PXFC193808SV
Thermally-Enhanced High Power RF LDMOS FET
380 W, 28 V, 1805 – 1880 MHz
Description
The PXFC193808SV is a 380-watt LDMOS FET intended for use in
multi-standard cellular power amplifier applications in the 1805 to 1880
MHz frequency band. Features include input and output matching,
high gain and a thermally-enhanced package with earless flange.
Manufactured with Infineon's advanced LDMOS process, this device
provides excellent thermal performance and superior reliability.
PXFC193808SV
Package H-37275G-6/2
Single-carrier WCDMA Drive-up
V
DD
= 28 V, I
DQ
= 2850 mA, ƒ = 1880 MHz
3GPP WCDMA signal,
10 dB PAR, 3.84 MHz bandwidth
24
60
Features
•
•
Broadband internal input and output matching
Typical pulsed CW performance, 1842.5 MHz, 28 V,
- Output power at P
1dB
= 380 W
- Efficiency = 54.9%
- Gain = 21 dB
Integrated ESD protection
ESD: Human Body Model, Class 2 (per ANSI/
ESDA/JEDEC JS-001)
Capable of handling 10:1 VSWR @28 V, 200 W
(1-C WCDMA) output power
Low thermal resistance
Pb-free and RoHS compliant
Peak/Average (dB), Gain (dB)
20
16
12
8
4
0
25
Gain
Efficiency
40
20
0
-20
•
Efficiency (%)
•
•
•
•
PAR @ 0.01% CCDF
c193808sv-gr1c
-40
-60
55
30
35
40
45
50
Average Output Power (dBm)
RF Characteristics
Single-carrier WCDMA Specifications
(tested in Infineon Doherty test fixture)
V
DD
= 28 V, I
DQ
= 2880 mA, P
OUT
= 80 W avg, ƒ = 1880 MHz.
3GPP signal, 3.84 MHz channel bandwidth, 10 dB peak/average @ 0.01% probability on CCDF.
Characteristic
Gain
Drain Efficiency
Adjacent Channel Power Ratio
Symbol
G
ps
Min
19.5
28.5
—
Typ
21
30.3
–33.5
Max
—
—
–32
Unit
dB
%
dBc
η
D
ACPR
All published data at T
CASE
= 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 10
Rev. 02.1, 2015-01-13
PXFC193808SV
DC Characteristics
(each side)
Characteristic
Drain-Source Breakdown Voltage
Drain Leakage Current
Conditions
V
GS
= 0 V, I
DS
= 10 mA
V
DS
= 28 V, V
GS
= 0 V
V
DS
= 63 V, V
GS
= 0 V
Symbol
V(
BR)DSS
I
DSS
I
DSS
I
GSS
R
DS(on)
V
GS
Min
65
—
—
—
—
2.3
Typ
—
—
—
—
0.19
2.6
Max
—
1
10
1
—
2.9
Unit
V
µA
µA
µA
Ω
V
Gate Leakage Current
On-State Resistance
Operating Gate Voltage
V
GS
= 10 V, V
DS
= 0 V
V
GS
= 10 V, V
DS
= 0.1 V
V
DS
= 28 V, I
DQ
= 2.88 A
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Operating Voltage
Junction Temperature
Storage Temperature Range
Thermal Resistance (T
CASE
= 70°C, 280 W CW)
Symbol
V
DSS
V
GS
V
DD
T
J
T
STG
R
θJC
Value
65
–6 to +10
0 to +32
225
–65 to +150
0.18
Unit
V
V
V
°C
°C
°C/W
Ordering Information
Type and Version
PXFC193808SV V1 R250
Order Code
PXFC193808SVV1R250XTMA1
Package and Description
Shipping
H-37275G-6/2, ceramic open-cavity, push-pull, earless Tape & Reel, 250 pcs
Data Sheet
2 of 10
Rev. 02.1, 2015-01-13
PXFC193808SV
Typical Performance
(data taken in an Infineon production test fixture)
Single-carrier WCDMA Drive-up
V
DD
= 28 V, I
DQ
= 2850 mA, ƒ = 1805 MHz
3GPP WCDMA signal,
10 dB PAR, 3.84 MHz bandwidth
24
60
