VS-31DQ05, VS-31DQ05-M3, VS-31DQ06, VS-31DQ06-M3
www.vishay.com
Vishay Semiconductors
Schottky Rectifier, 3.3 A
FEATURES
• Low profile, axial leaded outline
• High frequency operation
Cathode
Anode
• Very low forward voltage drop
• High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
• Guard ring for enhanced ruggedness and
long term reliability
C-16
PRODUCT SUMMARY
Package
I
F(AV)
V
R
V
F
at I
F
I
RM
max.
T
J
max.
Diode variation
E
AS
DO-201AD (C-16)
3.3 A
50 V, 60 V
See Electrical table
15 mA at 125 °C
150 °C
Single die
5.0 mJ
• Compliant to RoHS Directive 2002/95/EC
• Designed and qualified for commercial level
• Halogen-free according to IEC 61249-2-21 definition
(-M3 only)
DESCRIPTION
The VS-31DQ... axial leaded Schottky rectifier has been
optimized for very low forward voltage drop, with moderate
leakage. Typical applications are in switching power
supplies, converters, freewheeling diodes, and reverse
battery protection
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
F(AV)
V
RRM
I
FSM
V
F
T
J
t
p
= 5 μs sine
3 Apk, T
J
= 25 °C
CHARACTERISTICS
Rectangular waveform
VALUES
3.3
50/60
340
0.62
- 40 to 150
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak
reverse voltage
SYMBOL
V
R
50
V
RWM
50
60
60
V
VS-31DQ05
VS-31DQ05-M3
VS-31DQ06
VS-31DQ06-M3
UNITS
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average forward current
See fig. 4
Maximum peak one cycle
non-repetitive surge current
See fig. 6
Non-repetitive avalanche energy
Repetitive avalanche current
SYMBOL
I
F(AV)
TEST CONDITIONS
50 % duty cycle at T
L
= 105 °C, rectangular waveform
5 µs sine or 3 µs rect. pulse
I
FSM
10 ms sine or 6 ms rect. pulse
E
AS
I
AR
T
J
= 25 °C, I
AS
= 1 A, L = 10 mH
Current decaying linearly to zero in 1 μs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
Following any rated load
condition and with rated
V
RRM
applied
VALUES
3.3
340
55
5.0
1.0
mJ
A
A
UNITS
Revision: 19-Sep-11
Document Number: 93320
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-31DQ05, VS-31DQ05-M3, VS-31DQ06, VS-31DQ06-M3
www.vishay.com
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
3A
Maximum forward voltage drop
See fig. 1
V
FM (1)
6A
3A
6A
Maximum reverse leakage current
See fig. 4
Typical junction capacitance
Typical series inductance
Maximum voltage rate of charge
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
I
RM (1)
C
T
L
S
dV/dt
T
J
= 25 °C
T
J
= 125 °C
TEST CONDITIONS
T
J
= 25 °C
T
J
= 125 °C
V
R
= Rated V
R
VALUES
0.62
0.78
0.54
0.65
2
15
160
9.0
10 000
mA
pF
nH
V/μs
V
UNITS
V
R
= 5 V
DC
(test signal range 100 kHz to 1 MHz) 25 °C
Measured lead to lead 5 mm from package body
Rated V
R
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage
temperature range
Maximum thermal resistance,
junction to ambient
Typical thermal resistance,
junction to lead
Approximate weight
SYMBOL
T
J
(1)
,
TEST CONDITIONS
VALUES
- 40 to 150
UNITS
°C
T
Stg
DC operation
Without cooling fin
DC operation
R
thJA
R
thJL
80
°C/W
15
1.2
0.042
g
oz.
31DQ05
31DQ06
Marking device
Note
(1)
Case style C-16
dP
tot
1
------------ < ------------- thermal runaway condition for a diode on its own heatsink
-
-
dT
J
R
thJA
Revision: 19-Sep-11
Document Number: 93320
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-31DQ05, VS-31DQ05-M3, VS-31DQ06, VS-31DQ06-M3
www.vishay.com
Vishay Semiconductors
150
I
F
- Instantaneous Forward Current (A)
10
Allowable Lead Temperature (°C)
130
DC
1
T
J
= 150 °C
T
J
= 125 °C
T
J
= 25 °C
110
90
Square
wave (D = 0.50)
80 % Rated V
R
applied
see
note (1)
0.1
0
0.2
0.4
0.6
0.8
1
93320_04
70
0
1
2
3
4
5
93320_01
V
FM
- Forward Voltage Drop (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
100
I
F(AV)
- Average Forward Current (A)
Fig. 4 - Maximum Allowable Lead Temperature vs.
