H
T-1
3
/
4
(5 mm), T-1 (3 mm), High
Performance AlInGaP LED
Lamps
Technical Data
SunPower Series
HLMA-CX00 Series
HLMA-DX00 Series
HLMA-KX00 Series
HLMT-CX00 Series
HLMT-DX00 Series
Features
• Outstanding LED Material
Efficiency
• High Light Output over a
Wide Range of Currents
• Low Electrical Power
Dissipation
• CMOS/MOS Compatible
• Colors: 590/592 nm Amber,
615/617 nm and 622 nm
Reddish-Orange
• Variety of Packages Available
Description
These untinted, non-diffused, solid
state lamps utilize the latest
absorbing/transparent substrate
aluminum indium gallium phos-
phide (AS/TS AlInGaP) LED tech-
nology. These materials have a very
high luminous efficiency, capable
of producing high light output over
a wide range of drive currents. In
addition, these LED lamps are at
wavelengths ranging from amber
to reddish orange and at viewing
angles ranging from 7 to 45
degrees.
Applications
• Outdoor Message Boards
• Safety Lighting Equipment
• Signaling Applications
• Emitter for Emitter/
Detector Applications
• Changeable Message Signs
• Portable Equipment
• Medical Equipment
• Automotive Lighting
• Alternative to Incandescent
Lamps
5963-2323E
1-37
Package Dimensions
5.08 (0.200)
4.57 (0.180)
9.19 (0.362)
8.43 (0.332)
12.70 (0.500)
11.94 (0.470)
0.89 (0.035)
0.64 (0.025)
5.08 (0.200)
4.57 (0.180)
3.18 (0.125)
2.67 (0.105)
3.43 (0.135)
2.92 (0.115)
4.70 (0.185)
4.19 (0.165)
9.19 (0.362)
8.43 (0.332)
0.89 (0.035)
0.64 (0.025)
6.35 (0.250)
5.58 (0.220)
1.02
(0.040) NOM.
0.45 SQUARE NOMINAL
(0.018)
25.40
MIN.
(1.00)
CATHODE
LEAD
23.0
MIN.
(0.90)
1.65 (0.065)
1.35 (0.053)
CATHODE
LEAD
NOTE 1
25.40
MIN.
(1.00)
0.102 (0.004)
MAX. TYP.
1.27
NOM.
(0.050)
2.54 NOM.
(0.100)
1.27 NOM.
(0.050)
0.64 SQUARE
(0.025) NOMIMAL
1.27 NOM.
(0.050)
0.46 SQUARE
(0.018) NOMIMAL
CATHODE
6.10 (0.240)
5.59 (0.220)
6.10 (0.240)
5.59 (0.220)
2.54 NOM.
(0.100)
2.54 NOM.
(0.100)
NOTES
A
NOTES:
1. ALL DIMENSIONS ARE IN MILLIMETERS (INCHES).
2. THE LEADS ARE MILD STEEL, SOLDER DIPPED.
3. AN EPOXY MENISCUS MAY EXTEND ABOUT 1 MM (0.040")
DOWN THE LEADS, UNLESS OTHERWISE NOTED.
B
C
1-38
(T-1
3
/
4
Package)
DC Forward Current
[1,4,5]
........................................................... 50 mA
Peak Forward Current
[2]
........................................................... 200 mA
Time Average Input Power
[2]
................................................... 103 mW
Transient Forward Current
[3]
(10
µs
Pulse) .............................. 500 mA
Reverse Voltage (I
R
= 100
µA)
......................................................... 5 V
Operating Temperature Range .......................................... -40 to 100°C
Storage Temperature ......................................................... -40 to 120°C
Junction Temperature ................................................................. 130°C
Soldering Temperature .......................................... 260°C for 5 seconds
[1.59 mm (0.06 in.) below seating plane]
Notes:
1. Derate linearly as shown in Figure 4.
2. Any pulsed operation cannot exceed the Absolute Max Peak Forward Current or the
Max Allowable Time Average Power as specified in Figure 5.
3. The transient peak current is the maximum nonrecurring peak current the device can
withstand without damaging the LED die and wire bonds.
4. Drive Currents between 10 and 30 mA are recommended for best long term
performance.
5. Operation at currents below 10 mA is not recommended, please contact your
Hewlett-Packard sales representative.
Absolute Maximum Ratings at T
A
= 25
°
C
DC Forward Current
[1,4,5]
........................................................... 50 mA
Peak Forward Current
[2]
........................................................... 200 mA
Time Average Input Power
[2]
................................................... 103 mW
Transient Forward Current
[3]
(10
µs
Pulse) .............................. 500 mA
Reverse Voltage (I
R
= 100
µA)
......................................................... 5 V
Operating Temperature Range .......................................... -40 to 100°C
Storage Temperature ......................................................... -40 to 100°C
Junction Temperature .................................................................. 110°C
Solder Temperature ................................................ 260°C for 5 seconds
[1.59 mm (0.06 in.) below seating plane]
Notes:
1. Derate linearly as shown in Figure 4.
2. Any pulsed operation cannot exceed the Absolute Max Peak Forward Current or the
Max Allowable Time Average Power as specified in Figure 5.
3. The transient peak current is the maximum nonrecurring peak current the device can
withstand without damaging the LED die and wire bonds.
4. Drive Currents between 10 mA and 30 mA are recommended for best long term
performance.
5. Operation at currents below 10 mA is not recommended, please contact your
Hewlett-Packard sales representative.
Absolute Maximum Ratings at T
A
= 25
°
C
(T-1 Package)
1-39
Optical Characteristics at T
A
= 25
°
C
TS-AlInGaP T-1
3
/
4
Luminous
Intensity
I
V
(mcd)
@ 20 mA
[1]
Min.
