FINAL
Am29F016
16-Megabit (2,097,152 x 8-Bit) CMOS 5.0 Volt-only,
Sector Erase Flash Memory
DISTINCTIVE CHARACTERISTICS
s
5.0 Volt
±
10% for read and write operations
— Minimizes system level power requirements
s
Compatible with JEDEC-standards
— Pinout and software compatible with
single-power supply Flash
— Superior inadvertent write protection
s
48-pin TSOP
s
44-pin SO
s
Minimum 100,000 write/erase cycles
guaranteed
s
High performance
— 70 ns maximum access time
s
Sector erase architecture
— Uniform sectors of 64 Kbytes each
— Any combination of sectors can be erased.
Also supports full chip erase
s
Group sector protection
— Hardware method that disables any combination
of sector groups from write or erase operations
(a sector group consists of 4 adjacent sectors of
64 Kbytes each)
s
Embedded Erase Algorithms
— Automatically pre-programs and erases the chip
or any sector
s
Embedded Program Algorithms
— Automatically programs and verifies data at
specified address
s
Data Polling and Toggle Bit feature for
detection of program or erase cycle
completion
s
Ready/Busy output (RY/BY)
— Hardware method for detection of program or
erase cycle completion
s
Erase Suspend/Resume
— Supports
reading or programming
data to a
sector not being erased
s
Low power consumption
— 25 mA typical active read current
— 30 mA typical program/erase current
s
Enhanced power management for standby
mode
— <1
µA
typical standby current
— Standard access time from standby mode
s
Hardware RESET pin
— Resets internal state machine to the read mode
GENERAL DESCRIPTION
The Am29F016 is a 16 Mbit, 5.0 Volt-only Flash memory
organized as 2 Megabytes of 8 bits each. The 2 Mbytes
of data is divided into 32 sectors of 64 Kbytes for flexible
erase capability. The 8 bits of data appear on DQ0–DQ7.
The Am29F016 is offered in 48-pin TSOP and 44-pin SO
packages. This device is designed to be programmed
in-system with the standard system 5.0 Volt V
CC
supply.
12.0 Volt V
PP
is not required for program or erase
operations. The device can also be reprogrammed in
standard EPROM programmers.
The standard Am29F016 offers access times of 70
ns, 90 ns, 120 ns, and 150 ns, allowing high-speed
microprocessors to operate without wait states. To
eliminate bus contention, the device has separate
chip enable (CE), write enable (WE), and output
enable (OE) controls.
The Am29F016 is entirely command set compatible
with the JEDEC single-power supply Flash standard.
Commands are written to the command register using
standard microprocessor write timings. Register
contents serve as input to an internal state-machine
that controls the erase and programming circuitry.
Write cycles also internally latch addresses and data
needed for the programming and erase operations.
Reading data out of the device is similar to reading
from 12.0 Volt Flash or EPROM devices.
The Am29F016 is programmed by executing the pro-
gram command sequence. This will invoke the Embed-
Publication#
18805
Rev:
D
Amendment/0
Issue Date:
April 1997
ded Program Algorithm which is an internal algorithm
that automatically times the program pulse widths and
verifies proper cell margin. Erase is accomplished by
executing the erase command sequence. This will in-
voke the Embedded Erase Algorithm which is an inter-
nal algorithm that automatically preprograms the array
if it is not already programmed before executing the
erase operation. During erase, the device automatically
times the erase pulse widths and verifies proper cell
margin.
This device also features a sector erase architecture.
This allows for sectors of memory to be erased and re-
programmed without affecting the data contents of
other sectors. A sector is typically erased and verified
within one second. The Am29F016 is erased when
shipped from the factory.
The Am29F016 device also features hardware sector
group protection. This feature will disable both pro-
gram and erase operations in any combination of eight
sector groups of memory.
A sector group consists of
four adjacent sectors grouped in the following pattern:
sectors 0–3, 4–7, 8–11, 12–15, 16–19, 20–23, 24–27,
and 28–31.
AMD has implemented an Erase Suspend feature that
enables the user to put erase on hold for any period of
time to read data from, or program data to, a sector that
was not being erased. Thus, true background erase
can be achieved.
The device features single 5.0 Volt power supply oper-
ation for both read and write functions. Internally gen-
erated and regulated voltages are provided for the
program and erase operations. A low V
CC
detector au-
tomatically inhibits write operations during power tran-
sitions. The end of program or erase is detected by the
RY/BY pin, Data Polling of DQ7, or by the Toggle Bit I
(DQ6).Once the end of a program or erase cycle has
been completed, the device automatically resets to the
readmode.
The Am29F016 also has a hardware RESET pin.
When this pin is driven low, execution of any Embed-
ded Program Algorithm or Embedded Erase Algorithm
will be terminated. The internal state machine will then
be reset into the read mode. The RESET pin may be
tied to the system reset circuitry. Therefore, if a system
reset occurs during the Embedded Program Algorithm
or Embedded Erase Algorithm, the device will be auto-
matically reset to the read mode. This will enable the
system’s microprocessor to read the boot-up firmware
from the Flash memory.
AMD’s Flash technology combines years of Flash
memory manufacturing experience to produce the
h i g h e s t l eve l s o f q u a l i t y, r e l i a b i l i t y a n d c o s t
effectiveness. The Am29F016 memory electrically
erases all bits within a sector simultaneously via
Fowler-Nordheim tunneling. The bytes are pro-
grammed one byte at a time using the EPROM pro-
gramming mechanism of hot electron injection.
Flexible Sector-Erase Architecture
s
Thirty two 64 Kbyte sectors
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Eight sector groups each of which consists of 4
adjacent sectors in the following pattern: sectors
0–3, 4
–
7, 8
–
11, 12
–
15, 16
–
19, 20
–
23, 24
–
27, and
28
–
31.
s
Individual-sector or multiple-sector erase capability
s
Sector group protection is user-definable
SA31
SA30
SA29
SA28
64 Kbyte
64 Kbyte
64 Kbyte
64 Kbyte
1FFFFFh
1EFFFFh
1DFFFFh
1CFFFFh
1BFFFFh
1AFFFFh
19FFFFh
18FFFFh
17FFFFh
16FFFFh
15FFFFh
14FFFFh
13FFFFh
12FFFFh
11FFFFh
10FFFFh
1FFFFFh
1EFFFFh
1DFFFFh
1CFFFFh
1BFFFFh
1AFFFFh
09FFFFh
08FFFFh
07FFFFh
06FFFFh
05FFFFh
04FFFFh
03FFFFh
02FFFFh
01FFFFh
00FFFFh
000000h
Sector
Group
7
32 Sectors Total
SA3
SA2
SA1
SA0
64 Kbyte
64 Kbyte
64 Kbyte
64 Kbyte
Sector
Group
0
18805D-1
2
Am29F016
微控制器 MCU
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