Average Forward Current
3
I
R
- Reverse Current (mA)
10
Average Power Loss (W)
T
J
= 150 °C
2.5
2
1.5
1
0.5
0
1
T
J
= 125 °C
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
RMS Limit
DC
0.1
0.01
T
J
= 25 °C
0.001
0
93320_02
20
40
60
93320_05
0
1
2
3
4
5
V
R
- Reverse Voltage (V)
Average Forward Current - I
F(AV)
(A)
Fig. 5 - Forward Power Loss Characteristics
Fig. 2 - - Typical Values of Reverse Current vs.
Reverse Voltage
I
FSM
- Non-Repetitive Surge Current (A)
1000
1000
C
T
- Junction Capacitance (pF)
T = 25 °C
J
100
100
At Any Rated Load Condition
And With rated V
RRM
Applied
Following
Surge
10
0
93320_03
10
10
100
1000
10 000
40
80
120
160
V
R
- Reverse Voltage (V)
Fig. 3 - - Typical Junction Capacitance vs. Reverse Voltage
93320_06
t
p
- Square Wave Pulse Duration (µs)
Fig. 6 - Maximum Non-Repetitive Surge Current
(1)
Note
Formula used: T
C
= T
J
- (Pd + Pd
REV
) x R
thJC
;
Pd = Forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 6); Pd
REV
= Inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= 80 % rated V
R
Revision: 19-Sep-11
Document Number: 93320
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-31DQ05, VS-31DQ05-M3, VS-31DQ06, VS-31DQ06-M3
www.vishay.com
ORDERING INFORMATION TABLE
Vishay Semiconductors
Device code
VS-
1
31
2
D
3
Q
4
06
5
TR
6
-M3
7
1
2
3
4
5
6
7
-
-
-
-
-
-
-
Vishay Semiconductors product
31 = Current Rating, 3.3 A
D = DO-201 package
Q = Schottky Q.. series
06 = Voltage ratings
TR = Tape and reel package
None = Bulk package
Environmental digit
None = Lead (Pb)-free and RoHS compliant
-M3 = Halogen-free, RoHS compliant, and terminations lead (Pb)-free
05 = 50 V
06 = 60 V
ORDERING INFORMATION
(Example)
PREFERRED P/N
VS-31DQ05
VS-31DQ05TR
VS-31DQ05-M3
VS-31DQ05TR-M3
VS-31DQ06
VS-31DQ06TR
VS-31DQ06-M3
VS-31DQ06TR-M3
QUANTITY PER T/R
500
1200
500
1200
500
1200
500
1200
MINIMUM ORDER QUANTITY
500
1200
500
1200
500
1200
500
1200
LINKS TO RELATED DOCUMENTS
Dimensions
Part marking information
Packaging information
www.vishay.com/doc?95242
www.vishay.com/doc?95304
www.vishay.com/doc?95338
PACKAGING DESCRIPTION
Bulk
Tape and reel
Bulk
Tape and reel
Bulk
Tape and reel
Bulk
Tape and reel
Revision: 19-Sep-11
Document Number: 93320
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Outline Dimensions
www.vishay.com
Vishay Semiconductors
Axial DO-201AD (C-16)
DIMENSIONS
in millimeters (inches)
Ø 5.8 (0.23)
MAX.
Cathode band
21.0 (0.83) MIN.
(2 places)
21.0 (0.83) MIN.
(2 places)
10.0 (0.39)
MAX.
10.0 (0.39)
MAX.
2.54 (0.100) MAX.
Flash (2 places)
Ø 1.40 (0.055)
Ø 1.20 (0.047)
(2 places)
Ø 1.40 (0.055)
Ø 1.20 (0.047)
(2 places)
Ø 5.8 (0.23)
MAX.
Revision: 29-Aug-11
Document Number: 95242
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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