Typ.
2600
8300
2900
9000
450
1500
500
1800
Peak
Wavelength
λ
peak
(nm)
Typ.
594
623
594
623
Color,
Dominant
Wavelength
λ
d[2]
(nm)
Typ.
592
617
592
617
Viewing Angle
2θ
1
/
2
Degrees
[3]
Typ.
8
8
24
24
Luminous
Efficacy
η
v
(lm/w)
480
263
480
263
Part
Number
HLMT-
CL00
[1]
CH00
[1]
DL00
[4]
DH00
[4]
Package
Drawing
A
B
Notes:
1. The luminous intensity, I
V
, is measured at the peak of the spatial radiation pattern which may not be aligned with the mechanical axis
of the lamp package.
2. The dominant wavelength,
λ
d
, is derived from the CIE Chromaticity Diagram and represents the color of the device.
3.
θ
1/2
is the off-axis angle where the luminous intensity is 1/2 the peak intensity.
4. The luminous intensity, I
v
, is measured at the mechanical axis of the lamp package. The actual peak of the spatial radiation pattern
may not be aligned with this axis.
AS-AlInGaP T-1
3
/
4
Luminous
Intensity
I
V
(mcd)
@ 20 mA
[1]
Min.
Typ.
1000
3500
1000
3500
300
800
290
600
290
500
Peak
Wavelength
λ
peak
(nm)
Typ.
592
621
592
621
630
Color,
Dominant
Wavelength
λ
d[2]
(nm)
Typ.
590
615
590
615
622
Viewing Angle
2θ
1
/
2
Degrees
[3]
Typ.
7
7
24
24
24
Luminous
Efficacy
η
v
(lm/w)
480
263
480
263
197
Part
Number
HLMA-
CL00
[1]
CH00
[1]
DL00
[4]
DH00
[4]
DG00
[4]
Package
Drawing
A
B
Notes:
1. The luminous intensity, I
V
, is measured at the peak of the spatial radiation pattern which may not be aligned with the mechanical axis
of the lamp package.
2. The dominant wavelength,
λ
d
, is derived from the CIE Chromaticity Diagram and represents the color of the device.
3.
θ
1/2
is the off-axis angle where the luminous intensity is 1/2 the peak intensity.
4. The luminous intensity, I
v
, is measured at the mechanical axis of the lamp package. The actual peak of the spatial radiation pattern
may not be aligned with this axis.
AS-AlInGaP T-1
Luminous
Intensity
I
V
(mcd)
@ 20 mA
[1]
Min.
Typ.
35
200
35
200
Peak
Wavelength
λ
peak
(nm)
Typ.
592
621
Color,
Dominant
Wavelength
λ
d[2]
(nm)
Typ.
590
615
Viewing Angle
2θ
1
/
2
Degrees
[3]
Typ.
45
45
Luminous
Efficacy
η
v
(lm/w)
480
263
Part
Number
HLMA-
KL00
KH00
Package
Drawing
C
Notes:
1. The luminous intensity, I
v
, is measured at the mechanical axis of the lamp package. The actual peak of the spatial radiation pattern
may not be aligned with this axis.
2. The dominant wavelength,
λ
d
, is derived from the CIE Chromaticity Diagram and represents the color of the device.
3.
θ
1/2
is the off-axis angle where the luminous intensity is 1/2 the peak intensity.
1-40
Electrical Characteristics at T
A
= 25
°
C
TS-AlInGaP T-1
3
/
4
Forward
Voltage
V
F
(Volts)
@ I
F
= 20 mA
Typ.
Max.
2.0
2.4
2.0
2.4
2.0
2.4
2.0
2.4
Reverse
Breakdown
V
R
(Volts)
@ I
R
= 100
µ
A
Min.
Typ.
5
25
5
25
5
25
5
25
Capacitance
C (pF)
V
F
= 0,
f = 1 MHz
Typ.
70
70
70
70
Speed of
Response
τ
s
(ns)
Time Constant
e
-t/τs
Typ.
13
13
13
13
Part
Number
HLMT-
CL00
CH00
DL00
DH00
Thermal
Resistance
Rθ
J-PIN
(
°
C/W)
210
210
260
260
AS-AlInGaP T-1
3
/
4
Forward
Voltage
V
F
(Volts)
@ I
F
= 20 mA
Typ.
Max.
1.9
2.4
1.9
2.4
1.9
2.4
1.9
2.4
1.9
2.4
Reverse
Breakdown
V
R
(Volts)
@ I
R
= 100
µ
A
Min.
Typ.
5
25
5
25
5
25
5
25
5
25
Capacitance
C (pF)
V
F
= 0,
f = 1 MHz
Typ.
40
40
40
40
40
Speed of
Response
τ
s
(ns)
Time Constant
e
-t/τs
Typ.
13
13
13
13
13
Part
Number
HLMA-
CL00
CH00
DL00
DH00
DG00
Thermal
Resistance
Rθ
J-PIN
(
°
C/W)
210
210
260
260
260
AS-AlInGaP T-1
Forward
Voltage
V
F
(Volts)
@ I
F
= 20 mA
Typ.
Max.
1.9
2.4
1.9
2.4
Reverse
Breakdown
V
R
(Volts)
@ I
R
= 100
µ
A
Min.
Typ.
5
25
5
25
Capacitance
C (pF)
V
F
= 0,
f = 1 MHz
Typ.
40
40
Speed of
Response
τ
s
(ns)
Time Constant
e
-t/τs
Typ.
13
13
Part
Number
HLMA-
KL00
KH00
Thermal
Resistance
Rθ
J-PIN
(
°
C/W)
290
290
1-41
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