Single-carrier WCDMA Drive-up
V
DD
= 28 V, I
DQ
= 2850 mA, ƒ = 1842.5 MHz
3GPP WCDMA signal,
10 dB PAR, 3.84 MHz bandwidth
24
60
Peak/Average (dB), Gain (dB)
Peak/Average (dB), Gain (dB)
Gain
20
16
12
8
4
0
25
30
35
40
45
50
40
20
16
12
8
4
0
25
Gain
Efficiency
40
20
0
-20
Efficiency
20
0
-20
Efficiency (%)
PAR @ 0.01% CCDF
c193808sv-gr1a
-40
-60
PAR @ 0.01% CCDF
-40
c193808sv-gr1b
-60
55
30
35
40
45
50
55
Average Output Power (dBm)
Average Output Power (dBm)
Single-carrier WCDMA Drive-up
V
DD
= 28 V, I
DQ
= 2850 mA,
ƒ = 1805.0, 1842.5, 1880.0 MHz,
3GPP WCDMA signal, 10 dB PAR, 3.84 MHz BW
-10
60
1805.0 MHz
1842.5 MHz
1880.0 MHz
50
25
Single-carrier WCDMA Broadband
V
DD
= 28 V, I
DQ
= 2850 mA, P
OUT
= 49 dBm,
3GPP WCDMA signal, 10 dB PAR
50
ACP Up (dBc), ACP Low (dBc)
-20
-30
-40
-50
20
40
ACP Up & Low
Gain (dB)
40
30
20
15
30
Efficiency
10
20
Efficiency
-60
-70
27
32
37
42
47
52
c193808sv-gr2
10
0
5
1700
c193808sv-gr3a
57
1800
1900
10
2000
Average Output Power (dBm)
Frequency (MHz)
Data Sheet
3 of 10
Rev. 02.1, 2015-01-13
Drain Efficiency (%)
Drain Efficiency(%)
Gain
Efficiency (%)
PXFC193808SV
Typical Performance
(cont.)
Single-carrier WCDMA Broadband
V
DD
= 28 V, I
DQ
= 2850 mA, P
OUT
= 49 dBm,
3GPP WCDMA signal, 10 dB PAR
-10
0
24
Pulsed CW Performance
V
DD
= 28 V, I
DQ
= 2850 mA
70
ACP Up (dBc), ACP Low (dBc)
Input Return Loss (dB)
-15
-20
-25
-30
-35
-40
1700
c193808sv-gr3b
-5
-10
22
20
Gain
60
ACP Up
ACP Low
Return Loss
-15
-20
-25
-30
2000
18
16
14
1805.0 MHz
1842.5 MHz
1880.0 MHz
40
30
20
Efficiency
12
10
37
42
47
52
c193808sv-gr4
10
0
1800
1900
57
Frequency (MHz)
Output Power (dBm)
Pulsed CW Performance
at selected V
DD
I
DQ
= 2850 mA, ƒ = 1805 MHz
24
22
70
60
24
22
Pulsed CW Performance
at selected V
DD
I
DQ
= 2850 mA, ƒ = 1842.5 MHz
70
Gain
Power Gain (dB)
Power Gain (dB)
20
18
16
14
12
10
33
37
41
45
49
53
57
c193808sv-gr5a
Gain
V
DD
= 24 V
V
DD
= 28 V
V
DD
= 32 V
60
V
DD
= 24 V
V
DD
= 28 V
V
DD
= 32 V
40
30
Efficiency (%)
18
16
14
40
30
20
Efficiency
20
10
0
Efficiency
12
10
33
37
41
45
49
53
57
c193808sv-gr5b
10
0
61
61
Output Power (dBm)
Output Power (dBm)
Data Sheet
4 of 10
Rev. 02.1, 2015-01-13
Efficiency (%)
50
20
50
Efficiency (%)
50
Gain (dB)
PXFC193808SV
Typical Performance
(cont.)
Pulsed CW Performance
at selected V
DD
I
DQ
= 2850 mA, ƒ = 1880 MHz
24
22
70
24
22
CW Performance Small Signal
Gain & Input Return Loss
V
DD
= 28 V, I
DQ
= 3500 mA
0
Power Gain (dB)
Power Gain (dB)
18
16
14
V
DD
= 24 V
V
DD
= 28 V
V
DD
= 32 V
Efficiency (%)
20
50
40
30
20
20
-10
Gain
18
16
14
12
-15
-20
-25
Efficiency
12
10
33
37
41
45
49
53
57
c193808sv-gr5c
10
0
Return Loss
c193808sv-gr6
-30
61
-35
10
1650 1700 1750 1800 1850 1900 1950 2000
Output Power (dBm)
Frequency (MHz)
See next page for circuit impedance and device load pull performance
Data Sheet
5 of 10
Rev. 02.1, 2015-01-13
Input Return Loss (dB)
Gain
60
-5
NXP MCU
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
