HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HI200202
Issued Date : 2002.06.01
Revised Date : 2002.06.10
Page No. : 1/4
HLB123I
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HLB123I is designed for high voltage. High speed switching inductive
circuits and amplifier applications.
Features
•
High Speed Switching
•
Low Saturation Voltage
•
High Reliability
TO-251
Absolute Maximum Ratings
(Ta=25°C)
•
Maximum Temperatures
Storage Temperature ........................................................................................................ -50 ~ +150
°C
Junction Temperature ................................................................................................ +150
°C
Maximum
•
Maximum Power Dissipation
Total Power Dissipation (Tc=25°C)................................................................................................. 20 W
•
Maximum Voltages and Currents
BVCBO Collector to Base Voltage ................................................................................................. 600 V
BVCEO Collector to Emitter Voltage .............................................................................................. 400 V
BVEBO Emitter to Base Voltage ....................................................................................................... 8 V
IC Collector Current (DC) .................................................................................................................. 1 A
IC Collector Current (Pulse) .............................................................................................................. 2 A
Electrical Characteristics
(Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)1
*VCE(sat)2
*VBE(sat)1
*VBE(sat)2
*hFE1
*hFE2
*hFE3
Ton
Tstg
Toff
Min.
600
400
8
-
-
-
-
-
-
10
10
6
-
-
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
0.4
2.4
0.3
Max.
-
-
-
10
10
0.8
0.9
1.2
1.8
50
-
-
1.1
4
0.7
Unit
V
V
V
uA
uA
V
V
V
V
Test Conditions
IC=1mA, IE=0
IC=10mA, IB=0
IE=1mA, IC=0
VCB=600V, IE=0
VBE=9V, IC=0
IC=0.1A, IB=10mA
IC=0.3A, IB=30mA
IC=0.1A, IB=10mA
IC=0.3A, IB=30Ma
IC=0.3A, VCE=5V
IC=0.5A, VCE=5V
IC=1A, VCE=5V
VCC=100V, IC=1A, IB1=IB2=0.2A
VCC=100V, IC=1A, IB1=IB2=0.2A
VCC=100V, IC=1A, IB1=IB2=0.2A
*Pulse Test: Pulse Width
≤380us,
Duty Cycle≤2%
uS
uS
uS
Classification Of hFE1
Rank
Range
B1
10-17
B2
13-22
B3
18-27
B4
23-32
B5
28-37
B6
33-42
B7
38-47
B8
43-50
HLB123I
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Current Gain & Collector Current
100
125 C
o
Spec. No. : HI200202
Issued Date : 2002.06.01
Revised Date : 2002.06.10
Page No. : 2/4
Saturation Voltage & Collector Current
10000
25 C
75 C
o
o
Saturation Voltage (mV)
1000
75 C
o
hFE
10
100
25 C
o
125 C
o
hFE @ V
CE
=5V
V
CE(sat)
@ I
C
=10I
B
10
1
1
10
100
1000
10000
1
10
100
1000
10000
Collector Current I
C
(mA)
Collector Current I
C
(mA)
Saturation Voltage & Collector Current
10000
On Voltage & Collector Current
1000
Saturation Voltage (mV)
V
BE(on)
@ V
CE
=5V
75 C
1000
25 C
o
o
125 C
V
BE(s at)
@ I
C
=10I
B
100
1
10
100
1000
10000
o
On Voltage (mV)
100
1
10
100
1000
Collector Current I
C
(mA)
Collector Current (mA)
Capacitance & Reverse-Biased Volatge
100
10.0
Switching Time & Collector Current
V
CC
=100V, I
C
=5I
B1
=-5I
B2
10
Cob
Switching Time (us)
Tstg
Capacitance (pF)
1.0
Tf
Ton
1
0.1
1
10
100
0.1
0.1
1.0
Reverse-Biased Voltage (V)
Collector Current (A)
HLB123I
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HI200202
Issued Date : 2002.06.01
Revised Date : 2002.06.10
Page No. : 3/4
PD - Tc
25
10
Safe Operating Area
PD(W) , Power Dissipation
20
Collector Current-I
C
(A)
PT=1ms
1
PT=1s
15
10
0.1
PT=100ms
5
0
0
50
100
0.01
Ambient Temperature-T
C
( C )
o
150
200
1
10
100
1000
Forward Voltage-V
CE
(V)
HLB123I
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
TO-251 Dimension
Marking:
Spec. No. : HI200202
Issued Date : 2002.06.01
Revised Date : 2002.06.10
Page No. : 4/4
A
B
C
D
L B
H
1 2 3 I
Date Code
Control Code
F
3
I
E
K
2
1
G
Style: Pin 1.Base 2.Collector 3.Emitter
H
J
3-Lead TO-251 Plastic Package
HSMC Package Code: I
*: Typical
DIM
A
B
C
D
E
F
Inches
Min.
Max.
0.0177 0.0217
0.0354 0.0591
0.0177 0.0236
0.0866 0.0945
0.2520 0.2677
0.2677 0.2835
Millimeters
Min.
Max.
0.45
0.55
0.90
1.50
0.45
0.60
2.20
2.40
6.40
6.80
6.80
7.20
DIM
G
H
I
J
K
Inches
Min.
Max.
0.2559
-
-
*
0.1811
-
0.0354
-
0.0315
0.2047 0.2165
Millimeters
Min.
Max.
6.50
-
-
*
4.60
-
0.90
-
0.80
5.20
5.50
Notes:
1.Dimension and tolerance based on our Spec. dated May. 24,1995.
2.Controlling dimension: millimeters.
3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
4.If there is any question with packing specification or packing method, please contact your local HSMC sales office.
Material:
•
Lead: 42 Alloy; solder plating
•
Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
•
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
•
HSMC reserves the right to make changes to its products without notice.
•
HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
•
HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
•
Head Office
(Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454
•
Factory 1:
No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel: 886-3-5983621~5 Fax: 886-3-5982931
HLB123I
HSMC Product Specification
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