HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : Preliminary Data
Issued Date : 1993.05.15
Revised Date : 2001.02.14
Page No. : 1/3
HLB123T
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HLB123T is designed for high voltage. High speed switching inductive
circuits and amplifier applications.
Features
•
High Speed Switching
•
Low Saturation Voltage
•
High Reliability
Absolute Maximum Ratings
(Ta=25°C)
•
Maximum Temperatures
Storage Temperature ....................................................................................................... -50 ~ +150
°C
Junction Temperature ............................................................................................... +150
°C
Maximum
•
Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ............................................................................................... 3.5 W
Total Power Dissipation (Tc=25°C) ................................................................................................. 30 W
•
Maximum Voltages and Currents
BVCBO Collector to Base Voltage ................................................................................................ 600 V
BVCEO Collector to Emitter Voltage ............................................................................................. 400 V
BVEBO Emitter to Base Voltage ....................................................................................................... 8 V
IC Collector Current (DC).................................................................................................................. 1 A
IC Collector Current (Pulse) .............................................................................................................. 2 A
Characteristics
(Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)1
*VCE(sat)2
*VBE(sat)1
*VBE(sat)2
*hFE1
*hFE2
*hFE3
Min.
600
400
8
-
-
-
-
-
-
10
10
6
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
10
10
0.8
0.9
1.2
1.8
50
-
-
Unit
V
V
V
uA
uA
V
V
V
V
Test Conditions
IC=1mA, IE=0
IC=10mA, IB=0
IE=1mA, IC=0
VCB=600V, IE=0
VBE=9V, IC=0
IC=0.1A, IB=10mA
IC=0.3A, IB=30mA
IC=0.1A, IB=10mA
IC=0.3A, IB=30mA
IC=0.3A, VCE=5V
IC=0.5A, VCE=5V
IC=1A, VCE=5V
*Pulse Test : Pulse Width
≤380us,
Duty Cycle≤2%
Classification Of hFE1
Rank
Range
B1
10-17
B2
13-22
B3
18-27
B4
23-32
B5
28-37
B6
33-42
B7
38-47
B8
43-50
HLB123T
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Current Gain & Collector Current
100
1000
Spec. No. : Preliminary Data
Issued Date : 1993.05.15
Revised Date : 2001.02.14
Page No. : 2/3
Saturation Voltage & Collector Current
V
BE(sat)
@ I
C
=10I
B
Saturation Voltage (mV)
100
V
CE(sat)
@ I
C
=10I
B
hFE
hFE @ V
CE
=5V
10
10
1
10
100
1000
1
1
10
100
1000
Collector Current (mA)
Collector Current (mA)
On Voltage & Collector Current
1000
100
Capacitance & Reverse-Biased Voltage
V
BE(on)
@ V
CE
=5V
On Voltage (mV)
Capacitance (pF)
10
Cob
100
1
10
100
1000
1
0.1
1
10
100
Collector Current (mA)
Reverse-Biased Voltage (V)
Switching Time & Collector Current
10.0
V
CC
=100V, I
C
=5I
B1
=-5I
B2
Tstg
10000
Safe Operating Area
Collector Current (mA)
Switching Time (us)
1000
1.0
Tf
P
T
=1ms
100
P
T
=100ms
P
T
=1s
Ton
0.1
0.1
1.0
10
1
10
100
1000
Collector Current (A)
Forward Voltage (V)
HLB123T
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
TO-126 Dimension
D
A
B
1 2 3
G
C
I
E
J
K
M
Spec. No. : Preliminary Data
Issued Date : 1993.05.15
Revised Date : 2001.02.14
Page No. : 3/3
Marking :
α
3
α
4
HSMC Logo
Part Number
Date Code
Product Series
Rank
Ink Marking
Style : Pin 1.Emitter 2.Collector 3.Base
F
H
L
α
1
α
2
3-Lead TO-126 Plastic Package
HSMC Package Code : T
*:Typical
DIM
α1
α2
α3
α4
A
B
C
D
E
Inches
Min.
Max.
-
*3°
-
*3°
-
*3°
-
*3°
0.1500
0.1539
0.2752
0.2791
0.5315
0.6102
0.2854
0.3039
0.0374
0.0413
Millimeters
Min.
Max.
-
*3°
-
*3°
-
*3°
-
*3°
3.81
3.91
6.99
7.09
13.50
15.50
7.52
7.72
0.95
1.05
DIM
F
G
H
I
J
K
L
M
Inches
Min.
Max.
0.0280
0.0319
0.0480
0.0520
0.1709
0.1890
0.0950
0.1050
0.0450
0.0550
0.0450
0.0550
-
*0.0217
0.1378
0.1520
Millimeters
Min.
Max.
0.71
0.81
1.22
1.32
4.34
4.80
2.41
2.66
1.14
1.39
1.14
1.39
-
*0.55
3.50
3.86
Notes :
1.Dimension and tolerance based on our Spec. dated Mar. 6,1995.
2.Controlling dimension : millimeters.
3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
4.If there is any question with packing specification or packing method, please contact your local HSMC sales office.
Material :
•
Lead : 42 Alloy ; solder plating
•
Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0
Important Notice:
•
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
•
HSMC reserves the right to make changes to its products without notice.
•
HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
•
HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory :
•
Head Office
(Hi-Sincerity Microelectronics Corp.) : 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel : 886-2-25212056 Fax : 886-2-25632712, 25368454
•
Factory 1 :
No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel : 886-3-5983621~5 Fax : 886-3-5982931
•
Factory 2 :
No. 17-1, Ta-Tung Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel : 886-3-5977061 Fax : 886-3-5979220
HLB123T
HSMC Product Specification
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