% V
DSS
Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 30A
2
www.irf.com
IRFR/U2405
1000
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
1000
I
D
, Drain-to-Source Current (A)
100
I
D
, Drain-to-Source Current (A)
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
TOP
100
4.5V
20µs PULSE WIDTH
T
J
= 175
°
C
1
10
100
4.5V
10
0.1
20µs PULSE WIDTH
T
J
= 25
°
C
1
10
100
10
0.1
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
1000
2.5
I
D
= 56A
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
I
D
, Drain-to-Source Current (A)
2.0
T
J
= 25
°
C
T
J
= 175
°
C
1.5
100
1.0
0.5
10
4.0
V DS = 25V
20µs PULSE WIDTH
5.0
6.0
7.0
8.0
9.0
10.0
0.0
-60 -40 -20
V
GS
= 10V
0
20 40 60 80 100 120 140 160 180
V
GS
, Gate-to-Source Voltage (V)
T
J
, Junction Temperature (
°
C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
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3
IRFR/U2405
4000
V
GS
, Gate-to-Source Voltage (V)
3200
V
GS
= 0V,
f = 1MHz
C
iss
= C
gs
+ C
gd ,
C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
20
I
D
= 34A
V
DS
= 44V
V
DS
= 27V
V
DS
= 11V
16
C, Capacitance (pF)
2400
Ciss
12
1600
8
800
Coss
Crss
4
0
1
10
100
0
0
20
40
FOR TEST CIRCUIT
SEE FIGURE 13
60
80
100
V
DS
, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
1000
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
I
SD
, Reverse Drain Current (A)
I
D
, Drain Current (A)
100
100
10us
T
J
= 175
°
C
100us
10
1ms
T
J
= 25
°
C
10
1
0.4
V
GS
= 0 V
0.8
1.2
1.6
2.0
2.4
1
1
T
C
= 25 ° C
T
J
= 175 ° C
Single Pulse
10
10ms
100
V
SD
,Source-to-Drain Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
www.irf.com
IRFR/U2405
60
V
DS
LIMITED BY PACKAGE
R
D
50
V
GS
R
G
D.U.T.
+
I
D
, Drain Current (A)
-
V
DD
40
V
GS
30
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
20
Fig 10a.
Switching Time Test Circuit
V
DS
90%
10
0
25
50
75
100
125
150
175
T
C
, Case Temperature ( ° C)
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 9.
Maximum Drain Current Vs.
Case Temperature
Fig 10b.
Switching Time Waveforms
10
Thermal Response (Z
thJC
)
1
D = 0.50
0.20
0.10
0.1
0.05
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
t
1
t
2
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.0001
0.001
0.01
0.1
P
DM
0.01
0.00001
t
1
, Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
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